By taking into account structural transition zones near the lateral and thickness direction edges,this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin fi...By taking into account structural transition zones near the lateral and thickness direction edges,this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation.The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.展开更多
Sol-gel process was adopted to prepare BiFeO3 films.BiFeO3 films were deposited on LaNiO3 coated Si（100） substrates annealed at 500 and 550 ℃,respectively.The X-ray diffraction results reveal that BiFeO3 film has a...Sol-gel process was adopted to prepare BiFeO3 films.BiFeO3 films were deposited on LaNiO3 coated Si（100） substrates annealed at 500 and 550 ℃,respectively.The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c.The film annealed at 500 ℃ has larger remnant polarization（Pr） of 35.3 μC/cm2.For the film annealed at 550 ℃,smaller remnant polarization of Pr=4.8 μC/cm^2 is observed for its low breakdown electric field.Lower leakage conduction is observed in the film annealed at 500 ℃ at low applied field.展开更多
An open-ended coaxial line reflection method especially suitable for meas-uring the dielectric properties of biological tissue in vivo is described.This method offersthe advantage of not requiring any special preparat...An open-ended coaxial line reflection method especially suitable for meas-uring the dielectric properties of biological tissue in vivo is described.This method offersthe advantage of not requiring any special preparation of the samples to be measured but aclose contact with the open end of a coaxial line.It is,therefore,very convenient to acquirea large number of measurement data in broad band rapidly.The method may also be usedto measure the properties of other substances.The measuring system consists of a networkanalyzer controlled by a microcomputer and calibrated by using ANA procedure to elimi-hate the influnce of error network introduced by the adapter,some connectors,etc.In or-der to reach higher accuracy,the iterative method is used to determine the parameters ofthe equivalent circuit.Measurements of permeativities of some living tissues have been per-formed in the frequency band of 0.5-2GHz.Compared with the results known in somepapers,the validity of this method has been confirmed.The difference in dielectric proper-ties between living and dead tissues,and the tissue permeativites(ε)versus frequency andduration of measurement after death have also been measured.展开更多
（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental r...（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.展开更多
Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile memories.In this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed ...Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile memories.In this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed by annealing treatments.The microstructures of BLT thin films were investigated via X-ray diffraction(XRD),scanning electron microscopy(SEM)and atomic force microscopy(AFM).With the increase in annealing temperature,the grain size increased significantly and the preferred crystalline orientation changed.A well-saturated hysteresis loop with a superior remnant polarization of 15.4μC/cm^(2) was obtained for BLT thin films annealed at 700°C.The results show that the dielectric constant decreased with the increase in grain sizes.展开更多
We have investigated the preparation and properties of Bi3.4Ce0.6Ti3O12 thin films. The Bi3.4Ce0.6Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of...We have investigated the preparation and properties of Bi3.4Ce0.6Ti3O12 thin films. The Bi3.4Ce0.6Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us- ing X-ray diffraction and atomic force microscopy. The thin films showed a perovskite phase and dense microstructure. The dielectric constant and the dissi- pation factor of the Bi3.4Ce0.6Ti3O12 thin films were about 172 and 0.031 at 1 kHz, respectively. The 2Pr and 2Ec of the Bi3.4Ce0.6Ti3O12 thin films were 67.1 μC/cm2 and 299.7 kV/cm, respectively, under an applied field of 600 kV/cm. The Bi3.4Ce0.6Ti3O12 film did not show fatigue up to 4.46×109 switching cycles at a frequency of 1 MHz, and showed good insulating behavior according to the test of leakage current.展开更多
We have prepared the Ho-substituted bismuth titanate (Bi3.4Ho0.6Ti3O12, BHT) thin films on Pt/Ti/SiO2/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ra...We have prepared the Ho-substituted bismuth titanate (Bi3.4Ho0.6Ti3O12, BHT) thin films on Pt/Ti/SiO2/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure. The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm2 and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about 310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×109 switching cycles at 1 MHz frenquency, and the BHT film shows good in-sulating behavior according to the test of leakage current.展开更多
The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV fil...The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.展开更多
Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser deposition.Microstructure studies with X-ray di®ract...Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser deposition.Microstructure studies with X-ray di®raction and transmission electron microscopy reveal that the as-grown Ba(Zr_(0.2)Ti_(0.8))O_(3) thin films are c-axis oriented with an atomic sharp interface.The films have good single crystallinity and good epitaxial quality.The interface relationship was determined to be[100]Mn.BZT//[100]MgO and(001)Mn.BZT//(001)MgO.Nanoscale order/disorder relaxor structures were found with nano-columnar structures.The microwave dielectric measurements(15-18GHz)indicate that the¯lms have excellent dielectric properties with large dielectric constant value,high tunability,and low dielectric loss,promising the development of room temperature tunable microwave elements.展开更多
文摘By taking into account structural transition zones near the lateral and thickness direction edges,this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation.The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.
基金Funded by the National Natural Science Foundation of China(No.10874075)the Key Program of Hubei Province Education Committee(No. D20082203)
文摘Sol-gel process was adopted to prepare BiFeO3 films.BiFeO3 films were deposited on LaNiO3 coated Si（100） substrates annealed at 500 and 550 ℃,respectively.The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c.The film annealed at 500 ℃ has larger remnant polarization（Pr） of 35.3 μC/cm2.For the film annealed at 550 ℃,smaller remnant polarization of Pr=4.8 μC/cm^2 is observed for its low breakdown electric field.Lower leakage conduction is observed in the film annealed at 500 ℃ at low applied field.
文摘An open-ended coaxial line reflection method especially suitable for meas-uring the dielectric properties of biological tissue in vivo is described.This method offersthe advantage of not requiring any special preparation of the samples to be measured but aclose contact with the open end of a coaxial line.It is,therefore,very convenient to acquirea large number of measurement data in broad band rapidly.The method may also be usedto measure the properties of other substances.The measuring system consists of a networkanalyzer controlled by a microcomputer and calibrated by using ANA procedure to elimi-hate the influnce of error network introduced by the adapter,some connectors,etc.In or-der to reach higher accuracy,the iterative method is used to determine the parameters ofthe equivalent circuit.Measurements of permeativities of some living tissues have been per-formed in the frequency band of 0.5-2GHz.Compared with the results known in somepapers,the validity of this method has been confirmed.The difference in dielectric proper-ties between living and dead tissues,and the tissue permeativites(ε)versus frequency andduration of measurement after death have also been measured.
基金the National Natural Science Foundation of China(No.60571009)
文摘（Ba0.4Pb0.3）Sr0.3TiO3 thin films were fabricated via pulsed laser deposition （PLD） technique on Pt/TiO2/SiO2/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P, remnant polarization Pr and coercive field E were about 4.6 μC/cm2, 2.5 μC/cm2 and 23 kV/cm （the coercive voltage is 0.7 V）, respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories （NvFeRAMs）.
基金supported by the Research Foundation of Liaocheng University(No.318051939)Opening Project of Beijing Key Laboratory of Digital Stomatology(PKUSS20210301)+1 种基金Natural Science Foundation of Shandong Province of China(Nos.ZR2020ME031,ZR2020ME033)Innovation Team of Higher Educational Science and Technology Program in Shandong Province(No.2019KJA025).
文摘Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile memories.In this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed by annealing treatments.The microstructures of BLT thin films were investigated via X-ray diffraction(XRD),scanning electron microscopy(SEM)and atomic force microscopy(AFM).With the increase in annealing temperature,the grain size increased significantly and the preferred crystalline orientation changed.A well-saturated hysteresis loop with a superior remnant polarization of 15.4μC/cm^(2) was obtained for BLT thin films annealed at 700°C.The results show that the dielectric constant decreased with the increase in grain sizes.
基金the Natural Science Foundation of Hubei Province (Grants No. 2004ABA082)
文摘We have investigated the preparation and properties of Bi3.4Ce0.6Ti3O12 thin films. The Bi3.4Ce0.6Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us- ing X-ray diffraction and atomic force microscopy. The thin films showed a perovskite phase and dense microstructure. The dielectric constant and the dissi- pation factor of the Bi3.4Ce0.6Ti3O12 thin films were about 172 and 0.031 at 1 kHz, respectively. The 2Pr and 2Ec of the Bi3.4Ce0.6Ti3O12 thin films were 67.1 μC/cm2 and 299.7 kV/cm, respectively, under an applied field of 600 kV/cm. The Bi3.4Ce0.6Ti3O12 film did not show fatigue up to 4.46×109 switching cycles at a frequency of 1 MHz, and showed good insulating behavior according to the test of leakage current.
基金the Hubei Province Natural Science Foundation (Grant No. 2007ABA309)
文摘We have prepared the Ho-substituted bismuth titanate (Bi3.4Ho0.6Ti3O12, BHT) thin films on Pt/Ti/SiO2/Si substrates using sol-gel method. The crystal structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The BHT film shows a single phase of Bi-layered Aurivillius structure and dense microstructure. The 2Pr and 2Ec of the 600-nm-thick BHT film were 38.4 μC/cm2 and 376.1 kV/cm, respectively at applied electric field 500 kV/cm. The dielectric constant and dielectric loss are about 310 and 0.015 at a frequency of 1 MHz, respectively. The Pr value decreased to 93% of its pre-fatigue values after 4.46×109 switching cycles at 1 MHz frenquency, and the BHT film shows good in-sulating behavior according to the test of leakage current.
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China under grant No.50902108
文摘The （Bi0.9Ho0.1）3.999Ti2.997V0.003012 （BHTV） films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3＋/V5＋ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm （at applied field of 420 kV/cm）, dielectric constant of 305, dielectric loss of 0.031 （at 1 MHz）, good insulting behavior, as well as the fatigue-free behavior.
基金supported by the National Science Foundation under NSF-NIRT-0709293 and NSF-DMR-0934218the State of Texas through the ARP Program under 003656-0103-2007the Texas Center for Superconductivity at the University of Houston.
文摘Environment friendly ferroelectric relaxor Ba(Zr_(0.2)Ti_(0.8))O_(3)thin fims with the addition of 2%Mn dopant were grown on(001)MgO substrates by pulsed laser deposition.Microstructure studies with X-ray di®raction and transmission electron microscopy reveal that the as-grown Ba(Zr_(0.2)Ti_(0.8))O_(3) thin films are c-axis oriented with an atomic sharp interface.The films have good single crystallinity and good epitaxial quality.The interface relationship was determined to be[100]Mn.BZT//[100]MgO and(001)Mn.BZT//(001)MgO.Nanoscale order/disorder relaxor structures were found with nano-columnar structures.The microwave dielectric measurements(15-18GHz)indicate that the¯lms have excellent dielectric properties with large dielectric constant value,high tunability,and low dielectric loss,promising the development of room temperature tunable microwave elements.
