The microstructure and coupling between structural and magnetic domains of ferromagnetic shape memory alloy Ni55Mn20.6Ga24.4 were investigated by scanning electron acoustic microscopy (SEAM). Stripe ferroelastic dom...The microstructure and coupling between structural and magnetic domains of ferromagnetic shape memory alloy Ni55Mn20.6Ga24.4 were investigated by scanning electron acoustic microscopy (SEAM). Stripe ferroelastic domains (martensite variants) exist in every grain, and exhibit the configurations of the typical self-accommodation arrangement. Magnetic domain structure of Ni55Mn20.6Ga24.4 was observed by the Bitter method and magnetic force microscopy (MFM). Due to the unique subsurface imaging capability of SEAM, combined with the Bitter method, the ferroelastic domain structure can be compared with in situ ferromagnetic domain structure. It is found that the martensitic variant boundaries coincide well with the ferromagnetic domain walls, which is beneficial for the understanding of the correlation between two kinds of ferroic domains.展开更多
Multiferroics are novel classes of materials that exhibit cross-coupling of mutually excluding phenomena, i.e. magnetism and ferroelectricity. In recent years, the coexistence of ferroelectricity and magnetic ordering...Multiferroics are novel classes of materials that exhibit cross-coupling of mutually excluding phenomena, i.e. magnetism and ferroelectricity. In recent years, the coexistence of ferroelectricity and magnetic orderings has become a hot issue and drawn considerable attentions due to the promising applications to these days technology and the fundamental science involved in these classes of materials. The microscopic origins of magnetism and ferroelectricity differ fundamentally, while the real mechanism of ferroelectricity is still under debate. In the present work, we have started from a simple method Heisengerg hamiltonian and an interaction term resulting from electric field coupling with the magnetic spins with anisotropic limit, demonstrated that magnetization can be manipulated by electric field and anisotropic field in agreement with results experimentally observed. In the multiferroic thin film system the magnetic field tends to play a role in stabilizing the spins in preferred orientations and induces a coupling of magnetism and ferroelectricity that opens a route to switch magnetization with electric polarazation and vice-versa.展开更多
X-ray diffraction studies of synthesized Ba_(2)TiSi_(2)O_(8) have shown that this compound has a fresnoite structure and is characterized by a polar phase P4bm at room temperature.The synthesis of Pb_(2)TiSi_(2)O_(8) ...X-ray diffraction studies of synthesized Ba_(2)TiSi_(2)O_(8) have shown that this compound has a fresnoite structure and is characterized by a polar phase P4bm at room temperature.The synthesis of Pb_(2)TiSi_(2)O_(8) in the fresnoite phase under the selected synthesis conditions has led to the formation of a perovskite tetragonal phase P4mm corresponding to PbTiO_(3).展开更多
Two-dimensional(2D)ferromagnetic and ferroelectric materials attract unprecedented attention due to the spontaneous-symmetry-breaking induced novel properties and multifarious potential applications.Here we systematic...Two-dimensional(2D)ferromagnetic and ferroelectric materials attract unprecedented attention due to the spontaneous-symmetry-breaking induced novel properties and multifarious potential applications.Here we systematically investigate a large family(148)of 2D MGeX3(M=metal elements,X=O/S/Se/Te)by means of the high-throughput first-principles calculations,and focus on their possible ferroic properties including ferromagnetism,ferroelectricity,and ferroelasticity.We discover eight stable 2D ferromagnets including five semiconductors and three half-metals,212D antiferromagnets,and 11 stable 2D ferroelectric semiconductors including two multiferroic materials.Particularly,MnGeSe3 and MnGeTe3 are predicted to be room-temperature 2D ferromagnetic half metals with Tc of 490 and 308 K,respectively.It is probably for the first time that ferroelectricity is uncovered in 2D MGeX3 family,which derives from the spontaneous symmetry breaking induced by unexpected displacements of Ge-Ge atomic pairs,and we also reveal that the electric polarizations are in proportion to the ratio of electronegativity of X and M atoms,and IVB group metal elements are highly favored for 2D ferroelectricity.Magnetic tunnel junction and water-splitting photocatalyst based on 2D ferroic MGeX3 are proposed as examples of wide potential applications.The atlas of ferroicity in 2D MGeX3 materials will spur great interest in experimental studies and would lead to diverse applications.展开更多
基金Project(2009CB623305)supported by the National Basic Research Program of ChinaProject(50821004)supported by the Foundation for Innovative Research Groups of the National Natural Science Foundation of China
文摘The microstructure and coupling between structural and magnetic domains of ferromagnetic shape memory alloy Ni55Mn20.6Ga24.4 were investigated by scanning electron acoustic microscopy (SEAM). Stripe ferroelastic domains (martensite variants) exist in every grain, and exhibit the configurations of the typical self-accommodation arrangement. Magnetic domain structure of Ni55Mn20.6Ga24.4 was observed by the Bitter method and magnetic force microscopy (MFM). Due to the unique subsurface imaging capability of SEAM, combined with the Bitter method, the ferroelastic domain structure can be compared with in situ ferromagnetic domain structure. It is found that the martensitic variant boundaries coincide well with the ferromagnetic domain walls, which is beneficial for the understanding of the correlation between two kinds of ferroic domains.
文摘Multiferroics are novel classes of materials that exhibit cross-coupling of mutually excluding phenomena, i.e. magnetism and ferroelectricity. In recent years, the coexistence of ferroelectricity and magnetic orderings has become a hot issue and drawn considerable attentions due to the promising applications to these days technology and the fundamental science involved in these classes of materials. The microscopic origins of magnetism and ferroelectricity differ fundamentally, while the real mechanism of ferroelectricity is still under debate. In the present work, we have started from a simple method Heisengerg hamiltonian and an interaction term resulting from electric field coupling with the magnetic spins with anisotropic limit, demonstrated that magnetization can be manipulated by electric field and anisotropic field in agreement with results experimentally observed. In the multiferroic thin film system the magnetic field tends to play a role in stabilizing the spins in preferred orientations and induces a coupling of magnetism and ferroelectricity that opens a route to switch magnetization with electric polarazation and vice-versa.
基金supported by the Ministry of Science and Higher Education of the Russian Federation(State assignment in the field of scientific activity,Southern Federal University,2020).
文摘X-ray diffraction studies of synthesized Ba_(2)TiSi_(2)O_(8) have shown that this compound has a fresnoite structure and is characterized by a polar phase P4bm at room temperature.The synthesis of Pb_(2)TiSi_(2)O_(8) in the fresnoite phase under the selected synthesis conditions has led to the formation of a perovskite tetragonal phase P4mm corresponding to PbTiO_(3).
基金This work is supported in part by the National Key R&D Program of China(No.2018YFA0305800)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB28000000)+2 种基金the National Natural Science Foundation of China(No.11834014)the Beijing Municipal Science and Technology Commission(No.Z118100004218001)the fundamental research funds for the central universities,and University of Chinese Academy of Sciences.
文摘Two-dimensional(2D)ferromagnetic and ferroelectric materials attract unprecedented attention due to the spontaneous-symmetry-breaking induced novel properties and multifarious potential applications.Here we systematically investigate a large family(148)of 2D MGeX3(M=metal elements,X=O/S/Se/Te)by means of the high-throughput first-principles calculations,and focus on their possible ferroic properties including ferromagnetism,ferroelectricity,and ferroelasticity.We discover eight stable 2D ferromagnets including five semiconductors and three half-metals,212D antiferromagnets,and 11 stable 2D ferroelectric semiconductors including two multiferroic materials.Particularly,MnGeSe3 and MnGeTe3 are predicted to be room-temperature 2D ferromagnetic half metals with Tc of 490 and 308 K,respectively.It is probably for the first time that ferroelectricity is uncovered in 2D MGeX3 family,which derives from the spontaneous symmetry breaking induced by unexpected displacements of Ge-Ge atomic pairs,and we also reveal that the electric polarizations are in proportion to the ratio of electronegativity of X and M atoms,and IVB group metal elements are highly favored for 2D ferroelectricity.Magnetic tunnel junction and water-splitting photocatalyst based on 2D ferroic MGeX3 are proposed as examples of wide potential applications.The atlas of ferroicity in 2D MGeX3 materials will spur great interest in experimental studies and would lead to diverse applications.