The spin-valley Hall conductivity（SHC-VHC） of two-dimensional material ferromagnetic graphene＇s silicon analog,silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kan...The spin-valley Hall conductivity（SHC-VHC） of two-dimensional material ferromagnetic graphene＇s silicon analog,silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kane–Mele Hamiltonian.The Dirac cone approximation has been used to investigate the dynamics of carriers under the strain along the armchair（AC） direction. In particular, we study the effect of external static electric field on these conductivities under the strain.In the presence of the strain, the carriers have a larger effective mass and the transport decreases. Our findings show that SHC changes with respect to the direction of the applied electric field symmetrically while VHC increases independently.Furthermore, the reflection symmetry of the structure has been broken with the electric field and a phase transition occurs to topological insulator for strained ferromagnetic silicene. A critical strain is found in the presence of the electric field around 45%. SHC（VHC） decreases（increases） for strains smaller than this value symmetrically while it increases（decreases） for strains larger than one.展开更多
We address velocity-modulation control of electron wave propagation in a normal/ferromagnetic/normal silicene junc- tion with local variation of Fermi velocity, where the properties of charge, valley, and spin transpo...We address velocity-modulation control of electron wave propagation in a normal/ferromagnetic/normal silicene junc- tion with local variation of Fermi velocity, where the properties of charge, valley, and spin transport through the junction are investigated. By matching the wavefunctions at the normal-ferromagnetic interfaces, it is demonstrated that the variation of Fermi velocity in a small range can largely enhance the total conductance while keeping the current nearly fully valley- and spin-polarized. Further, the variation of Fermi velocity in ferromagnetic silicene has significant influence on the valley and spin polarization, especially in the low-energy regime. It may drastically reduce the high polarizations, which can be realized by adjusting the local application of a gate voltage and exchange field on the junction.展开更多
文摘The spin-valley Hall conductivity（SHC-VHC） of two-dimensional material ferromagnetic graphene＇s silicon analog,silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kane–Mele Hamiltonian.The Dirac cone approximation has been used to investigate the dynamics of carriers under the strain along the armchair（AC） direction. In particular, we study the effect of external static electric field on these conductivities under the strain.In the presence of the strain, the carriers have a larger effective mass and the transport decreases. Our findings show that SHC changes with respect to the direction of the applied electric field symmetrically while VHC increases independently.Furthermore, the reflection symmetry of the structure has been broken with the electric field and a phase transition occurs to topological insulator for strained ferromagnetic silicene. A critical strain is found in the presence of the electric field around 45%. SHC（VHC） decreases（increases） for strains smaller than this value symmetrically while it increases（decreases） for strains larger than one.
基金Project supported by the National Natural Science Foundation of China(Grant No.11274108)
文摘We address velocity-modulation control of electron wave propagation in a normal/ferromagnetic/normal silicene junc- tion with local variation of Fermi velocity, where the properties of charge, valley, and spin transport through the junction are investigated. By matching the wavefunctions at the normal-ferromagnetic interfaces, it is demonstrated that the variation of Fermi velocity in a small range can largely enhance the total conductance while keeping the current nearly fully valley- and spin-polarized. Further, the variation of Fermi velocity in ferromagnetic silicene has significant influence on the valley and spin polarization, especially in the low-energy regime. It may drastically reduce the high polarizations, which can be realized by adjusting the local application of a gate voltage and exchange field on the junction.
