A polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa

A low hole injection efficiency for InGaN/GaN micro-light-emitting diodes(μLEDs) has become one of the main bottlenecks affecting the improvement of the external quantum efficiency(EQE) and the optical power. In this work, we propose and fabricate a polarization mismatched p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure for 445 nm GaN-based μLEDs with the size of 40 × 40 μm^(2), which serves as the hole injection layer. The polarization-induced electric field in the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure provides holes with more energy and can facilitate the non-equilibrium holes to transport into the active region for radiative recombination. Meanwhile, a secondary etched mesa for μLEDs is also designed, which can effectively keep the holes apart from the defected region of the mesa sidewalls, and the surface nonradiative recombination can be suppressed. Therefore, the proposed μLED with the secondary etched mesa and the p-GaN/p-Al_(0.25)Ga_(0.75)N/p-GaN structure has the enhanced EQE and the improved optical power density when compared with the μLED without such designs.

A review of the etched terminal structure of a 4H-SiC PiN diode

The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension(JTE)structures for power devices.However,achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon.Many previously reported studies adopted many new structures to solve this problem.Additionally,the JTE structure is strongly sensitive to the ion implantation dose.Thus,GA-JTE,double-zone etched JTE structures,and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage.They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes.This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad.Presently,the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.

Simple and Rapid Spectrophotometric Determination of Titanium on Etched Aluminum Foils

Introduction of titanium oxides with high permittivity on etched aluminum foils’ surface has been successfully utilized to increase specific capacitance of anode foils for aluminum electrolytic capacitors. In order to quantify the concentration of titanium (IV) on the etched aluminum foil precisely, a simple and rapid spectrophotometric procedure has been developed. After optimizing a series of variables including absorbance wavelength, concentration of nitric acid, concentration of hydrogen peroxide, nitration time and developing time, analytical precision and accuracy were tested by using standard working solution containing known amount of titanium (IV). The results showed that Lambert-Beer’s law was obeyed in the range of 0.01 to 3.00 mmol·L﹣1. The relative standard deviation (RSD) ranged from 0.67% to 1.09% (n = 6), and the recovery was between 99.17% - 100.03%. Investigation on effect of Al3+ ion indicated that there was no interference in the absorbance of titanium (IV) at 410 nm. The proposed procedure was applied to real samples for the determination of titanium (IV), and the results were in a good agreement with the values certified by inductively coupled plasma-atomic emission spectrometry (ICP-AES).

3-12 Investigation of Optical Properties of Cu/Ni Multilayer Nanowires Embedded in Etched Ion-track Template

Due to the increasing applications in optical devices electronics and nanosensors[1], 1D nanomaterials are becoming the extensive research area of physics, chemistry, medical, electronics and biology. As a member of 1D nanostructured materials, the multilayer nanowires exhibit special properties and have strong potential applications in the fields of optoelectronic devices and nanosensors [2].

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers.In this work,we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in 4H-SiC.In n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°,8°−15°and 2°−4°,respectively.In semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34°and 21°−24°,respectively.The inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrimination and statistic of dislocations in 4H-SiC.More significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and TSDs.This enables to distinguish TMDs from TSDs in 4H-SiC.

MICROSTRUCTURE AND COMPOSITION OF THE ELECTROLYTIC ETCHED PATTERN GRAINING SURFACE OF Al-Mg-Si ALLOY

After electrolytically etched pattern graining surface of aluminum alloy, it is shows that there are porous oxide film containing α Al 2O 3 and α Al 2O 3 by means of SEM XRD and XPS analysis. In the ditches, anodic oxidation makes pore density and diameter larger than other areas, and causes more coloring metal depositing and mutual cross linking. The electrolytically etched pattern surface shows relative deeper color on the ditches and lighter color on other areas, so it can be used for decoration. Electrolytic coloring metal exists in forms of Ag colloid and Ag 2O. Both anodic oxidation and electrolytic coloring affect the surface microstructure of aluminum alloy.

Study of Deep-etched Glass Waveguide Grating

Photoresist grating was fabricated by holography, and it was used in the mask of ion etching. The groovy depth of the etched glass grating was 1.6μm. The glass waveguide was formed by K^+/Na^+ ion exchanging. The laser beam of 633nm was coupled in the waveguide by a prism at one end, then, it passed through the grating and came out of the waveguide at other end. In the experiment, the Bragg diffraction with several orders was observed. The first order Bragg diffraction had the highest efficiency of 90 percent.

3-23 Impact of Etching Tempreture on Pore Shapes of Tracketched Membranes

Nanopores and nanochannels produced by etching heavy ion tracks are widely used in contemporary science and technology[1]. Conical and doubly-conical nanopores (channels) have attracted special interest in the past decade due to their potential in modern and rapidly growing fields, including molecular sensors, logic gates, nanoactuators, and other nanofluidic devices[2;3].

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 1010 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241Am.

A flat-topped etched diffraction grating demultiplexer with low polarization-dependent loss using a tapered MMI structure

A flat-topped etched diffraction grating (EDG) demultiplexer with a low polarization-dependent loss (PDL) is designed. A design and simulation method based on the method of moment (MoM) is proposed. A 65-channcl EDG demultiplexer with channel spacing of 100 GHz is considered as a design example. A tapered multi-mode interferometer (MMI) is used to flatten the passband of the EDG demultiplexer. The numerical results show that the exit width of the tapered waveguide impacts the loss of the TE case more than that of the TM case. Based on this fact, the exit width of the taper is optimized to obtain the lowest PDL. The tapering angle is also optimized where the minimal ripple is obtained. The designed EDG demultiplexer has an excellent flat-topped spectral response and a very low PDL.

High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension

This paper presents the design and fabrication of an etched implant junction termination extension（JTE）for high-voltage 4H-SiC PiN diodes. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. The simulation results show that the etched implant JTE method can improve the blocking voltage of SiC PiN diodes and also provides broad process latitude for parameter variations, such as implantation dose and activation annealing condition. The fabricated SiC PiN diodes with the etched implant JTE exhibit a highest blocking voltage of 4.5 kV and the forward on-state voltage of 4.6 V at room temperature. These results are of interest for understanding the etched implant method in the fabrication of high-voltage power devices.

The etching strategy of zinc anode to enable high performance zinc-ion batteries

Zinc-ion batteries(ZIBs)are considered to be one of the most promising candidates to replace lithium-ion batteries(LIBs)due to the high theoretical capacity,low cost and intrinsic safety.However,zinc dendrites,hydrogen evolution reaction,surface passivation and other side reactions will inevitably occur during the charging and discharging process of Zn anode,which will seriously affect the cycle stability of the battery and hinder its practical application.The etching strategy of Zn anode has attracted wide attention because of its simple operation and broad commercial prospects,and the etched Zn anode can effectively improve its electrochemical performance.However,there is no comprehensive review of the etching strategy of Zn anode.This review first summarizes the challenges faced by Zn anode,then puts forward the etching mechanisms and properties of acid,salt and other etchants.Finally,based on the above discussion,the challenges and opportunities of Zn anode etching strategy are proposed.

Steering surface reconstruction of hybrid metal oxides for efficient oxygen evolution reaction in water splitting and zinc-air batteries

Surface reconstruction yields real active species in electrochemical oxygen evolution reaction(OER)conditions;however,rationally regulating reconstruction in a targeted manner for constructing highly active OER electrocatalysts remains a formidable challenge.Here,an electrochemical activation strategy with selective etching was utilized to guide the reconstruction process of a hybrid cobalt-molybdenum oxide(CoMoO_(4)/Co_(3)O_(4)@CC)in a favorable direction to improve the OER performance.Both in-situ Raman and multiple ex-situ characterization tools demonstrate that controlled surface reconstruction can be easily achieved through Mo etching,with the formation of a dynamically stable amorphous-crystalline heterostructure.Theoretical calculations together with experimental results reveal that the synergistic effects between amorphous CoOOH and crystalline Co_(3)O_(4) are crucial in enhancing the catalytic performance.Consequently,the reconstructed CoMoO_(4)/Co_(3)O_(4)@CC exhibits a low overpotential of 250 mV to achieve a current density of 10 mA cm^(-2) in 1 M KOH,and more importantly it can be practiced in electrolytic water splitting and rechargeable zinc-air batteries devices,achieving ultra-long stability for over 500 and 1200 h,respectively.This work provides a promising route for the construction of high-performance electrocatalysts.

Maskless fabrication of quasi-omnidirectional V-groove solar cells using an alkaline solution-based method

Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.

Multiple-dimensioned defect engineering for graphite felt electrode of vanadium redox flow battery

The scarcity of wettability,insufficient active sites,and low surface area of graphite felt(GF)have long been suppressing the performance of vanadium redox flow batteries(VRFBs).Herein,an ultra-homogeneous multipledimensioned defect,including nano-scale etching and atomic-scale N,O codoping,was used to modify GF by the molten salt system.NH_(4)Cl and KClO_(3) were added simultaneously to the system to obtain porous N/O co-doped electrode(GF/ON),where KClO_(3) was used to ultra-homogeneously etch,and O-functionalize electrode,and NH4Cl was used as N dopant,respectively.GF/ON presents better electrochemical catalysis for VO_(2)+/VO_(2)+ and V3+/V2+ reactions than only O-functionalized electrodes(GF/O)and GF.The enhanced electrochemical properties are attributed to an increase in active sites,surface area,and wettability,as well as the synergistic effect of N and O,which is also supported by the density functional theory calculations.Further,the cell using GF/ON shows higher discharge capacity,energy efficiency,and stability for cycling performance than the pristine cell at 140 mA cm^(−2) for 200 cycles.Moreover,the energy efficiency of the modified cell is increased by 9.7% from 55.2% for the pristine cell at 260 mA cm^(−2).Such an ultra-homogeneous etching with N and O co-doping through“boiling”molten salt medium provides an effective and practical application potential way to prepare superior electrodes for VRFB.

Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights

Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide(4H-SiC),which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals.However,the etching mechanism of 4H-SiC is limited misunderstood.In this letter,we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching,X-ray photoelectron spectroscopy(XPS)and first-principles investigations.The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol,respectively.The molten-KOH etching rate of the C face is higher than the Si face.Combining XPS analysis and first-principles calculations,we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten KOH.The faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable,and easier to be removed with molten alkali,rather than the C face being easier to be oxidized.

Construct a 3D microsphere of HMX/B/Al/PTFE to obtain the high energy and combustion reactivity

Metal(aluminum and boron)based energetic materials have been wildly applied in various fields including aerospace,explosives and micro-devices due to their high energy density.Unfortunately,the low combustion efficiency and reactivity of metal fuels,especially boron(B),severely limit their practical applications.Herein,multi-component 3D microspheres of HMX/B/Al/PTFE(HBA)have been designed and successfully prepared by emulsion and solvent evaporation method to achieve superior energy and combustion reactivity.The reactivity and energy output of HBA are systematically measured by ignitionburning test,constant-volume explosion vessel system and bomb calorimetry.Due to the increased interfacial contact and reaction area,HBA shows higher flame propagation rate,faster pressurization rate and larger combustion heat of 29.95 cm/s,1077 kPa/s,and 6164.43 J/g,which is 1.5 times,3.5 times,and 1.03 times of the physical mixed counterpart(HBA-P).Meanwhile,HBA also shows enhanced energy output and reactivity than 3D microspheres of HMX/B/PTFE(HB)resulting from the high reactivity of Al.The reaction mechanism of 3D microspheres is comprehensively investigated through combustion emission spectral and thermal analysis(TG-DSC-MS).The superior reactivity and energy of HBA originate from the surface etching of fluorine to the inert shell(Al_(2)O_(3) and B_(2)O_(3))and the initiation effect of Al to B.This work offers a promising approach to design and prepare high-performance energetic materials for the practical applications.

1.3-μm 1×4 MMI coupler based on shallow-etched InP ridge waveguides

1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB.

Air-Steam Etched Construction of Hierarchically Porous Metal-Organic Frameworks

The introduction of mesoporosity into the microporous metal-organic frameworks(MOFs)is expected to expand their applications.Herein,we report a green and facile method to obtain hierarchically porous MOF structures by using an air-steam etching process.By virtue of the protonation reaction between the imidazole moiety and water vapor,the protonated imidazole related linkers leave the framework,resulting in the formation of mesopores in the zeolitic imidazolate frameworks(ZIFs),as exemplified by ZIF-8.Given the mild etching process,the materials'structural integrity and crystallinity are well maintained.Accordingly,the hierarchical porous ZIF-8 exhibited enhanced performance in the dye removal as well as CO_(2) cycloaddition reaction with epichlorohydrin in comparison with microporous ZIF-8,owing to the accelerated mass transfer arising from mesoporous structures.Remarkably,the proposed steam etching approach is generally applicable,which can be readily extended to other ZIFs,such as ZIF-14,ZIF-69,and ZIF-71,thus representing a powerful strategy to construct hierarchically porous MOF materials.

Orientation degree characterization of diamond etched with Ce-7%Fe alloy

An increasing {110} orientation degree behavior was observed during etching of chemical vapor deposition （CVD） diamond films by partially melting Ce-7%Fe alloys. In order to accurately investigate this phenomenon, the X-ray diffraction method was used to identify the changes in the surface crystal orientation of the diamond films etched by Ce-7%Fe alloys, and evolution of orientation along the growth direction of the un-etched diamond film was analyzed by electron backscattering diffraction （EBSD）, and then the morphology of etched diamond surface was observed by scanning electron microscopy （SEM）. The results showed that the {110 } orientation degree of diamond surface increased due to the anisotropy in diamond etching with Ce-7%Fe, which was verified by the etching ＂pit＂ in SEM micrographs.