Silicon photomultipliers （SiPMs） are a new generation of semiconductor-based photon counting devices with the merits of low weight, low power consumption and low voltage operation, promising to meet the needs of spa...Silicon photomultipliers （SiPMs） are a new generation of semiconductor-based photon counting devices with the merits of low weight, low power consumption and low voltage operation, promising to meet the needs of space particle physics experiments. In this paper, comparative studies of SiPMs and traditional vacuum photomultiplier tubes （PMTs） have been performed regarding the basic properties of dark currents, dark counts and excess noise factors. The intrinsic optical erosstalk effect of SiPMs was evaluated.展开更多
This paper presents a circuit model for thin avalanche photodiodes （APDs）. In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries...This paper presents a circuit model for thin avalanche photodiodes （APDs）. In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries to take the effects of carrier＇s position dependent properties, like carder＇s dead length and the history of carder＇s previous ionization into account by developing an effective electric field in the multiplication region. The output photocurrent and multiplication gain obtained from the proposed model for different lengths of the multi- plication region achieve a good agreement in comparison with available experimental data. In addition, calculated excess noise factor reveals the model ability for noise and sensitivity analysis.展开更多
基金Supported by National High Technology Research and Development Program of China (2007AA12Z133)
文摘Silicon photomultipliers （SiPMs） are a new generation of semiconductor-based photon counting devices with the merits of low weight, low power consumption and low voltage operation, promising to meet the needs of space particle physics experiments. In this paper, comparative studies of SiPMs and traditional vacuum photomultiplier tubes （PMTs） have been performed regarding the basic properties of dark currents, dark counts and excess noise factors. The intrinsic optical erosstalk effect of SiPMs was evaluated.
文摘This paper presents a circuit model for thin avalanche photodiodes （APDs）. In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries to take the effects of carrier＇s position dependent properties, like carder＇s dead length and the history of carder＇s previous ionization into account by developing an effective electric field in the multiplication region. The output photocurrent and multiplication gain obtained from the proposed model for different lengths of the multi- plication region achieve a good agreement in comparison with available experimental data. In addition, calculated excess noise factor reveals the model ability for noise and sensitivity analysis.
