Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications.Here we study the evolution of insulating ground states of Ta_(2)Pu_(3)Te_(5) a...Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications.Here we study the evolution of insulating ground states of Ta_(2)Pu_(3)Te_(5) and Ta_(2)Ni_(3)Te_(5) under in-situ surface potassium deposition via angle-resolved photoemission spectroscopy.Our results confirm the excitonic insulator character of Ta_(2)d_(3)Te_(5).Upon surface doping,the size of its global gap decreases obviously.After a deposition time of more than 7 min,the potassium atoms induce a metal-insulator phase transition and make the system recover to a normal state.In contrast,our results show that the isostructural compound Ta_(2)Ni_(3)Te_(5) is a conventional insulator.The size of its global gap decreases upon surface doping,but persists positive throughout the doping process.Our results not only confirm the excitonic origin of the band gap in Ta_(2)Pd_(3)Te_(5),but also offer an effective method for designing functional quantum devices in the future.展开更多
基金Project supported by the Ministry of Science and Technology of China (Grant No. 2022YFA1403800)the National Natural Science Foundation of China (Grant Nos. U2032204,12188101, and U22A6005)+2 种基金the Chinese Academy of Sciences (Grant No. XDB33000000)the Synergetic Extreme Condition User Facility (SECUF)the Center for Materials Genome。
文摘Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications.Here we study the evolution of insulating ground states of Ta_(2)Pu_(3)Te_(5) and Ta_(2)Ni_(3)Te_(5) under in-situ surface potassium deposition via angle-resolved photoemission spectroscopy.Our results confirm the excitonic insulator character of Ta_(2)d_(3)Te_(5).Upon surface doping,the size of its global gap decreases obviously.After a deposition time of more than 7 min,the potassium atoms induce a metal-insulator phase transition and make the system recover to a normal state.In contrast,our results show that the isostructural compound Ta_(2)Ni_(3)Te_(5) is a conventional insulator.The size of its global gap decreases upon surface doping,but persists positive throughout the doping process.Our results not only confirm the excitonic origin of the band gap in Ta_(2)Pd_(3)Te_(5),but also offer an effective method for designing functional quantum devices in the future.
