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Design of a novel static-triggered power-rail ESD clamp circuit in a 65-nm CMOS process
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作者 Guangyi LU Yuan WANG +2 位作者 Lizhong ZHANG Jian CAO Xing ZHANG 《Science China Earth Sciences》 SCIE EI CAS CSCD 2016年第12期166-174,共9页
This work presents the design of a novel static-triggered power-rail electrostatic discharge(ESD)clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is fir... This work presents the design of a novel static-triggered power-rail electrostatic discharge(ESD)clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is firstly discussed. Based on the discussion, a novel power-rail ESD clamp circuit utilizing the static ESD detection mechanism is proposed. By skillfully incorporating a thyristor delay stage into the trigger circuit(TC), the proposed circuit achieves the best ESD-conduction behavior while consuming the lowest leakage current(Ileak) at the normal bias voltage among all investigated circuits in this work. In addition, the proposed circuit achieves an excellent false-triggering immunity against fast power-up pulses. All investigated circuits are fabricated in a 65-nm CMOS process. Performance superiorities of the proposed circuit are fully verified by both simulation and test results. Moreover, the proposed circuit offers an efficient on-chip ESD protection scheme considering the worst discharge case in the utilized process. 展开更多
关键词 electrostatic discharge (ESD) power-rail ESD clamp circuit detection mechanism transient-noise immunity false triggering transmission line pulsing (TLP) test
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A novel high performance ESD power clamp circuit with a small area
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作者 杨兆年 刘红侠 +1 位作者 李立 卓青青 《Journal of Semiconductors》 EI CAS CSCD 2012年第9期124-130,共7页
A MOSFET-based electrostatic discharge (ESD) power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. ... A MOSFET-based electrostatic discharge (ESD) power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. The special structure overcomes other shortcomings in this clamp circuit. Under fast power-up events, the gate voltage of the clamp MOSFET does not rise as quickly as under ESD events, the special structure can keep the clamp MOSFET thoroughly off. Under a falsely triggered event, the special structure can turn off the clamp MOSFET in a short time. The clamp circuit can also reject the power supply noise effectively. Simulation results show that the clamp circuit avoids fast false triggering events such as a 30 ns/1.8 V power-up, maintains a 1.2 μs delay time and a 2.14 μs turn-off time, and reduces to about 70% of the RC time constant. It is believed that the proposed clamp circuit can be widely used in high-speed integrated circuits. 展开更多
关键词 electrostatic discharge clamp circuit false triggering turn-off mechanism
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