Mass-producible low-cost flexible electronic fabrics for azo dye wastewater treatment by electrocoagulation

Electrocoagulation is progressively becoming an ecologically friendly water treatment method owing to its lack of secondary pollution,high active ingredient concentration,high treatment effectiveness,simple equipment,and simplicity of automated control implementation.Herein,electrocoagulation is offered as a method for treating wastewater containing azo dyes using a revolutionary flexible electronic fabric that can be mass-producible at a reasonable price.A computer-controlled machine embroiders 316L stainless steel fiber(316L SSF)onto an insulating fabric to manufacture a flexible electronic device of cathode and anode with a monopolar arrangement on the fabric surface.Using methyl orange(MO)solution to simulate azo dye wastewater,the decolorization rate of 500 ml MO reached 99.25% under the conditions of 50 mg·L^(-1)initial mass concentration,120 min electrolysis time,15 mA·g^(-1)current density,1 cm electrode spacing,0.1 mol·L^(-1)NaCl,pH 7.6,200 r·min^(-1)rotational speed of the stirrer,and 22-25℃ room temperature.In addition,it is feasible to embroider flexible electronic fabrics with varied sizes and numbers of electrodes based on the amount of treated sewage to increase the degradation rate,which has significant practical application value.

Generation and Suppression of Pendant Droplet Oscillation in Electron Beam Directed Energy Deposition

Electron beam–directed energy deposition(EB–DED)has emerged as a promising wire-based metal additive manufacturing technique.However,the effects of EBs on pendant droplets at wire tips have not yet been determined.The aim of this study is to enhance the understanding of this action by analyzing the mechanism of droplet oscillation.The pendant droplet oscillation phenomenon hinders the stable transfer of droplets to the molten pool and limits the feasibility of manufacturing complex lattice structures by EB–DED.Hence,another aim of this study is to create an oscillation suppression method.An escalating asymmetric amplitude is the main characteristic of droplet oscillation.The primary oscillationinducing force is the recoil force generated from the EB-acted local surface of the droplet.The physical mechanism of this force is the rapid increase and uneven distribution of the local surface temperature caused by the partial action of the EB.The prerequisites for droplet oscillation include vacuum conditions,high power densities,and bypass wire feeding processes.The proposed EB–dynamic surrounding melting(DSM)method can be applied to conveniently and effectively suppress oscillations,enable the accurate transfer of droplets to the molten pool,and achieve stable processes for preparing the strut elements of lattice structures.Lowering the temperature and improving the uniformity of its distribution are the mechanisms of oscillation suppression in EB–DSM.In this study,the physical basis for interpreting the mechanism by which EBs act on droplets and the technical basis for using EB–DED to prepare complex lattice structure parts are provided.

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

Fabrication techniques and applications of flexible graphene-based electronic devices

In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future.