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Effect of the mixing of s-wave and chiral p-wave pairings on electrical shot noise properties of normal metal/superconductor tunnel junctions
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作者 胡雨辰 胡梁宾 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第7期538-545,共8页
We study theoretically the electrical shot noise properties of tunnel junctions between a normal metal and a superconductor with the mixture of singlet s-wave and chiral triplet p-wave pairing due to broken inversion ... We study theoretically the electrical shot noise properties of tunnel junctions between a normal metal and a superconductor with the mixture of singlet s-wave and chiral triplet p-wave pairing due to broken inversion symmetry. We investigate how the shot noise properties vary as the relative amplitude between the two parity components in the pairing potential is changed. It is demonstrated that some characteristics of the electrical shot noise properties of such tunnel junctions may depend sensitively on the relative amplitude between the two parity components in the pairing potential, and some significant changes may occur in the electrical shot noise properties when the relative amplitude between the two parity components is varied from the singlet s-wave pairing dominated regime to the chiral triplet p-wave pairing dominated regime. In the chiral triplet p-wave pairing dominated regime, the ratio of noise power to electric current is close to 2e both in the in-gap and in the out-gap region. In the singlet s-wave pairing dominated regime, the value of this ratio is close to 4e in the inner gap region but may reduce to about 2e in the outer gap region as the relative amplitude of the chiral triplet pairing component is increased. The variations of the differential shot noise with the bias voltage also exhibit some significantly different features in different regimes. Such different features can serve as useful diagnostic tools for the determination of the relative magnitude of the two parity components in the pairing potential. 展开更多
关键词 normal metal/superconductor tunnel junctions shot noise mixing of s-wave and chiral p-wave pairing spin–orbit coupling
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正常金属调制层对超导隧道结微分电导的影响
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作者 李红 杨渭 +2 位作者 杨新建 秦明辉 徐一红 《中国石油大学学报(自然科学版)》 EI CAS CSCD 北大核心 2007年第2期143-147,共5页
在考虑绝缘层厚度的基础上,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,计算了含有正常金属调制层的铁磁金属/绝缘层/正常金属/s波超导隧道结(FINS结)中的准粒子输运系数和微分电导。计算结果表明,微... 在考虑绝缘层厚度的基础上,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,计算了含有正常金属调制层的铁磁金属/绝缘层/正常金属/s波超导隧道结(FINS结)中的准粒子输运系数和微分电导。计算结果表明,微分电导随正常金属调制层厚度的变化呈周期性振荡,振荡周期与外加偏压有关;当金属调制层厚度较薄时,邻近效应将导致在金属层中有铁磁性和超导性共存的可能性。 展开更多
关键词 FINS结 方势垒 交换能 微分电导 邻近效应
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