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Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce^(3+)-Yb^(3+)
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作者 Talib Hussain 叶慧琪 肖东 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第5期140-143,共4页
Ce3+-Yb3+ doped Y3Al5O12 (YAG) is a luminescent down-conversion material which could convert visible pho- tons to near infrared photons. In this work, YAG:Ce3+-Yb3+ is applied on the front surface of mass-produ... Ce3+-Yb3+ doped Y3Al5O12 (YAG) is a luminescent down-conversion material which could convert visible pho- tons to near infrared photons. In this work, YAG:Ce3+-Yb3+ is applied on the front surface of mass-produced mono crystalline Si solar cells. For the coated cells, the external quantum efficiencv from the visible to the near infrared is improved, and the energy conversion efficiency enhances from 11.70% to 12.2% under AMI.SG. Furthermore, the phosphor down-conversion effect on the solar cell is characterized by the microwave detected photoconductivity technique on the n-type silicon wafer under the 977nm excitation. The down-conversion materials improve the average excess carrier lifetime from 22.5μs to 24.2#s and the average surface recombi- nation velocity reduces from 424.Scm/s to 371.6cm/s, which reveal the significant reduction in excess carrier recombination by the phosphors. 展开更多
关键词 by on YB excess carrier lifetime Improvement in c-Si Solar Cells by YAG:Ce Si YAG of in is down
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