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Tunneling Conductance in Quantum-Wire/Ferromagnetic-Insulator/d-Wave Superconductor Junction
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作者 LI Xiao-Wei 《Communications in Theoretical Physics》 SCIE CAS CSCD 2008年第5期1345-1348,共4页
We have studied the quasiparticle transport in quantum-wire /ferromagnetic-insulator/d wave super- conductor Junction (q/FI/d) in the framework of the Blonder-Tinkham-Klapwijk model. We calculate the tunneling condu... We have studied the quasiparticle transport in quantum-wire /ferromagnetic-insulator/d wave super- conductor Junction (q/FI/d) in the framework of the Blonder-Tinkham-Klapwijk model. We calculate the tunneling conductance in q/FI/d as a function of the bias voltage at zero temperature and finite temperature based on Bogoliubov- de Gennes equations. Different from the case in normal-metal/insulator/d wave superconductor Junctions, the zero-bias conductance peaks vanish for the single-mode case. The tunneling conductance spectra depend on the magnitude of the exchange interaction at the ferromagnetic-insulator. 展开更多
关键词 quantum wire ferromagnetic insulator d-wave superconductor tunneling conductance
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dc Josephson Effect in s-Wave Superconductor/Ferromagnet Insulator/p-Wave Superconductor Junctions
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作者 LI Xiao-Wei 《Communications in Theoretical Physics》 SCIE CAS CSCD 2007年第4期737-740,共4页
The Josephson currents in s-wave superconductor/ferromagnet insulator/p-wave superconductor(s/FI/p) junctions are calculated as a function of temperature and the phase taking into account the roughness scattering ef... The Josephson currents in s-wave superconductor/ferromagnet insulator/p-wave superconductor(s/FI/p) junctions are calculated as a function of temperature and the phase taking into account the roughness scattering effect at interface. The phase dependence of the Josephson current I (φ) between s-wave and px-wave superconductor is predicted to be sin(2φ). The ferromagnet scattering effect, the barrier strength, and the roughness strength at interface suppress the dc currents in s/FI/p junction. 展开更多
关键词 ferromagnet insulator p-wave superconductor dc Josephson current
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Nonequilibrium Effect in Ferromagnet-Insulator-Superconductor Tunneling Junction Currents
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作者 Michihide Kitamura Kazuhiro Yamaki Akinobu Irie 《World Journal of Condensed Matter Physics》 CAS 2016年第3期169-176,共8页
Nonequilibrium effect due to the imbalance in the number of the ? and ? spin electrons has been studied for the tunneling currents in the ferromagnet-insulator-superconductor (FIS) tunneling junctions within a phenome... Nonequilibrium effect due to the imbalance in the number of the ? and ? spin electrons has been studied for the tunneling currents in the ferromagnet-insulator-superconductor (FIS) tunneling junctions within a phenomenological manner. It has been stated how the nonequilibrium effect should be observed in the spin-polarized quasiparticle tunneling currents, and pointed out that the detectable nonequilibrium effect could be found in the FIS tunneling junction at 77 K using HgBa2Ca2Cu3O8+? (Hg-1223) high-Tc superconductor rather than Bi2Sr2CaCu2O8+? (Bi-2212) one. 展开更多
关键词 Nonequilibrium Effect ferromagnet-insulator-superconductor Tunneling Junction Hg-1223 Bi-2212 Spin-Polarized Quasiparticle Tunneling
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Electric-field-controlled superconductor–ferromagnetic insulator transition 被引量:4
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作者 Likuan Ma Bin Lei +11 位作者 Naizhou Wang Kaishuai Yang Dayong Liu Fanbao Meng Chao Shang Zeliang Sun Jianhua Cui Changsheng Zhu Tao Wu Zhe Sun Liangjian Zou Xianhui Chen 《Science Bulletin》 SCIE EI CAS CSCD 2019年第10期653-658,共6页
Superconductivity beyond electron-phonon mechanism is always twisted with magnetism. Based on a new field-effect transistor with solid ion conductor as the gate dielectric(SIC-FET), we successfully achieve an electric... Superconductivity beyond electron-phonon mechanism is always twisted with magnetism. Based on a new field-effect transistor with solid ion conductor as the gate dielectric(SIC-FET), we successfully achieve an electric-field-controlled phase transition between superconductor and ferromagnetic insulator in(Li,Fe)OHFeSe. A dome-shaped superconducting phase with optimal T_c of 43K is continuously tuned into a ferromagnetic insulating phase, which exhibits an electric-field-controlled quantum critical behavior. The origin of the ferromagnetism is ascribed to the order of the interstitial Fe ions expelled from the(Li,Fe)OH layers by gating-controlled Li injection. These surprising findings offer a unique platform to study the relationship between superconductivity and ferromagnetism in Fe-based superconductors. This work also demonstrates the superior performance of the SIC-FET in regulating physical properties of layered unconventional superconductors. 展开更多
关键词 FeSe-based superconductorS ferromagnetic insulator Phase transition Solid ion conductor FIELD-EFFECT transistors (SIC-FET)
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Fermi level tuning in Sn_(1-x)Pb_(x)Te/Pb heterostructure via changing interface roughness
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作者 Tengteng Liu Zhaoxia Yi +8 位作者 Bangjin Xie Weiyan Zheng Dandan Guan Shiyong Wang Hao Zheng Canhua Liu Hao Yang Yaoyi Li Jinfeng Jia 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2024年第8期118-125,共8页
Superconducting SnTe-type topological crystalline insulators(TCIs)are predicted to host multiple Majorana zero modes(MZMs)which can coexist in a single vortex.Fermi level(FL)close to the Dirac points of topological su... Superconducting SnTe-type topological crystalline insulators(TCIs)are predicted to host multiple Majorana zero modes(MZMs)which can coexist in a single vortex.Fermi level(FL)close to the Dirac points of topological surface states is helpful for detecting MZMs.However,the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or alloying.In this work,we fabricate the atomically flat Sn_(1-x)Pb_(x)Te/Pb heterostructure by molecular beam epitaxy,and make the p-type Sn_(1-x)Pb_(x)Te become n-type through changing the interface roughness.Using scanning tunnelling microscope,we find the Dirac points of Sn_(1-x)Pb_(x)Te/Pb heterostructure are always above the FL due to the Fermi level pinning(FLP)induced by topological surface states at atomically flat interface.After increasing the interface roughness,the FLP effect is suppressed and then the Dirac points of p-type Sn_(1-x)Pb_(x)Te can be tuned very close to or even below the FL.Our work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device. 展开更多
关键词 topological crystalline insulator superconductor heterostructure Fermi level pinning interface roughness
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正常金属调制层对超导隧道结微分电导的影响
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作者 李红 杨渭 +2 位作者 杨新建 秦明辉 徐一红 《中国石油大学学报(自然科学版)》 EI CAS CSCD 北大核心 2007年第2期143-147,共5页
在考虑绝缘层厚度的基础上,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,计算了含有正常金属调制层的铁磁金属/绝缘层/正常金属/s波超导隧道结(FINS结)中的准粒子输运系数和微分电导。计算结果表明,微... 在考虑绝缘层厚度的基础上,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,计算了含有正常金属调制层的铁磁金属/绝缘层/正常金属/s波超导隧道结(FINS结)中的准粒子输运系数和微分电导。计算结果表明,微分电导随正常金属调制层厚度的变化呈周期性振荡,振荡周期与外加偏压有关;当金属调制层厚度较薄时,邻近效应将导致在金属层中有铁磁性和超导性共存的可能性。 展开更多
关键词 FINS结 方势垒 交换能 微分电导 邻近效应
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磁控溅射法生长Bi2Te3/CoFeB双层异质结太赫兹发射
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作者 张帆 许涌 +5 位作者 柳洋 程厚义 张晓强 杜寅昌 吴晓君 赵巍胜 《物理学报》 SCIE EI CAS CSCD 北大核心 2020年第20期76-81,共6页
自旋太赫兹源作为一种新型太赫兹辐射源,以其高效率、超宽带、低成本、易集成等优点已成为太赫兹科学与应用领域的研究热点.本实验报道了晶圆级磁控溅射生长的多晶拓扑绝缘体Bi2Te3和铁磁体CoFeB双层异质结纳米薄膜发射太赫兹电磁波,并... 自旋太赫兹源作为一种新型太赫兹辐射源,以其高效率、超宽带、低成本、易集成等优点已成为太赫兹科学与应用领域的研究热点.本实验报道了晶圆级磁控溅射生长的多晶拓扑绝缘体Bi2Te3和铁磁体CoFeB双层异质结纳米薄膜发射太赫兹电磁波,并对太赫兹辐射特性进行了深入而系统的实验研究.在飞秒激光放大级脉冲作用下,该异质结呈现出高效率的太赫兹发射,且辐射偏振可通过外加磁场方向控制.通过与Pt/CoFeB对比,研究发现Bi2Te3/CoFeB的发射性能与Pt/CoFeB双层异质结相当.实验还对生长在不同衬底上的Bi2Te3/CoFeB的发射性能进行了对比研究,发现MgO衬底上制备的样品具有相对较好的太赫兹辐射性能.本实验研究不仅对自旋太赫兹发射机理有更加深入的认识,而且通过样品和结构的优化,有望获得更高的发射效率,且该发射器具有大尺寸批量生长、成本较低的优势,具备商业化应用的潜力. 展开更多
关键词 太赫兹辐射 拓扑绝缘体/铁磁异质结 飞秒激光
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Molecular beam epitaxy of superconducting PdTe_2 films on topological insulator Bi_2Te_3 被引量:2
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作者 HuanYi Xue Hao Yang +7 位作者 YanFu Wu Gang Yao Dandan Guan ShiYong Wang Hao Zheng CanHua Liu YaoYi Li JinFeng Jia 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2019年第7期108-112,共5页
Majorana fermions have been observed in topological insulator/s-wave superconductor heterostructures. To manipulate Majorana fermions, superconducting materials should be deposited on the surfaces of topological insul... Majorana fermions have been observed in topological insulator/s-wave superconductor heterostructures. To manipulate Majorana fermions, superconducting materials should be deposited on the surfaces of topological insulators. In this study, highquality superconducting PdTe_2 films are deposited on the topological insulator Bi_2Te_3 surface using molecular beam epitaxy. The surface topography and electronic properties of PdTe_2/Bi_2Te_3 heterostructures are investigated via in situ scanning tunneling microscopy/spectroscopy. Under Te-rich conditions, the Pd atoms presumably form PdTe_2 film on Bi_2Te_3 surface rather than diffuse into Bi_2Te_3. The superconductivity of the PdTe_2/Bi_2Te_3 heterostructure is detected at a transition temperature of ~1.4 K using the two-coil mutual inductance technique. This study proposes a method for fabricating superconducting materials on topological insulator surfaces at low doping levels, paving ways for designing nanodevices that can manipulate Majorana fermions. 展开更多
关键词 TOPOLOGICAL insulator superconductor heterostructure molecular beam EPITAXY
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EuS/Ta异质结的极大磁电阻效应
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作者 芦佳 甘渝林 +1 位作者 颜雷 丁洪 《物理学报》 SCIE EI CAS CSCD 北大核心 2021年第4期327-332,共6页
在铁磁/超导异质结中,铁磁体的交换场通过近邻效应将导致超导体准粒子态密度的塞曼劈裂.基于该效应,在外磁场不强的情况下,通过外加磁场可以有效地调节铁磁/超导界面处的交换作用,从而实现超导体在正常态和超导态之间转换,产生极大磁电... 在铁磁/超导异质结中,铁磁体的交换场通过近邻效应将导致超导体准粒子态密度的塞曼劈裂.基于该效应,在外磁场不强的情况下,通过外加磁场可以有效地调节铁磁/超导界面处的交换作用,从而实现超导体在正常态和超导态之间转换,产生极大磁电阻.本文利用脉冲激光沉积方法制备了EuS/Ta异质结并研究了其电磁特性.Ta在3.6 K以下为超导态,EuS在20 K以下为铁磁态.在2 K时,EuS/Ta异质结中可观测蝴蝶型磁滞回线,证明在低磁场下(<±0.18 T)异质结中EuS铁磁态和Ta超导态共存.磁输运测试表明,通过施加外磁场可以有效调节EuS的交换场,随着交换场的增大,同时也加强了界面处的交换作用,从而抑制Ta的超导态,实现了Ta在超导态和正常态之间的转变,在EuS/Ta异质结中观测到了高达144000%的磁电阻.本文制备的EuS/Ta异质结具有极大磁电阻效应,在自旋电子学器件中有潜在的应用前景. 展开更多
关键词 铁磁绝缘体/超导异质结 交换场 磁电阻效应
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(SrVO_(3))_(5)/(SrTiO_(3))_(1)(111)异质结金属-绝缘体转变和磁性调控的第一性原理研究
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作者 房晓南 杜颜伶 +1 位作者 吴晨雨 刘静 《物理学报》 SCIE EI CAS CSCD 北大核心 2022年第18期302-313,共12页
(111)取向的钙钛矿异质结具有独特的六角蜂窝状双层结构,展现出丰富独特的物理现象,因而近年来得到越来越多的关注.本文利用第一性原理计算研究了(111)取向的(SrVO_(3))_(5)/(SrTiO_(3))_(1)异质结,计算结果表明该体系为半金属铁磁体.... (111)取向的钙钛矿异质结具有独特的六角蜂窝状双层结构,展现出丰富独特的物理现象,因而近年来得到越来越多的关注.本文利用第一性原理计算研究了(111)取向的(SrVO_(3))_(5)/(SrTiO_(3))_(1)异质结,计算结果表明该体系为半金属铁磁体.进一步的研究表明该体系的电、磁性质可以通过施加面内应变和界面元素掺杂进行调控:在4%的面内压缩应变到2%的面内拉伸应变范围内,该体系保持铁磁半金属性质,V 3d电子是体系半金属性的主要来源;当面内压缩应变增加到8%或面内拉伸应变增加到4%时,该体系的基态变为反铁磁绝缘体;通过异质结界面处Ti-V阳离子的混合掺杂,该体系可以实现从铁磁半金属向铁磁绝缘体的转变.本文的研究结果表明,该体系在自旋电子学领域具有很高的应用潜力,本文研究为利用(SrVO_(3))_(5)/(SrTiO_(3))_(1)(111)异质结探索量子相变提供了理论参考. 展开更多
关键词 异质结 面内应变 金属-绝缘体转变 半金属铁磁体
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