Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method

Thermal conductivity is an important material parameter of silicon when studying the performance and reliability of devices or for guiding circuit design when considering heat dissipation, especially when the self-heating effect becomes prominent in ultra-scaled MOSFETs.The cross-plane thermal conductivity of a thin silicon film is lacking due to the difficulty in sensing high thermal conductivity in the vertical direction.In this paper, a feasible method that utilizes an ultra-fast electrical pulse within 20 μs combined with the hot strip technique is adopted.To the best of our knowledge, this is the first work that shows how to extract the cross-plane thermal conductivity of sub-50 nm(30 nm, 17 nm, and 10 nm)silicon films on buried oxide.The ratio of the extracted cross-plane thermal conductivity of the silicon films over the bulk value is only about 6.9%, 4.3%, and 3.8% at 300 K, respectively.As the thickness of the films is smaller than the phonon mean free path, the classical heat transport theory fails to predict the heat dissipation in nanoscale transistors.Thus, in this study, a ballistic model, derived from the heat transport equation based on extended-irreversible-hydrodynamics(EIT), is used for further investigation, and the simulation results exhibit good consistence with the experimental data.The extracted effective thermal data could provide a good reference for precise device simulations and thermoelectric applications.

Fast-transient techniques for high-frequency DC–DC converters

A 30 MHz voltage-mode controlled buck converter with fast transient responses is presented.An improved differential difference amplifier(DDA)-based Type-III compensator is proposed to reduce the settling times of the converter during load transients,and to achieve near-optimal transient responses with simple PWM control only.Moreover,a hybrid scheme using a digital linear regulator with automatic transient detection and seamless loop transition is proposed to further improve the transient responses.By monitoring the output voltage of the compensator instead of the output voltage of the converter,the proposed hybrid scheme can reduce undershoot and overshoot effectively with good noise immunity and without interrupting the PWM loop.The converter was fabricated in a 0.13μm standard CMOS process using 3.3 V devices.With an input voltage of 3.3 V,the measured peak efficiencies at the output voltages of 2.4,1.8,and 1.2 V are 90.7%,88%,and 83.6%,respectively.With a load step of 1.25 A and rise and fall times of 2 ns,the measured 1%settling times were 220 and 230 ns,with undershoot and overshoot with PWM control of 72 and 76 mV,respectively.They were further reduced to 36 and 38 mV by using the proposed hybrid scheme,and 1%settling times were also reduced to 125 ns.

Simplified Fast Transient Control in Coolerless Pump EDFA for Metro Applications

A novel optical transient suppression technique to dramatically reduce gain variation of EDFA with un-cooled pump is demonstrated experimentally, showing excellent performance of 50us transient time with no more than 0.5dB excursion and 0.25dB offset.

Wide band modeling of large power transformer windings for very fast transient overvoltage (VFTO) analysis

There are some difficulties in using multi-transmission-line (MTL) model for wide band modeling of whole windings of the large power transformer. In this paper, the normalized MTL model is firstly de- rived, with which not only the difficulty of modeling windings with different turn-lengths using MTL can be solved, but also the model can be extended to the modeling of the multi-winding transformer. Secondly, both MTL model and the lumped circuit model on turn basis are mathematically compared in validation of the frequency range and it is pointed out that the lumped circuit model on turn basis is generally valid below 2.5 MHz for EHV and UHV power transformers. Finally, based on the MTL equations, a novel lumped circuit model is derived and it is shown that the valid frequency range of the new circuit is extended to about 4 MHz for modeling large EHV and UHV power transformer windings.

Calculation of all-time apparent resistivity of large loop transient electromagnetic method with very fast simulated annealing

In large loop transient electromagnetic method(TEM),the late time apparent resistivity formula cannot truly reflect the geoelectric model,thus it needs to define the all-time apparent resistivity with the position information of measuring point.Utilizing very fast simulated annealing(VFSA) to fit the theoretical electromagnetic force(EMF) and measured EMF could obtain the all-time apparent resistivity of the measuring points in rectangular transmitting loop.The selective cope of initial model of VFSA could be confirmed by taking the late time apparent resistivity of transient electromagnetic method as the prior information.For verifying the correctness,the all-time apparent resistivities of the geoelectric models were calculated by VFSA and dichotomy,respectively.The results indicate that the relative differences of apparent resistivities calculated by these two methods are within 3%.The change of measuring point position has little influence on the tracing pattern of all-time apparent resistivity.The first branch of the curve of all-time apparent resistivity is close to the resistivity of the first layer medium and the last branch is close to the resistivity of the last layer medium,which proves the correctness of the arithmetics proposed.

An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.

基于子循环自适应串行交错时间匹配算法的油浸式变压器绕组瞬态温升计算

针对传统算法存在的步长调整及耦合点选择问题,该文提出基于子循环自适应串行交错(SCAS)的时间匹配算法。首先,在步长调整方面,通过加入自适应(ATS)-启发式(HTS)混合变步长算法,解决步长无法实时调整的问题;然后,针对耦合点选择问题,该文在传统常规串行交错(CSS)时间匹配算法及现有改进方案子循环常规串行交错(SCSS)的基础上,提出SCAS时间匹配算法,采用自适应方案确定计算时间窗及预定耦合点,并引入指数平滑法对其精度进行保证;最后,该文基于110 kV油浸式电力变压器建立二维瞬态单分区分匝绕组模型,并将所提算法与其他传统方法进行对比分析。结果表明:在精度方面,与传统CSS算法相比SCAS算法的流场及温度场最大平均相对误差均不超过0.45%,在可接受误差范围内;在效率方面,SCAS算法总体计算效率较CSS算法提高了近20倍。同时,为了说明所提算法的工程价值,该文搭建基于110 kV变压器绕组模型的温升实验平台,将SCAS时间匹配算法应用于该模型中,实验结果表明:在精度方面,SCAS算法与实验达到稳态时最大绝对误差为2.7 K;在计算效率上,本文所提算法的计算效率较传统算法提升约46倍,计算步数约为传统的1/47,减少了计算冗余。

Mayr电弧模型下GIS中快速暂态过电压的仿真分析

SF6气体绝缘封闭组合开关(GIS)中隔离开关进行分合母线时,产生快速暂态过电压(VFTO),幅值高且上升速率极快,威胁GIS及相邻设备的绝缘。选取某800 kV GIS隔离开关分合母线的试验电路为研究对象,采用电磁暂态程序(EMTP/ATP)进行建模仿真,隔离开关燃弧时采用Mayr电弧模型,分析其对VFTO的影响,得出考虑Mayr电弧模型时操作隔离开关、断路器侧隔离开关及变压器侧隔离开关的电压波形,并与考虑时变电阻模型的VFTO进行对比。对VFTO波形进行离散傅里叶分析,得到过电压频率、幅值的变化特征,研究结果为GIS绝缘设计提供参考。

电快速瞬变脉冲群串扰耦合分析及防护措施研究

EFT产生的瞬态脉冲干扰可通过电缆耦合进入电子系统的内部,损伤电子设备。为降低瞬态脉冲对电缆串扰耦合的影响,首先利用电磁仿真软件CST建立平行电缆耦合仿真模型,当电压等级为4 kV时,测试电缆的近端串扰电压达到71.2 V,远高于部分敏感器件的阈值;然后通过分析电快速瞬变脉冲群的频谱特性,瞬态脉冲的干扰能量主要集中在1~10 MHz的范围内;最后利用仿真软件Filter Solution设计合理的防护电路。结果表明,防护电路能有效降低瞬态脉冲对电路的影响。

一种双控制模式的同步降压型DC/DC转换器

为突破转换器在输出电容选型上的局限性,保证转换器快速的负载瞬态响应,基于自适应恒定导通时间控制的两种控制模式,提出一种可根据输出电容类型选择控制模式的同步降压型DC/DC转换器。在D-CAP模式下,支持具有适当等效串联电阻的电容等作为输出电容;在电流模式下,支持等效串联电阻较低的陶瓷电容作为输出电容。基于0.35μm BCD工艺,使用Cadence软件对转换器进行瞬态仿真。结果表明,该设计在两种模式下都具有快速的瞬态响应。

基于POD-αATS的油浸变压器瞬态温升降阶自适应变步长计算方法

针对油浸式电力变压器瞬态温升计算效率过低的问题,该文提出本征正交分解-αATS(proper orthogonal decomposition-adaptive time stepping based onαfactor,POD-αATS)降阶自适应变步长瞬态计算方法。首先,推导变压器绕组瞬态温升计算的有限元离散方程;其次,采用POD降阶算法改善传统瞬态计算中存在的条件数过大及方程阶数过高的问题;同时对于瞬态计算中的时间步长选择问题,提出适用于非线性问题的αATS变步长策略;然后,为验证方法的有效性,基于110 kV油浸式电力变压器绕组的基本结构建立二维八分区数值计算模型,同时将计算结果与基于110 kV绕组的温升实验结果进行对比。数值计算及实验结果表明,所提算法与全阶定步长算法在流场和温度场中的精度几乎相同,且流场计算效率提升约45倍,温度场计算效率提升约38倍,计算速度得到显著提高。这一点在温升实验中同样得到验证,说明该文所提算法的准确性、高效性及一定的工程实用性。

一种双环快速瞬态响应无片外电容LDO

针对传统低压差线性稳压器(LDO)需要离片大电容的不足,基于180 nm CMOS工艺设计了一款双环快速瞬态响应的无片外电容LDO。该LDO采用极点分裂技术,以保证在不同负载电流情况下的稳定性,并通过瞬态增强电路检测输出电压的波动来为功率管栅极提供额外充、放电电路,以减小系统的过冲电压。同时,在传统模拟环路的基础上增加了数字辅助环路,以提升LDO的最大负载电流。仿真结果表明,当电源电压为1.8 V,输出电压为1.5 V,该LDO负载电流最大值为275 mA,空载静态电流为39μA。负载电流1~250 mA在1μs的时间跳变时,上冲电压为66 mV,下冲电压为77 mV。结果表明LDO的带载能力、瞬态响应性能在双环路加持下得到显著提升。

一种应用于探测的可预测电流模式FSBB电路

探测器的能源供给离不开DC-DC变换器,先进的控制方法能提高工作效率。预测电流模式控制相比于传统的PI控制具有动态响应快、易于进行过流保护等优点,因此被广泛应用到电力电子控制领域。由于控制回路的问题,不能通过计算开环增益的方式对负载波动与输出电压变化的闭环传递函数进行有效地设计。因此,提出了一种在不加前馈控制的情况下,基于预测电流模式控制四开关Buck-Boost(four-switch Buck-Boost,FSBB)变换器补偿器的设计方案,该方法能提升负载动态响应,通过实验数据,证明了该方法的有效性。

特高压GIS用磁环型阻尼母线VFTO抑制性能试验研究

GIS中的隔离开关在操作过程中由于断口重复击穿会产生特快速瞬态过电压(very fast transient overvoltage,VFTO)。VFTO幅值高、波前陡,严重威胁电气一次绝缘,并会产生电磁干扰问题。目前,实际工程中除采用带投切电阻的隔离开关抑制VFTO外,还可以采用磁环型阻尼母线对VFTO进行抑制。为了保证GIS的可靠性,磁环型阻尼母线抑制性能的优劣至关重要。为此,亟需研究提出一种在试验室进行磁环抑制效果的评定方法。文中针对磁环型阻尼母线的抑制性能,设计了专门的抑制性能试验回路,该试验回路中主要包含套管、阻尼电阻、放电间隙、磁环型阻尼母线、GIS短母线、VFTO传感器以及VFTO测量系统。该试验回路的额定电压为1100 kV,回路中的套管和母线可承受的额定工频电压为1100 kV,阻尼电阻的阻值为560Ω或1500Ω,放电间隙可以通过电极间距的调整产生不同等级的放电电压值和放电陡波,陡波上升时间可以达到30 ns。应用该试验回路在试验室进行模拟试验的方法检验磁环型阻尼母线的抑制效果,试验结果表明,该试验回路可以完成磁环型阻尼母线抑制效果的检验,可以定量地给出抑制效果的优劣。该方法可以推广到其他电压等级的GIS产品中,有助于推动实现磁环型阻尼母线的工业化设计、制造及检验。

巨型射电望远镜(FAST)反射面支承结构日照温度场效应分析

研究分析500m口径球冠状巨型射电望远镜(Five-hundred-meter Aperture Spherical Telescope,简称FAST)反射面支承结构的日照温度场效应。借助ANSYS热分析模块,建立FAST反射面结构和实测周边地形的整体参数化有限元模型,计算最不利气候之一即夏季晴天无云天气各时刻的空气对流换热、太阳辐射、周围环境的长波辐射换热以及阴影遮挡等各种边界条件,在较为合理的结构初始温度场下,进行连续多天的时程分析,直至结构的任一点温度收敛于24h前的结果,并据此结果计算反射面结构温度变形和温度应力,给出日照下反射面形状拟合精度随时间的变化规律、结构应力的变化范围和分布规律。结果表明在日照下结构的温度场较不均匀,局部温差最高达到了11℃,较大地影响了反射面形状精度,为将来结构的设计、施工、监测以及控制提供了参考信息。

高稳定性快速响应的无片外电容LDO设计

针对光通信集成电路及片上系统的电源与电路之间相互干扰的问题,基于TSMC 65 nm CMOS工艺,设计了一种高稳定性、快速响应的无片外电容低压差线性稳压器(Capacitor-Less Low Dropout Regulator,CL-LDO)。LDO电路包括带隙基准模块、推挽误差放大器、电源抑制比(Power Supply Rejection,PSR)增强电路和尖峰抑制电路。推挽误差放大器为共栅极输入,有效降低了输出阻抗。放大器交叉耦合输入的方式显著提升了功率管摆率,内部添加拓补结构解决了环路增益过低及对称性差的问题,采用密勒补偿实现了0~100 pF全负载电容条件下系统稳定。主环路结合尖峰抑制电路改善瞬态性能,PSR增强电路产生可修调的负电容消除了功率管栅端产生的电源纹波,有效提升了LDO中频段电源抑制比。仿真结果表明,负载电流在0~100 mA内,该LDO的上冲电压和下冲电压分别为58 mV和89 mV,最小恢复时间为1.2μs,全负载范围内最差的相位裕度为64°,空载状态下的电源抑制比为99.2 dB@10 kHz,在不同工艺角下最差的负载调整率和线性调整率分别为0.016 mV/mA和5.1 mV/V。

基于软注意力GRU模型的堆芯瞬态热工水力参数预测方法研究

反应堆在各种工况下堆芯瞬态热工水力参数预测的准确性,直接影响到反应堆的安全性。质量流量和温度作为堆芯热工水力的重要参数,二者常被建模为时间序列预测问题。研究旨在解决瞬时条件下堆芯热工水力参数连续预测的精度问题,检验基于注意力机制的门控循环单元在核心参数预测中的可行性。本文采用1/2中国实验快堆(China Experimental Fast Reactor,CEFR)为研究对象,使用快堆子通道程序SUBCHANFLOW生成瞬态堆芯热工水力参数的时间序列,采用基于软注意力的门控循环单元(Gated Recurrent Unit,GRU)模型预测堆芯的质量流量和温度时间序列。结果表明:相较于自适应径向基(Radial Basis Function,RBF)神经网络,本文使用的软注意力的GRU网络模型预测结果更好,温度在步长为3的情况下平均相对误差不超过0.5%,在15 s内预测效果较好;质量流量在步长为10的情况下平均相对误差不超过5%,且在后续12 s内预测效果较好。本文构建的模型不仅在连续预测过程中表现出更高的预测精度,且能捕捉到动态时间序列中的趋势特点,这对维护反应堆安全,有效防止核电厂事故有极大的用处。基于软注意力的GRU模型能在瞬态反应堆工况下提供一段时间的连续预测,在工程应用中和提高反应堆安全性上具有一定的参考价值。

基于自适应偏置的无片外电容LDO设计

提出了一种无片外电容低压差线性稳压器(LDO),该稳压器采用有源频率补偿(AFC)电路和自适应偏置电路在宽负载范围内实现快速瞬态响应。有源频率补偿(AFC)电路采用双环路微分器结构,不仅有效减小了片上补偿电容的面积,而且提高了整体电路的瞬态响应。采用源极跟随器结构实现的自适应偏置电路用于有源频率补偿电路的偏置,进一步改善了LDO的瞬态响应。电路采用SMIC 0.18μm标准CMOS工艺制造,有效芯片面积为0.038 mm^(2)。仿真结果表明,在200 mV压差下,最大输出电流为150 mA,最大负载电容为100 pF。在边沿时间为100 ns的最大负载电流变化时,过冲和下冲电压分别为185 mV和405 mV,电路恢复时间分别为0.45μs和0.2μs。

一种基于冲激响应的瞬态噪声近似预报方法

为了提高水下结构瞬态噪声的计算效率和准确性,提出一种基于冲激响应的瞬态噪声近似预报方法。该方法适用于已知结构表面法向振速时的瞬态辐射噪声预报,它通过时域快速算法求解与辐射问题相互易的脉冲点源散射问题获取结构表面各单元的冲激响应,再将各冲激响应与该处相应的法向振速信号作卷积,最后以单元面积为权重对卷积结果进行加权求和便可计算出最终的瞬态噪声场。利用2种典型的解析模型,通过与时域解析解的对比验证了该方法的正确性。针对镶嵌于圆形障板的管阵列结构,利用该近似预报方法对已确定法向振速边界条件下的瞬态辐射噪声进行计算,并结合该模型几何结构分析了考察场点处辐射噪声信号的时间特征及声能量空间指向性。