Epitaxial films of Yttria Stabilized Zirconia(YSZ) were successfully grown on Si substrates by RF magnetron sputter, the atomic structure and the lattice mismatch of YSZ/Si were presented. Auger electron spectros...Epitaxial films of Yttria Stabilized Zirconia(YSZ) were successfully grown on Si substrates by RF magnetron sputter, the atomic structure and the lattice mismatch of YSZ/Si were presented. Auger electron spectroscopy, X ray diffraction and scanning展开更多
We reported the development of a Ф100 cm growth apparatus for skull melting growth of yttria-stabilized cubic zirconia(YSZ) crystals and more than 1000 kg crystals have been grown in the furnace each time.The growth ...We reported the development of a Ф100 cm growth apparatus for skull melting growth of yttria-stabilized cubic zirconia(YSZ) crystals and more than 1000 kg crystals have been grown in the furnace each time.The growth conditions were optimized and the structure of the as-grown crystals was characterized by X-ray diffraction.The transmittance of 15 mol.% yttria-stabilized cubic zirconia crystal was nearly 80% in the range of 400–1600 nm.The refractive indices were measured and fitted the Sellmeier equation whi...展开更多
钇稳定立方氧化锆(YSZ)晶体是重要的人工宝石材料,具有折射率高、色散强、硬度高、理化性能稳定等优点。由于YSZ熔点高达2715℃,通常采用冷坩埚法生长。单炉产量是其技术先进性的主要指标,也是降低生产成本的主要途径。为了提高产率,研...钇稳定立方氧化锆(YSZ)晶体是重要的人工宝石材料,具有折射率高、色散强、硬度高、理化性能稳定等优点。由于YSZ熔点高达2715℃,通常采用冷坩埚法生长。单炉产量是其技术先进性的主要指标,也是降低生产成本的主要途径。为了提高产率,研制出超大功率冷坩埚生长炉,其功率达到160 kW,直径达到1.5 m,成功生长出单炉5 t YSZ宝石晶体,这是迄今为止国内外报道的最高单炉产率。展开更多
文摘Epitaxial films of Yttria Stabilized Zirconia(YSZ) were successfully grown on Si substrates by RF magnetron sputter, the atomic structure and the lattice mismatch of YSZ/Si were presented. Auger electron spectroscopy, X ray diffraction and scanning
基金supported by the National Natural Science Foundation of China (50672111)Shanghai Science and Technology Committee (08520513100)
文摘We reported the development of a Ф100 cm growth apparatus for skull melting growth of yttria-stabilized cubic zirconia(YSZ) crystals and more than 1000 kg crystals have been grown in the furnace each time.The growth conditions were optimized and the structure of the as-grown crystals was characterized by X-ray diffraction.The transmittance of 15 mol.% yttria-stabilized cubic zirconia crystal was nearly 80% in the range of 400–1600 nm.The refractive indices were measured and fitted the Sellmeier equation whi...
文摘钇稳定立方氧化锆(YSZ)晶体是重要的人工宝石材料,具有折射率高、色散强、硬度高、理化性能稳定等优点。由于YSZ熔点高达2715℃,通常采用冷坩埚法生长。单炉产量是其技术先进性的主要指标,也是降低生产成本的主要途径。为了提高产率,研制出超大功率冷坩埚生长炉,其功率达到160 kW,直径达到1.5 m,成功生长出单炉5 t YSZ宝石晶体,这是迄今为止国内外报道的最高单炉产率。
文摘目的 通过关注纳米8YSZ粉末在不同温度下烧结过程中的晶粒长大行为及相结构组成变化,获得纳米8YSZ粉末的高温稳定性,防止高温烧结导致纳米8YSZ涂层性能明显衰减,致使涂层在正常服役过程中过早失效。方法 采用共沉淀工艺合成低杂质含量的8YSZ纳米粉末,经过低温煅烧预处理后,在900～1200℃温度区间进行3～12 h的烧结。通过X射线衍射仪和扫描电子显微镜对纳米颗粒进行物相结构和形貌分析,根据Scherrer公式计算热处理后的颗粒平均晶粒尺寸,采用Arrhenius公式得到晶粒生长活化能,进而确定晶粒的生长机制。结果 经过低温煅烧预处理后,粉末绝大多数仍然保持非晶态结构,经过高温热处理后,粉末均完成了晶态转化,相结构基本为单一四方相。温度为900～1100℃时,晶粒生长的活化能为42.638 k J/mol;温度为1100～1200℃时,晶粒生长的活化能为3.849 k J/mol。结论 高温热处理后,纳米8YSZ粉末物相结构为单一四方相,可以保持高温稳定性,防止涂层性能明显衰减。温度为900～1200℃时,晶粒生长机制以表面扩散为主的聚合生长。
