Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. T...Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. These two factors are studied in this paper. The experimental results show that the higher selectivity can be gotten when F - gas is used as etching gas and Al is introduced as mask layer. The lateral etching problems can be solved by adjusting the etching condition, such as increasing the RF power, changing the gas composition and flow volume of etching machine.展开更多
Rare-earth ion doped crystals for hybrid quantum technologies are an area of growing interest in the solid-state physics community. We have earlier theoretically proposed a hybrid scheme of a mechanical resonator whic...Rare-earth ion doped crystals for hybrid quantum technologies are an area of growing interest in the solid-state physics community. We have earlier theoretically proposed a hybrid scheme of a mechanical resonator which is fabricated out of a rare-earth doped mono-crystalline structure. The rare-earth ion dopants have absorption energies which are sensitive to crystal strain, and it is thus possible to couple the ions to the bending motion of the crystal cantilever. This type of resonator can be useful for either investigating the laws of quantum physics with material objects or for applications such as sensitive force-sensors. Here, we present the design and fabrication method based on focused-ion-beam etching techniques which we have successfully employed in order to create such microscale resonators, as well as the design of the environment which will allow studying the quantum behavior of the resonators.展开更多
To indirectly investigate the dislocation behavior of Fe-36wt%Ni Invar alloy by the etch pit method, polished Invar specimens were etched by a solution containing 4 g copper sulfate, 20 mL hydrochloric acid, and 20 mL...To indirectly investigate the dislocation behavior of Fe-36wt%Ni Invar alloy by the etch pit method, polished Invar specimens were etched by a solution containing 4 g copper sulfate, 20 mL hydrochloric acid, and 20 mL deionized water for 2 min. Etch pits in the etched surfaces were observed. All the etch pits in one specific grain exhibited similar shapes, which are closely related to the grain orienta-tions. These etch pits were characterized as dislocation etch pits. It was observed that etch pits arranged along grain boundaries, gathered at grain tips and strip-like etch pit clusters passed through a number of grains in the pure Invar specimens. After the addition of a small amount of alloying elements, the identification of a single dislocation etch pit is challenging compared with the pure Invar alloy. Thus, the observation of etch pits facilitates the investigation on the dislocation behavior of the pure Invar alloy. In addition, alloying elements may affect the densities and sizes of etch pits.展开更多
WHEN scanning electrochemical microscopy (SECM) with feedback mode is used to etchcertain surface, the etchant molecules generated at a microelectrode diffuse to the surface andreact therein with the surface species, ...WHEN scanning electrochemical microscopy (SECM) with feedback mode is used to etchcertain surface, the etchant molecules generated at a microelectrode diffuse to the surface andreact therein with the surface species, resulting in local etching pattern. It is noted that theetching resolution of SECM is dominantly determined by the size of the microelectrode.However, many experimental results have shown the significant influence of the lateral diffu-sion of etchant on the etching resolution. Therefore, a thin diffusion layer of the展开更多
文摘Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. These two factors are studied in this paper. The experimental results show that the higher selectivity can be gotten when F - gas is used as etching gas and Al is introduced as mask layer. The lateral etching problems can be solved by adjusting the etching condition, such as increasing the RF power, changing the gas composition and flow volume of etching machine.
基金YLC acknowledges support from the Ville de Paris Emergence Program and from the LABEX Cluster of Excellence FIRST-TF(ANR-10-LABX-48-01),within the Program“investissements d'Avenir”operated by the French National Research Agency(ANR)The project has also received funding from the European Union’Horizon 2020 research and innovation program under grant agreement No 712721(NanOQTech).
文摘Rare-earth ion doped crystals for hybrid quantum technologies are an area of growing interest in the solid-state physics community. We have earlier theoretically proposed a hybrid scheme of a mechanical resonator which is fabricated out of a rare-earth doped mono-crystalline structure. The rare-earth ion dopants have absorption energies which are sensitive to crystal strain, and it is thus possible to couple the ions to the bending motion of the crystal cantilever. This type of resonator can be useful for either investigating the laws of quantum physics with material objects or for applications such as sensitive force-sensors. Here, we present the design and fabrication method based on focused-ion-beam etching techniques which we have successfully employed in order to create such microscale resonators, as well as the design of the environment which will allow studying the quantum behavior of the resonators.
文摘To indirectly investigate the dislocation behavior of Fe-36wt%Ni Invar alloy by the etch pit method, polished Invar specimens were etched by a solution containing 4 g copper sulfate, 20 mL hydrochloric acid, and 20 mL deionized water for 2 min. Etch pits in the etched surfaces were observed. All the etch pits in one specific grain exhibited similar shapes, which are closely related to the grain orienta-tions. These etch pits were characterized as dislocation etch pits. It was observed that etch pits arranged along grain boundaries, gathered at grain tips and strip-like etch pit clusters passed through a number of grains in the pure Invar specimens. After the addition of a small amount of alloying elements, the identification of a single dislocation etch pit is challenging compared with the pure Invar alloy. Thus, the observation of etch pits facilitates the investigation on the dislocation behavior of the pure Invar alloy. In addition, alloying elements may affect the densities and sizes of etch pits.
文摘WHEN scanning electrochemical microscopy (SECM) with feedback mode is used to etchcertain surface, the etchant molecules generated at a microelectrode diffuse to the surface andreact therein with the surface species, resulting in local etching pattern. It is noted that theetching resolution of SECM is dominantly determined by the size of the microelectrode.However, many experimental results have shown the significant influence of the lateral diffu-sion of etchant on the etching resolution. Therefore, a thin diffusion layer of the
