In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environme...In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulations, this paper presents a new kind of SEUR triggered by the charge collection of the Off-PMOS and the delayed charge collection of the On-NMOS in commercial 40-nm 6 T SRAM cells. The simulation results show that the proposed SEUR can not occur at normal incidence,but can present easily at angular incidence. It is also found that the width of SET induced by this SEUR remains the same after linear energy transfer(LET) increases to a certain value. In addition, through analyzing the effect of the spacing, the adjacent transistors, the drain area, and some other dependent parameters on this new kind of SEUR, some methods are proposed to strengthen the recovery ability of SRAM cells.展开更多
In order to study whether the random events set can be used in Rudongbank of Nantong or not, we use ADCIRC model to stimulate the storm surge affectingRudong bank based on random events set. Then we use p-III curve to...In order to study whether the random events set can be used in Rudongbank of Nantong or not, we use ADCIRC model to stimulate the storm surge affectingRudong bank based on random events set. Then we use p-III curve to fit peak-value ofsurge of all the years to get the surge of typical return periods. The result shows that theresults of fitting by ADCIRC and by historical data coincide well in lower return periods,but to higher return periods, the results of fitting by ADCIRC are significantly higher thanthat of fitting by historical data. Due to the short time, it’s not enough for the extremestorm surge events to occur, the results of higher return periods are not reliable, so wecan’t rule out the reasonability of results based on random events set. The results offitting based on random events set are accurate in lower return periods and we can alsofully estimate the surge of higher return periods based on random events set. In thesituation of lacking historical data of hundreds of years, random events set can beaccepted as a tool to compute the return period of storm surge. Consideration of globalwarming, the possibility of super typhoons’ appearance will rise, which will result inhigher surge of return periods. In order to prevent the disaster of storm surge, thegovernment needs to deepen and reinforce the coastal engineering like seawalls and embankments.展开更多
The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear e...The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.展开更多
为了处理系统验证中大量存在的不确定性,国内学者将可能性理论引入到模型检测中,提出了广义可能性Kriple结构。广义可能性Kriple结构有着较好的应用前景,但有许多问题需要解决。其中的一个问题是,如何高效便捷地建立广义可能性Kriple结...为了处理系统验证中大量存在的不确定性,国内学者将可能性理论引入到模型检测中,提出了广义可能性Kriple结构。广义可能性Kriple结构有着较好的应用前景,但有许多问题需要解决。其中的一个问题是,如何高效便捷地建立广义可能性Kriple结构的数学模型。为了给广义可能性Kriple结构中的模糊事件提供一种便捷方便的建模方法,在建模的过程中引入具有三种否定的广义模糊集(Generalized Fuzzy Sets with Contradictory,Opposite and Medium negation,GFScom),给出了广义可能性Kriple结构中的模糊事件的建模方法。应用实例表明所提方法是有效、可行的。展开更多
A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector lo...A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.展开更多
基金Supported by National Natural Science Foundation of China(Nos.61176030 and 61373032)Specialized Research Fund for the Doctor Program of Higher Education of China(No.20124307110016)
文摘In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulations, this paper presents a new kind of SEUR triggered by the charge collection of the Off-PMOS and the delayed charge collection of the On-NMOS in commercial 40-nm 6 T SRAM cells. The simulation results show that the proposed SEUR can not occur at normal incidence,but can present easily at angular incidence. It is also found that the width of SET induced by this SEUR remains the same after linear energy transfer(LET) increases to a certain value. In addition, through analyzing the effect of the spacing, the adjacent transistors, the drain area, and some other dependent parameters on this new kind of SEUR, some methods are proposed to strengthen the recovery ability of SRAM cells.
文摘In order to study whether the random events set can be used in Rudongbank of Nantong or not, we use ADCIRC model to stimulate the storm surge affectingRudong bank based on random events set. Then we use p-III curve to fit peak-value ofsurge of all the years to get the surge of typical return periods. The result shows that theresults of fitting by ADCIRC and by historical data coincide well in lower return periods,but to higher return periods, the results of fitting by ADCIRC are significantly higher thanthat of fitting by historical data. Due to the short time, it’s not enough for the extremestorm surge events to occur, the results of higher return periods are not reliable, so wecan’t rule out the reasonability of results based on random events set. The results offitting based on random events set are accurate in lower return periods and we can alsofully estimate the surge of higher return periods based on random events set. In thesituation of lacking historical data of hundreds of years, random events set can beaccepted as a tool to compute the return period of storm surge. Consideration of globalwarming, the possibility of super typhoons’ appearance will rise, which will result inhigher surge of return periods. In order to prevent the disaster of storm surge, thegovernment needs to deepen and reinforce the coastal engineering like seawalls and embankments.
基金Project supported in part by the National Natural Science Foundation of China(Grant No.61974056)the Natural Science Foundation of Shanghai(Grant No.19ZR1471300)+1 种基金Shanghai Science and Technology Innovation Action Plan(Grant No.19511131900)Shanghai Science and Technology Explorer Plan(Grant No.21TS1401700)。
文摘The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.
文摘为了处理系统验证中大量存在的不确定性,国内学者将可能性理论引入到模型检测中,提出了广义可能性Kriple结构。广义可能性Kriple结构有着较好的应用前景,但有许多问题需要解决。其中的一个问题是,如何高效便捷地建立广义可能性Kriple结构的数学模型。为了给广义可能性Kriple结构中的模糊事件提供一种便捷方便的建模方法,在建模的过程中引入具有三种否定的广义模糊集(Generalized Fuzzy Sets with Contradictory,Opposite and Medium negation,GFScom),给出了广义可能性Kriple结构中的模糊事件的建模方法。应用实例表明所提方法是有效、可行的。
基金Project supported by the National Natural Science Foundation of China (Grant No. 60976013)
文摘A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.
