ANALYTICAL SOLUTION FOR RESPONSE OF FERROELECTRIC THIN FILM TO INFRARED RADIATION

Micro-bolometer pixel is an essential element in the infrared focal plane array （IRFPA） of infrared detectors. Its response to infrared radiation is analyzed in this paper. The pixel structure is modeled as a composite laminate thin plate whose sides are measured with the thickness from 0.1-1 μm. Its middle ply is a ferroelectric thin film. Its top surface is covered with a gold or platinum infrared absorber, while the bottom surface is deposited with platinum or lanthanum-nickel. Meanwhile both surfaces are a pair of electrodes. The top surface receives infrared radiation pulses successively. For the very tiny micro bolometer pixel, it is assumed that the infrared radiation is uniformly distributed on the plate. Furthermore, as the ratio of the side length to the thickness of the plate is dramatically large, it is assumed that heat transfer only takes place across the thickness of the plate. The thermal-electric-mechanical coupling governing equations are solved in a form of Fourier series. Results of the displacement, temperature variation and electric output signals of the micro bolometer pixel structure under infrared radiation are obtained, analyzed and compared with experimental data.

Size Effects of the Critical Temperature in Ferroelectric Thin Films

The size effects of the critical behaviors for the systems of interacting spins are discussed extensively inliterature.In this paper,the finite-size dependence of the critical temperature and susceptibility of the ferroelectric thinfilm are investigated numerically based on the four-state Potts model with the nearest-neighbor interactions between thedipole moments.The four orientations of the domains exist in the ferroelectric film and the movement of the domainwalls determines the polarization switching process besides the boundary conditions of the film.The critical exponentsare obtained and our investigations show that the boundary conditions play the important roles for the ferroelectricproperties of the thin films and the critical behavior of the thin films strongly depends on the feature of the surface.

Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

By taking into account structural transition zones near the lateral and thickness direction edges,this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation.The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film

By modifying the interchange interactions and the transverse fields on the epitaxy surface layer, this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green＇s function technique based on the transverse Ising model with a four-spin interaction. The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green＇s function. The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer. The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.

Effect of Annealing on Ferroelectric Properties of Bi_ (3.25)La_(0.75)Ti_3O_ (12) Thin Films Prepared by the Sol-gel Method

Bi3.25La0.75Ti3O12（BLT）thin films were prepared on Pt/Ti/SiO2/Si substrate by the sol-gel method.The effect of annealing on their structures and ferroelectric properties was investigated.The XRD patterns indicate that the BLT films annealed at different temperatures are randomly orientated and the single perovskite phase is obtained at 550℃.The remmant polarization increnses and the coercive field decreases with the annealing temperature increasing.The leakage current density of the BLT films annealed at 700℃ is about 5.8×10^-8A/cm^2 at the electrie field of 250kv/cm.

Strain tunability of dielectric and ferroelectric properties in epitaxial lead titanate thin films

Many distinguished properties of epitaxial ferroelectric thin films can be tunable through the misfit strain.The strain tunability of ferroelectric and dielectric properties in epitaxial lead titanate ultrathin films is numerically investigated by using a phase field model,in which the surface effect of polarization is taken into account.The response of polarization to the applied electric field in the thickness direction is examined with different misfit strains at room temperature.It is found that a compressive misfit strain increases the coercive field and the remanent polarization while a tensile misfit strain decreases both of them.The nonlinear dielectric constants of the thin films with tensile misfit strains are much larger than those of the thin films without misfit strains,which are attributed to the existence of the a/c/a/c multiple domains in the thin films under tensile misfit strains.

Enhanced Ferroelectric Polarization in Laser-ablated Bi4Ti3O12 Thin Films by Controlling Preferred Orientation

Polycrystalline Bi_4Ti_3O_（12） thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt（111）/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi_4Ti_3O_（12） thin films. The films with high fractions of a-axis and random orientations, i e, f（a-sxis） = 28.3% and f（random） = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm^2, respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization（2 Pr = 35.5 μC/cm^2） was obtained for the Bi_4Ti_3O_（12） thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi_4Ti_3O_（12） films.

Patterning of large area nanoscale domains in as-grown epitaxial ferroelectric PbTiO_(3)films

Effective tuning of nanoscale domain structures provides fundamental basis for controlling and engineering of various functionalities in ferroelectric materials.In this work,we demonstrate the precise patterning of nanoscopic domain structures in as-grown epitaxial PbTiO_(3)(PTO)films by merely introducing an ultrathin pre-patterned doping layer(e.g.,Fe-doped PTO).The doping layer can effectively reverse the interfacial built-in bias,consequent to a reversed initial polarization reorientation in the as-grown film,which makes it possible to transfer the nano-patterns in the doping layer into the domain structure of ferroelectric films.For instance,we have successfully fabricated large area ordered array of nanoscale cylindrical domains(downward polarization)embedded in the matrix domain with opposite polarization(upward polarization)in PTO film.These nanoscale cylinder domains also allow deterministic and reversible erasure and creation induced by biased tip scanning.The results provide an effective pathway for on-demand patterning of large area nanoscale domains in the as-grown films,which may find applications in a wide range of nanoelectronic devices.

Toward artificial intelligent self-cooling electronic skins:Large electrocaloric effect in all-inorganic flexible thin films at room temperature

Intelligent robots have assisted mankind in achieving and operating thousands of functions,especially with the arrival of the artificial intelligent.However,heat dissipation and thermal management in the intelligent robots remain big challenges,which limit their miniaturization and performance.Electrocaloric(EC)materials,which exhibit temperature change in response to the application or withdrawal of an electric field,open a new strategy for cooling technology and have gained a flurry of research interest in recent years.Toward artificial intelligent self-cooling electronic skins,large-scale flexible materials with high EC effect near room temperature are in demand.Here,we report a large room temperature EC effect in flexible Pb_(0.82)Ba_(0.08)La_(0.1)Zr0.9Ti_(0.1)O_(3)(PBLZT)inorganic thin films via a transfer-free cost-effective sol-gel process,assisted by unique two-dimensional mica substrates.The maximum adiabatic temperature change and isothermal entropy change of the flexible PBLZT thin films reach to 22.5 K and 25.9 J K^(-1) kg^(-1) at room temperature.In particular,the flexible PBLZT thin films exhibit a stable EC effect both under bending state and after bending for 20000 times.Our flexible EC materials offer an alternative strategy to the development of cooling technologies for both artificial intelligent robots and personal wearable cooling devices.