Charge distribution into illuminated dye-doped surface stabilized ferroelectric liquid crystal cell

Surface stabilized （anti） ferroelectric liquid crystal cells can be used as an optically addressed media for optical data processing. The structure of the cell has to contain a photo sensible agent, i.e, an absorbing dye-doped orienting layer. The all-optical generation of the diffractive grating can be done due to the switching parameters of the smectic slab within cells with a sensitive layer. This Letter considers a study of the optically induced charge generation into the dye-doped layer, and the explanation of the phenomena of the selective molecular director reorientation, while cell driving what leads to the induction of phase grating.

Memristive switching in the surface of a charge-density-wave topological semimetal

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conversion,and topological quantum computation.Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic research.However,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers.In this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe_(4))2I.We find that the surface state of(TaSe_(4))2I presents out-of-plane ferroelectric polarization due to surface reconstruction.With the combination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable barrier height can be achieved in(TaSe_(4))2I-metal contact.By employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe_(4))2I with on/off ratio up to 103,endurance over 103 cycles,and good retention characteristics.The origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelectricity and band topology.The emergence of ferroelectricity in(TaSe_(4))2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the implementation of topological materials in functional electronic devices.