Tunable Three-Wavelength Fiber Laser and Transient Switching between Three-Wavelength Soliton and Q-Switched Mode-Locked States

We report a passive mode-locked fiber laser that can realize single-wavelength tuning and multi-wavelength spacing tuning simultaneously.The tuning range is from 1528 nm–1560 nm,and up to three bands of soliton states can be output at the same time.These results are confirmed by a nonlinear Schrodinger equation model based on the split-step Fourier method.In addition,we reveal a way to transform the multi-wavelength soliton state into the Q-switched mode-locked state,which is period doubling.These results will promote the development of optical communication,optical sensing and multi-signal pulse emission.

Chalcogenide Ovonic Threshold Switching Selector

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

Resistive switching behavior and mechanism of HfO_(x) films with large on/off ratio by structure design

Different bilayer structures of HfO_(x)/Ti(TiO_(x)) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed. Highly improved on/off ratio(~104) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_(x) sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_(x)-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.

Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

Machine-Learning Based Packet Switching Method for Providing Stable High-Quality Video Streaming in Multi-Stream Transmission

Broadcasting gateway equipment generally uses a method of simply switching to a spare input stream when a failure occurs in a main input stream.However,when the transmission environment is unstable,problems such as reduction in the lifespan of equipment due to frequent switching and interruption,delay,and stoppage of services may occur.Therefore,applying a machine learning(ML)method,which is possible to automatically judge and classify network-related service anomaly,and switch multi-input signals without dropping or changing signals by predicting or quickly determining the time of error occurrence for smooth stream switching when there are problems such as transmission errors,is required.In this paper,we propose an intelligent packet switching method based on the ML method of classification,which is one of the supervised learning methods,that presents the risk level of abnormal multi-stream occurring in broadcasting gateway equipment based on data.Furthermore,we subdivide the risk levels obtained from classification techniques into probabilities and then derive vectorized representative values for each attribute value of the collected input data and continuously update them.The obtained reference vector value is used for switching judgment through the cosine similarity value between input data obtained when a dangerous situation occurs.In the broadcasting gateway equipment to which the proposed method is applied,it is possible to perform more stable and smarter switching than before by solving problems of reliability and broadcasting accidents of the equipment and can maintain stable video streaming as well.

An Interconnected Multi-Plane Multi-Stage Fault-Tolerant On-Board Switching Fabric

The harsh space radiation environment compromises the reliability of an on-board switching fabric by leading to cross-point and switching element(SE)faults.Different from traditional faulttolerant switching fabrics only taking crosspoint faults into account,a novel Input and Output Parallel Clos network,referred to as the(p_1,p_2)-IOPClos,is proposed to tolerate both cross-point and SE faults.In the(p_1,p_2)-IOPClos,there are p_1 and p_2 expanded parallel switching planes in the input and output stages,respectively.The multiple input/output switching planes are interconnected through the middle stage to provide multiple paths in each stage by which the network throughput can be increased remarkably.Furthermore,the network reliability of the(p_1,p_2)-IOPClos under the above both kinds of faults is analyzed.The corresponding implementation cost is also presented along with the network size.Both theoretical analysis and numerical results indicate that the(p_1,p_2)-IOPClos outperforms traditional Clos-type networks at reliability,while has less implementation cost than the multi-plane Clos network.

Modeling of Fault-tolerant Flux-switching Permanent-magnet Machines for Predicting Magnetic and Armature Reaction Fields

The paper develops accurate analytical subdomain models for predicting the magnetic and armature reaction fields in fault-tolerant flux-switching permanent-magnet machines.The entire region is divided into five subdomains,followed by rotor slots,air-gap,stator slots,PM,and external air-gap imported to account for flux leakage.The coil turns and the remanence of magnets are adjusted by keeping the magnetic and electrical loading on the motor constant.The distance between the centers of two adjacent stator slots varies due to the introduction of faulttolerant teeth.According to the variable separation method,the general solution expression of each region can be determined by solving the partial differential systems of equations.The magnetic field distributions of subdomains are obtained by applying the continuity conditions between adjacent regions.Some analytical field expressions are represented as new forms under armature reaction field condition compared to those under no-load condition.Based on the developed analytical models,the flux density distribution and the electromagnetic performance can be calculated under no-load or armature reaction field condition separately.The finite element analysis is carried out to verify the validity of the proposed analytical model.

Volatile threshold switching memristor:An emerging enabler in the AIoT era

With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.

Finite-time fault-tolerant control of teleoperating cyber physical system against faults

This paper studies a finite-time adaptive fractionalorder fault-tolerant control(FTC)scheme for the slave position tracking of the teleoperating cyber physical system(TCPS)with external disturbances and actuator faults.Based on the fractional Lyapunov stability theory and the finite-time stability theory,a fractional-order nonsingular fast terminal sliding mode(FONFTSM)control law is proposed to promote the tracking and fault tolerance performance of the considered system.Meanwhile,the adaptive fractional-order update laws are designed to cope with the unknown upper bounds of the unknown actuator faults and external disturbances.Furthermore,the finite-time stability of the closed-loop system is proved.Finally,comparison simulation results are also provided to show the validity and the advantages of the proposed techniques.

Cooperative Target Tracking of Multiple Autonomous Surface Vehicles Under Switching Interaction Topologies

This paper is concerned with the cooperative target tracking of multiple autonomous surface vehicles(ASVs)under switching interaction topologies.For the target to be tracked,only its position can be measured/received by some of the ASVs,and its velocity is unavailable to all the ASVs.A distributed extended state observer taking into consideration switching topologies is designed to integrally estimate unknown target dynamics and neighboring ASVs'dynamics.Accordingly,a novel kinematic controller is designed,which takes full advantage of known information and avoids the approximation of some virtual control vectors.Moreover,a disturbance observer is presented to estimate unknown time-varying environmental disturbance.Furthermore,a distributed dynamic controller is designed to regulate the involved ASVs to cooperatively track the target.It enables each ASV to adjust its forces and moments according to the received information from its neighbors.The effectiveness of the derived results is demonstrated through cooperative target tracking performance analysis for a tracking system composed of five interacting ASVs.

A Novel Multi-Granularity Flexible-Grid Switching Optical-Node Architecture

A novel multi-granularity flexible-grid switching optical-node architecture is proposed in this paper.In our system,the photonic lanterns are used as mode division multiplexing/demultiplexing(MD-Mux/MD-Demux)for selecting mode.The wavelength division multiplexer/demultiplexer(WDMux/WD-Demux)and the fiber bragg gratings(FBGs)are used to select wavelength channels with the various grid.The experimental results show that the transmission bandwidth covers the C+L band,the average transmission loss is-13.4 dB,and the average crosstalk is-30.5 dB.The optical-node architecture is suit for mode division multiplexing(MDM)optical communication system.

Disturbance observer-based fuzzy fault-tolerant control for high-speed trains with multiple disturbances

The fault-tolerant control problem is investigated for high-speed trains with actuator faults and multiple disturbances.Based on the novel train model resulting from the Takagi–Sugeno fuzzy theory, a sliding-mode fault-tolerant control strategy is proposed. The norm bounded disturbances which are composed of interactive forces among adjacent carriages and basis running resistances are rearranged by the fuzzy linearity technique. The modeled disturbances described as an exogenous system are compensated for by a disturbance observer. Moreover, a sliding mode surface is constructed, which can transform the stabilization problem of position and velocity into the stabilization problem of position errors and velocity errors, i.e., the tracking problem of position and velocity. Based on the parallel distributed compensation method and the disturbance observer, the fault-tolerant controller is solved. The Lyapunov theory is used to prove the stability of the closed-loop system. The feasibility and effectiveness of the proposed fault-tolerant control strategy are illustrated by simulation results.

Heterogeneous Fault-Tolerant Aggregate Signcryption with Equality Test for Vehicular Sensor Networks

The vehicular sensor network (VSN) is an important part of intelligent transportation, which is used for real-timedetection and operation control of vehicles and real-time transmission of data and information. In the environmentofVSN, massive private data generated by vehicles are transmitted in open channels and used by other vehicle users,so it is crucial to maintain high transmission efficiency and high confidentiality of data. To deal with this problem, inthis paper, we propose a heterogeneous fault-tolerant aggregate signcryption scheme with an equality test (HFTASET).The scheme combines fault-tolerant and aggregate signcryption,whichnot onlymakes up for the deficiency oflow security of aggregate signature, but alsomakes up for the deficiency that aggregate signcryption cannot tolerateinvalid signature. The scheme supports one verification pass when all signcryptions are valid, and it supportsunbounded aggregation when the total number of signcryptions grows dynamically. In addition, this schemesupports heterogeneous equality test, and realizes the access control of private data in different cryptographicenvironments, so as to achieve flexibility in the application of our scheme and realize the function of quick searchof plaintext or ciphertext. Then, the security of HFTAS-ET is demonstrated by strict theoretical analysis. Finally, weconduct strict and standardized experimental operation and performance evaluation, which shows that the schemehas better performance.

Polymeric assembled nanoparticles through kinetic stabilization by confined impingement jets dilution mixer for fluorescence switching imaging

Traditional fluorescence switching molecules achieving the state change between on and off states commonly based on UV irradiation. However, it is worth noting that UV irradiation is harmful to both the cancer cells and the normal cells. To achieve fluorescence switching under visible wavelength and avoid complicate molecular design, a fluorophore of 2,4,5,6-tetrakis(carbazol-9-yl)-1,3-dicyanobenzene(4Cz IPN) and a quencher of diarylethene(DAE) were physically incorporated within the biocompatible block copolymer poly(lactic-co-glycolic acid)-b-poly(ethylene glycol)(PLGA-b-PEG) to form 4Cz IPNDAE nanoparticles(NPs) through flash nanoprecipitation(FNP). By using the FNP method, the NPs were prepared within milliseconds in a confined impingement jets dilution(CIJ-D) mixer. Quenching and recovery of fluorescence could achieve in the presence of DAE under 475 nm and 560 nm irradiation.Appropriate structure and fluorescent properties of the nanoparticles can be tuned by external conditions for their efficient fluorescence resonance energy transfer(FRET) in a kinetic stabilization process. This NPs formation process was further optimized by varying the dilution ratio, Reynolds number(Re) and polymer concentration to modulate the mixing and particle nucleation and growth process. The size and fluorescence switching properties of the NPs were systematically investigated in solution and in cellular uptake experiments. This work is anticipated to provide a simple and highly effective engineering strategy for the modulation of fluorescence switching nanoparticles and beneficial to its engineering application.

Lattice thermal conductivity switching via structural phase transition in ferromagnetic VI_(3)

The realization of reversible thermal conductivity through ferromagnetic ordering can improve the heat management and energy efficiency in magnetic materials-based devices.VI_(3),as a new layered ferromagnetic semiconductor,exhibits a structural phase transition from monoclinic(C2/m)to rhombohedral(R3^(-))phase as temperature decreases,making it a suitable platform to investigate thermal switching in magnetic phase transition materials.This work reveals that the thermal switching ratio of VI_(3)can reach 3.9 along the a-axis.Mechanical properties analysis indicates that the C2/m structure is stiffer than the R^(-)one,causing the larger phonon velocity in C2/m phase.Moreover,due to the fewer phonon branches in C2/m phase,the number of phonon–phonon scattering channels in C2/m phase is smaller compared to that of R^(-)phase.Both the larger phonon velocity and the longer phonon lifetime lead to larger lattice thermal conductivity in C2/m phase.This study uncovers the mechanical and thermal properties of VI_(3),which provides useful guides for designing magnetic materials-based devices such as thermal switch.

Resistive switching properties of SnO_(2)nanowires fabricated by chemical vapor deposition

Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum.We find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric field.Moreover,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric field.The nanodevice also shows non-volatile resistive memory characteristic.The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au device.Our results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.

Ta thickness effect on field-free switching and spin-orbit torque efficiency in a ferromagnetically coupled Co/Ta/CoFeB trilayer

Current induced spin-orbit torque(SOT)switching of magnetization is a promising technology for nonvolatile spintronic memory and logic applications.In this work,we systematically investigated the effect of Ta thickness on the magnetic properties,field-free switching and SOT efficiency in a ferromagnetically coupled Co/Ta/Co Fe B trilayer with perpendicular magnetic anisotropy.We found that both the anisotropy field and coercivity increase with increasing Ta thickness from0.15 nm to 0.4 nm.With further increase of Ta thickness to 0.5 nm,two-step switching is observed,indicating that the two magnetic layers are magnetically decoupled.Measurements of pulse-current induced magnetization switching and harmonic Hall voltages show that the critical switching current density increases while the field-free switching ratio and SOT efficiency decrease with increasing Ta thickness.Both the enhanced spin memory loss and reduced interlayer exchange coupling might be responsible for theβ_(DL)decrease as the Ta spacer thickness increases.The studied structure with the incorporation of a Co Fe B layer is able to realize field-free switching in the strong ferromagnetic coupling region,which may contribute to the further development of magnetic tunnel junctions for better memory applications.

Finite-Time H∞ Control of Switched Nonlinear Systems under State-Dependent Switching

This paper investigates the finite-time H∞ control problem of switched nonlinear systems via state-dependent switching and state feedback control. Unlike the existing approach based on time-dependent switching strategy, in which the switching instants must be given in advance, the state-dependent switching strategy is used to design switching signals. Based on multiple Lyapunov-like functions method, several criteria for switched nonlinear systems to be finite-time H∞ control are derived. Finally, a numerical example with simulation results is provided to show the validity of the conclusions.

Mutation detection and fast identification of switching system based on data-driven method

In the engineering field,switching systems have been extensively studied,where sudden changes of parameter value and structural form have a significant impact on the operational performance of the system.Therefore,it is important to predict the behavior of the switching system,which includes the accurate detection of mutation points and rapid reidentification of the model.However,few efforts have been contributed to accurately locating the mutation points.In this paper,we propose a new measure of mutation detection—the threshold-based switching index by analogy with the Lyapunov exponent.We give the algorithm for selecting the optimal threshold,which greatly reduces the additional data collection and the relative error of mutation detection.In the system identification part,considering the small data amount available and noise in the data,the abrupt sparse Bayesian regression(abrupt-SBR)method is proposed.This method captures the model changes by updating the previously identified model,which requires less data and is more robust to noise than identifying the new model from scratch.With two representative dynamical systems,we illustrate the application and effectiveness of the proposed methods.Our research contributes to the accurate prediction and possible control of switching system behavior.

Orbital torque of Cr-induced magnetization switching in perpendicularly magnetized Pt/Co/Pt/Cr heterostructures

The spin–orbit torque via the spin Hall effect of heavy metals has shown promising prospect in driving the magnetization switching in spintronic devices due to the generated spin current from heavy metals.Recently,the 3d-light metals have been predicted the ability to generate orbital current and the associated orbital torques from the orbital Hall effect.However,few experiments have been carried out since it is quite hard to directly detect the orbital current-generated orbital torque.Here,we report an effective method to demonstrate the strong orbital torques in light metal Cr through a conversion process from orbital current to spin current by introducing the Pt interfacial layer in perpendicularly magnetized symmetric Pt/Co/Pt structures.A quite large and monotonically growth of orbital torque efficiency in Pt/Co/Pt/Cr with the increase of the thickness of Cr layer is obtained with the largest effective orbital torque efficiency around 2.6 Oe/(MA·cm^(-2))(1 Oe=79.5775 A·m^(-1)).The ability of orbital torque to drive the magnetization switching is also reported with the critical switching current density down to the order of 106A·cm^(-2).Our findings prove the efficiency for switching the magnetization from light metal Cr layers through the orbital Hall effect.