Degradation of ferroelectric and weak ferromagnetic properties of BiFeO_3 films due to the diffusion of silicon atoms

Crystalline BiFeO3 （BFO） films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction （XRD） and high-resolution electron microscopy （HRTEM）. The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry （RBS）. The element analysis is per- formed by energy dispersive X-ray spectroscopy （EDS）. Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy （XPS） indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 upto7.1 × 10^-4 A/cm-2.

Enhanced ferroelectricity and ferromagnetism in Bi_(0.9)Ba_(0.1)FeO_3/La_(2/3)Sr_(1/3)MnO_3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.

Epitaxial lift-off of ferromagnetic (Ga,Mn) As nanoflakes for van der Waals heterostructures

The recent discovery of two-dimensional (2D) van der Waals (vdWs) ferromagnetic crystals provides an ideal platform for fundamental understanding of 2D magnetism, as well as the applications of low-power spintronic devices. The advances of vdWs heterostructures can couple the quasiparticle interaction between the 2D ferromagnetic material and others with engineered strain, chemistry, optical and electrical properties, providing an additional route to realize conceptual quantum phenomena and novel device functionalities.

Deformable Permanent Ferroelectric or Ferromagnetic Media

In the framework of continuum mechanics, one of possible consistent definitions of deformable permanent magnets is introduced and explored. Similar model can be used for ferroelectric substances. Based on the suggested definition, we establish the key kinematic relationship for the deformable permanent magnet and suggest the simplest master system, allowing to analyze behavior of such substances.

Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water‑Etching and Transfer Process

Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering.In recent years,lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations.Moreover,twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures.A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process,which could provide some insight in to the physical phenomena.In this work,the La_(0.67)Sr_(0.33)MnO_(3)(001)/0.7Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.3PbTiO_(3)(011)(LSMO/PMN-PT)heterostructures with 45.and 0.twist angles were assembled via water-etching and transfer process.The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO<110>.A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO[110]easy axis is observed for the 45°Sample by applying a 7.2 kV cm^(−1)electrical field,significantly different from a uniaxial anisotropy with LSMO[100]easy axis for the 0°Sample.The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45°twist angle causes different lattice distortion of LSMO,thereby enhancing both the fourfold and uniaxial anisotropy.This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.

Ferroelectric polarization-enhanced photocatalytic performance of heterostructured BaTiO_(3)@TiO_(2) via interface engineering

A catalyst of ferroelectric-BaTiO_(3)@photoelectric-TiO_(2) nanohybrids(BaTiO_(3)@TiO_(2))with enhanced photocatalytic activity was synthesized via a hydrolysis precipitation combined with a hydrothermal approach.Compared to pure TiO_(2),pure BaTiO_(3) and BaTiO_(3)/TiO_(2) physical mixture,the heterostructured BaTiO_(3)@TiO_(2) exhibits significantly improved photocatalytic activity and cycling stability in decomposing Rhodamine B(RhB)and the degradation efficiency is 1.7 times higher than pure TiO_(2) and 7.2 times higher than pure BaTiO_(3).These results are mainly attributed to the synergy effect of photoelectric TiO_(2),ferroelectric-BaTiO_(3) and the rationally designed interfacial structure.The mesoporous microstructure of TiO_(2) is of a high specific area and enables excellent photocatalytic activity.The ferroelectric polarization induced built-in electric field in BaTiO_(3) nanoparticles,and the intimate interfacial interactions at the interface of BaTiO_(3) and TiO_(2) are effective in driving the separation and transport of photogenerated charge carriers.This strategy will stimulate the design of heterostructured photocatalysts with outstanding photocatalytic performance via interface engineering.

Strain drived band aligment transition of the ferromagnetic VS_(2)/C_(3)N van der Waals heterostructure

Exploring two-dimensional(2D)magnetic heterostructures is essential for future spintronic and optoelectronic devices.Herein,using first-principle calculations,stable ferromagnetic ordering and colorful electronic properties are established by constructing the VS_(2)/C_(3)N van der Waals(vdW)heterostructure.Unlike the semiconductive properties with indirect band gaps in both the VS2 and C3N monolayers,our results indicate that a direct band gap with type-Ⅱband alignment and p-doping characters are realized in the spin-up channel of the VS_(2)/C_(3)N heterostructure,and a typical type-Ⅲband alignment with a broken-gap in the spin-down channel.Furthermore,the band alignments in the two spin channels can be effectively tuned by applying tensile strain.An interchangement between the type-Ⅱand type-Ⅲband alignments occurs in the two spin channels,as the tensile strain increases to 4%.The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.

The coexistence of ferroelectricity and ferromagnetism in Mn-doped BaTiO_3 thin films

5-at% Mn-doped and undoped BaTiO3 thin films have been grown under different oxygen partial pressures by Pulsed Laser Deposition （PLD） on platinum-coated sapphire substrates. X-ray diffraction （XRD） measurements for all the thin films reveal a similar polycrystalline single-phase perovskite structure. Ferroelectricity is observed in the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Ferromagnetic coupling of the Mn dopant ions, on the other hand, is only seen in Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure in a wide temperature range from 5 K to 300 K, and is attributed to the enhanced exchange coupling between Mn dopants and electrons at oxygen vacancies. Our results show that the leakage current is decreased with the doped Mn, but increases the dielectric loss and decreases the dielectric constant, and the ferroelectricity is impaired. To produce ferromagnetism, oxygen vacancies are necessary, which unfortunately increase the leakage current. This confirms that the mutual interplay between the ferroelectricity and ferromagnetism can be tuned by exchange coupling of the doped-Mn and oxygen vacancies in the BaTiO3 thin films.

Magnetic and ferroelectric properties of Zn and Mn co-doped BaTiO_3

This paper reports an approach to obtaining multiferroic properties in co-doped （Zn：Mn） BaTiO3 near room temper- ature. Interestingly, an unusual magnetic hysteresis loop is observed in the co-doped compositions in which the central portion of the loop is squeezed. However, in the composition Bao.9Zno.lTio.9Mno.lO3, a broad magnetic hysteresis loop is observed. Such a magnetic effect is attributed to the coexistence of antiferromagnetic and ferromagnetic exchange in- teractions in the system. The observation of the above type of magnetic properties is likely to be due to the presence of exchange interactions between Mn ions. A lossy-type of ferroelectric hysteresis loop is also observed in co-doped ceramic compositions near room temperature.

Observation of magnetoresistance in CrI_(3)/graphene van der Waals heterostructures

Two-dimensional ferromagnetic van der Waals(2D vdW)heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials,and for manipulating spin degree of freedom at the limit of few atomic layers,which empower next-generation spintronic and memory devices.However,to date,the electronic properties of 2D ferromagnetic heterostructures still remain elusive.Here,we report an unambiguous magnetoresistance behavior in CrI_(3)/graphene heterostructures,with a maximum magnetoresistance ratio of 2.8%.The magnetoresistance increases with increasing magnetic field,which leads to decreasing carrier densities through Lorentz force,and decreases with the increase of the bias voltage.This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.

Visualizing interface states in In_(2)Se_(3)–WSe_(2)monolayer lateral heterostructures

Recent findings of two-dimensional(2D)ferroelectric(FE)materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness.In this paper,we report the in-situ fabrication and probing of electronic structures of In_(2)Se_(3)–WSe_(2) lateral heterostructures,compared with most vertical FE heterostructures at present.Through molecular beam epitaxy,we fabricated lateral heterostructures with monolayer WSe_2(three atomic layers)and monolayer In_(2)Se_(3)(five atomic layers).Type-Ⅱband alignment was found to exist in either the lateral heterostructure composed of anti-FEβ′-In_(2)Se_(3) and WSe_(2) or the lateral heterostructure composed of FEβ*-In_(2)Se_(3)and WSe_2,and the band offsets could be modulated by ferroelectric polarization.More interestingly,interface states in both lateral heterostructures acted as narrow gap quantum wires,and the band gap of the interface state in theβ*-In_(2)Se_(3)–WSe_(2)heterostructure was smaller than that in theβ′-In_(2)Se_(3)heterostructure.The fabrication of 2D FE heterostructure and the modulation of interface state provide a new platform for the development of FE devices.

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor devices.Here,we rationally design a tri-gate two-dimensional(2D)ferroelectric van der Waals heterostructures device based on copper indium thiophosphate(CuInP_(2)S_(6))and few layers tungsten disulfide(WS_(2)),and demonstrate its multi-functional applications in multi-valued state of data,non-volatile storage,and logic operation.By co-regulating the input signals across the tri-gate,we show that the device can switch functions flexibly at a low supply voltage of 6 V,giving rise to an ultra-high current switching ratio of 107 and a low subthreshold swing of 53.9 mV/dec.These findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.

Ferromagnetic and ferroelectric two-dimensional materials for memory application

The discoveries of ferromagnetic and ferroelectric two-dimensional(2D)materials have dramatically inspired intense interests due to their potential in the field of spintronic and nonvolatile memories.This review focuses on the latest 2D ferromagnetic and ferroelectric materials that have been most recently studied,including insulating ferromagnetic,metallic ferromagnetic,antiferromagnetic and ferroelectric 2D materials.The fundamental properties that lead to the long-range magnetic orders of 2D materials are discussed.The low Curie temperature(Tc)and instability in 2D systems limits their use in practical applications,and several strategies to address this constraint are proposed,such as gating and composition stoichiometry.A van der Waals(vdW)heterostructure comprising 2D ferromagnetic and ferroelectric materials will open a door to exploring exotic physical phenomena and achieve multifunctional or nonvolatile devices.

Broadband ferromagnetic resonance studies on influence of interface bonding on magnetoeletric effects in ferrit e-ferroelectric composites

A systematic study has been carried out on the effects of interface bonding on the strain mediated magnetoelectric （ME） coupling in ferromagnetic-ferroelectric bilayers. The technique used involves the static electric field E tuning of the ferromagnetic resonance （FMR） in yttrium iron garnet （YIG） and lead zirconate titanate （PZT） or lead magnesium niobate-lead titanate （PMN-PT）. A broad band detection technique has been developed for studies over 1 40 GHz in three types of bilayers： epoxy bonded, eutectic bonded and YIG films directly grown onto piezoelectric substrate by electrophoretic deposition. The strength A of the converse ME effect （CME） defined as the ratio of the frequency shift 8f in FMR in E, A = 8f/E, varies over the range 0.8 to 4.3 MHz.cm/kV, and is the highest for eutectic bonded samples and is the weakest for epoxy bonded bilayers. The results presented here as of importance for dual electric and magnetic field tunable ferrite ferroelectric microwave resonators and filters.

Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional(2D) subthermionic field-effect transistors(FETs) with sub-5 nm gate lengths based on ferroelectric(FE) van der Waals heterostructures(vdWHs).The FE vd WHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices.

The atlas of ferroicity in two-dimensional MGeX_(3) family:Room-temperature ferromagnetic half metals and unexpected ferroelectricity and ferroelasticity

Two-dimensional(2D)ferromagnetic and ferroelectric materials attract unprecedented attention due to the spontaneous-symmetry-breaking induced novel properties and multifarious potential applications.Here we systematically investigate a large family(148)of 2D MGeX3(M=metal elements,X=O/S/Se/Te)by means of the high-throughput first-principles calculations,and focus on their possible ferroic properties including ferromagnetism,ferroelectricity,and ferroelasticity.We discover eight stable 2D ferromagnets including five semiconductors and three half-metals,212D antiferromagnets,and 11 stable 2D ferroelectric semiconductors including two multiferroic materials.Particularly,MnGeSe3 and MnGeTe3 are predicted to be room-temperature 2D ferromagnetic half metals with Tc of 490 and 308 K,respectively.It is probably for the first time that ferroelectricity is uncovered in 2D MGeX3 family,which derives from the spontaneous symmetry breaking induced by unexpected displacements of Ge-Ge atomic pairs,and we also reveal that the electric polarizations are in proportion to the ratio of electronegativity of X and M atoms,and IVB group metal elements are highly favored for 2D ferroelectricity.Magnetic tunnel junction and water-splitting photocatalyst based on 2D ferroic MGeX3 are proposed as examples of wide potential applications.The atlas of ferroicity in 2D MGeX3 materials will spur great interest in experimental studies and would lead to diverse applications.

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Subject Code:F04 With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Wang Kaiyou(王开友)from the Institute of Semiconductors,Chinese Academy of Sciences demonstrates all-electric and programmable manipulations of ferromagnetic bits without external

Ferromagnetic and ferroelectric properties of Aurivillius phase Bi_9Fe_(4.7)Me_(0.3)Ti_3O_(27)(Me 5 Fe, Co, Ni, Mn)

New Aurivillius phase Bi9Fe4.7Me0.3Ti3O27(Me = Fe, Co, Ni, Mn) oxides have been prepared using a citrate combustion method. X-ray diffraction on powders and high-resolution transmission electron microscopy investigation confirmed that the Bi9Fe4.7Me0.3Ti3O27 samples are with an eight-layer structure. Both ferromagnetic and ferroelectric investigations suggested that Co or Ni substitution could enhance their multiferroic properties,while Mn substitution depressed them. Among all the samples, Bi9Fe4.7Co0.3Ti3O27 sample exhibits the largest remnant polarization of Pr*3.8 l C/cm2, and the largest remnant magnetization of Mr*0.06 lB/f.u. with a Curie temperature about 764 K, while the Bi9Fe4.7Ni0.3Ti3O27 sample has the largest spontaneous magnetization(0.26 lB/f.u.). The improved ferromagnetic properties ofboth Bi9Fe4.7Co0.3Ti3O27 and Bi9Fe4.7Ni0.3Ti3O27 can be ascribed to the spin canting of magnetic ion-based sublattices via the Dzyaloshinskii–Moriya interaction and also the magnetic ions exchanging interactions(Fe3–O–Co3or Fe3–O–Ni3).

Ferromagnetism and ferroelectricity in a superlattice of antiferromagnetic perovskite oxides without ferroelectric polarization

We study the structural,electronic,and magnetic properties of the SrCrO_(3)/YCrO_(3) superlattice and their dependence on epitaxial strain.We discover that the superlattice adopts A-type antiferromagnetic(A-AFM)ordering in contrast to its constituents(SrCrO_(3):C-AFM;YCrO_(3):G-AFM)and retains it under compressive strain while becoming ferromagnetic(5μB per formula unit)at+1%strain.The obtained ferroelectric polarization is significantly higher than that of the R2NiMnO6/La2NiMnO6(R=Ce to Er)series of superlattices[Nat.Commun.5,4021(2014)]due to a large difference between the antipolar displacements of the Sr and Y cations.The superlattice is a hybrid-improper multiferroic material with a spontaneous ferroelectric polarization(13.5μC/cm^(2))approaching that of bulk BaTiO_(3)(19μC/cm^(2)).The combination of ferromagnetism with ferroelectricity enables multistate memory applications.In addition,the charge-order-driven p-type semiconducting state of the ferromagnetic phase(despite the metallic nature of SrCrO_(3))is a rare property and interesting for spintronics.Monte Carlo simulations demonstrate a magnetic critical temperature of 90 K for the A-AFM phase without strain and of 115 K for the ferromagnetic phase at+5%strain,for example.

Reversal of the magnetoelectric effect at a ferromagnetic metal/ferroelectric interface induced by metal oxidation

Multiferroic materials composed of ferromagnetic and ferroelectric components are interesting for technological applications due to sizable magnetoelectric coupling allowing the control of magnetic properties by electric fields.Due to being compatible with the silicon-based technology,HfO2-based ferroelectrics could serve as a promising component in the composite multiferroics.Recently,a strong charge-mediated magnetoelectric coupling has been predicted for a Ni/HfO_(2) multiferroic heterostructure.Here,using density functional theory calculations,we systematically study the effects of the interfacial oxygen stoichiometry relevant to experiments on the magnetoelectric effect at the Ni/HfO_(2) interface.We demonstrate that the magnetoelectric effect is very sensitive to the interface stoichiometry and is reversed if an oxidized Ni monolayer is formed at the interface.The reversal of the magnetoelectric effect is driven by a strong Ni−O bonding producing exchange-split polarization-sensitive antibonding states at the Fermi energy.We argue that the predicted reversal of the magnetoelectric effect is typical for other 3d ferromagnetic metals,such as Co and Fe,where the metal-oxide antibonding states have an opposite spin polarization compared to that in the pristine ferromagnetic metals.Our results provide an important insight into the mechanism of the interfacial magnetoelectric coupling,which is essential for the physics and application of multiferroic heterostructures.