We report on the high-field magnetotransport of KTaO_(3)single crystals,which are a promising candidate for study in the extreme quantum limit.By photocarrier doping with 360 nm light,we observe a significant positive...We report on the high-field magnetotransport of KTaO_(3)single crystals,which are a promising candidate for study in the extreme quantum limit.By photocarrier doping with 360 nm light,we observe a significant positive,non-saturating,and linear magnetoresistance at low temperatures accompanied by a decreasing Hall coefficient.When cooling down to 10 K,the magnetoresistance value of KTaO_(3)(100)reaches~433%at a magnetic field of 12 T.Such behavior can be attributed to all the electrons occupying only the lowest Landau level in the extreme quantum limit.Light inhomogeneity may also contribute to large linear magnetoresistance.These results provide insights into novel magnetic devices based on complex materials and add a new family of materials with positive magnetoresistance.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51572222)Key Research Project of the Natural Science Foundation of Shaanxi Province,China(Grant Nos.2021JZ-08 and 2020JM-088)+1 种基金the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2021JM-041)the Fundamental Research Funds for the Central Universities(Grant Nos.3102017OQD074 and 310201911cx044)
文摘We report on the high-field magnetotransport of KTaO_(3)single crystals,which are a promising candidate for study in the extreme quantum limit.By photocarrier doping with 360 nm light,we observe a significant positive,non-saturating,and linear magnetoresistance at low temperatures accompanied by a decreasing Hall coefficient.When cooling down to 10 K,the magnetoresistance value of KTaO_(3)(100)reaches~433%at a magnetic field of 12 T.Such behavior can be attributed to all the electrons occupying only the lowest Landau level in the extreme quantum limit.Light inhomogeneity may also contribute to large linear magnetoresistance.These results provide insights into novel magnetic devices based on complex materials and add a new family of materials with positive magnetoresistance.
