The RF electric field penetration and the power deposition into planar-type inductively coupled plasmas in low-pressure discharges have been studied by means of a self-consistent model which consists of Maxwell equati...The RF electric field penetration and the power deposition into planar-type inductively coupled plasmas in low-pressure discharges have been studied by means of a self-consistent model which consists of Maxwell equations combined with the kinetic equation of electrons. The Maxwell equations are solved based on the expansion of the Fourier-Bessel series for determining the RF electric field. Numerical results show the influence of a non-Maxwellian electron energy distribution on the RF electric field penetration and the power deposition for different coil currents. Moreover, the two-dimensional spatial profiles of RF electric field and power density are also shown for different numbers of RF coil turns.展开更多
Based on calculating the influence of RF-field with various physical parameters on the dynamics of the spin 1/2 system,it was found that the spin state could be changed up and down by choosing appropriate RF pulses, a...Based on calculating the influence of RF-field with various physical parameters on the dynamics of the spin 1/2 system,it was found that the spin state could be changed up and down by choosing appropriate RF pulses, and the coherent control of the RF pulses could substantially modify the behavior of spin dynamics:quicker change of two states could be produced even for small pulse duration.In addition,the oscillatory structures around the resonant frequency and the propagation features of the pulses depend on the relative phase of the bichromatic RF pulses.展开更多
A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics ...A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.展开更多
中国散裂中子源研发了一台射频四极RFQ(Radio Frequency Quadrupole)强流质子加速器。为保证RFQ顺利出束,对加工焊接阶段、RF调谐调场、高功率RF(Radio Frequency)老练过程中出现的问题进行了分析,给出了解决办法,并进行了调束实验。三...中国散裂中子源研发了一台射频四极RFQ(Radio Frequency Quadrupole)强流质子加速器。为保证RFQ顺利出束,对加工焊接阶段、RF调谐调场、高功率RF(Radio Frequency)老练过程中出现的问题进行了分析,给出了解决办法,并进行了调束实验。三坐标测量测得RFQ精加工后的加工公差约在20μm,RFQ腔体无载品质因子Q0大于7 679,约为理论无载Q0值的80%。RFQ腔内RF电场分布的平整度好于2.5%,RFQ高功率RF老练入腔功率达到450 k W,是理论腔耗390 k W的1.15倍,且保持连续12 h不打火。在RFQ调束实验中,RFQ出口得到3 Me V、28 m A的负氢束流,满足中国散裂中子源的要求。展开更多
We utilize an electromagnetically induced transparency(EIT) of a three-level cascade system involving Rydberg state in a room-temperature cell, formed with a cesium 6 S_(1/2)–6 P_(3/2)–66 S_(1/2) scheme, to investig...We utilize an electromagnetically induced transparency(EIT) of a three-level cascade system involving Rydberg state in a room-temperature cell, formed with a cesium 6 S_(1/2)–6 P_(3/2)–66 S_(1/2) scheme, to investigate the Autler–Townes(AT)splitting resulting from a 15.21-GHz radio-frequency(RF) field that couples the |66 S_(1/2) → |65 P_(1/2) Rydberg transition.The radio-frequency electric field induced AT splitting, γAT, is defined as the peak-to-peak distance of an EIT-AT spectrum.The dependence of AT splitting γAT on the probe and coupling Rabi frequency, ?_p and ?_c, is investigated. It is found that the EIT-AT splitting strongly depends on the EIT linewidth that is related to the probe and coupling Rabi frequency in a weak RF-field regime. Using a narrow linewidth EIT spectrum would decrease the uncertainty of the RF field measurements.This work provides new experimental evidence for the theoretical framework in [J. Appl. Phys. 121, 233106(2017)].展开更多
The study was performed on neurons with direction selective (DS) receptive fields (RFs) in the primary visual cortex of the cat. Preferred directions (PDs) of these cells to a single light spot and a system of two ide...The study was performed on neurons with direction selective (DS) receptive fields (RFs) in the primary visual cortex of the cat. Preferred directions (PDs) of these cells to a single light spot and a system of two identical light spots moving across the RF with a given angle between them were compared. Directional interactions appeared when the angles between the directions of the two moving spots were 30o or 60o. PD for 56% of the cells coincided with bisectors of these angles. These cells responded to a combination of the two moving stimuli as if only one stimulus moved in the RF in an intermediate direction. This direction coincided with PD of the DS neuron to a single spot. Also, the investigation revealed that DS neurons responded to stimuli moving at such angles as 180o (to preferred and opposite directions simultaneously). In the further experiment we investigated responses of the DS cells in the primary visual cortex of RF. The angle between the directions of the two moving spots was 60o. These cells responded to a combination of the two moving stimuli as if only one stimulus moved in RF in an intermediate direction. The more relative luminance of one of spots in pair was, the closer the intermediate direction approached to the direction of this spot).展开更多
An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due ...An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due to stretching of beam,and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model.A semi- analytical method is developed to calculate the behavior of the RF MEMS switches.Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared,and the corresponding analysis with the dimensionless numbers is conducted too.The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.展开更多
The 500 MHz 5-cell superconducting RF(SRF) cavity was designed aiming to be a candidate cavity for high current accelerators. A copper prototype cavity and a niobium cavity were fabricated at SINAP in 2012. In order t...The 500 MHz 5-cell superconducting RF(SRF) cavity was designed aiming to be a candidate cavity for high current accelerators. A copper prototype cavity and a niobium cavity were fabricated at SINAP in 2012. In order to ensure these cavities get the desired frequency and a good field flatness higher than 98%, frequency control was implemented in the manufacturing process and pre-tuning has been done using a simple pre-tuning frame based on the bead-pull pre-tuning method. Then, TM010-π mode frequency within 5 kHz from the target frequency was achieved and the field flatness reached 98.9% on the copper prototype cavity. Finally, the same procedure was applied to the niobium cavity to obtain a field flatness better than 98% which benefited the cavity performance in the vertical testing.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10376003 and 10572035）.
文摘The RF electric field penetration and the power deposition into planar-type inductively coupled plasmas in low-pressure discharges have been studied by means of a self-consistent model which consists of Maxwell equations combined with the kinetic equation of electrons. The Maxwell equations are solved based on the expansion of the Fourier-Bessel series for determining the RF electric field. Numerical results show the influence of a non-Maxwellian electron energy distribution on the RF electric field penetration and the power deposition for different coil currents. Moreover, the two-dimensional spatial profiles of RF electric field and power density are also shown for different numbers of RF coil turns.
文摘Based on calculating the influence of RF-field with various physical parameters on the dynamics of the spin 1/2 system,it was found that the spin state could be changed up and down by choosing appropriate RF pulses, and the coherent control of the RF pulses could substantially modify the behavior of spin dynamics:quicker change of two states could be produced even for small pulse duration.In addition,the oscillatory structures around the resonant frequency and the propagation features of the pulses depend on the relative phase of the bichromatic RF pulses.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61306116 and 61472322)
文摘A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.
文摘中国散裂中子源研发了一台射频四极RFQ(Radio Frequency Quadrupole)强流质子加速器。为保证RFQ顺利出束,对加工焊接阶段、RF调谐调场、高功率RF(Radio Frequency)老练过程中出现的问题进行了分析,给出了解决办法,并进行了调束实验。三坐标测量测得RFQ精加工后的加工公差约在20μm,RFQ腔体无载品质因子Q0大于7 679,约为理论无载Q0值的80%。RFQ腔内RF电场分布的平整度好于2.5%,RFQ高功率RF老练入腔功率达到450 k W,是理论腔耗390 k W的1.15倍,且保持连续12 h不打火。在RFQ调束实验中,RFQ出口得到3 Me V、28 m A的负氢束流,满足中国散裂中子源的要求。
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0304203)the National Natural Science Foundation of China(Grant Nos.61475090,61675123,61775124,and 11804202)+1 种基金the State Key Program of National Natural Science of China(Grant Nos.11434007 and61835007)the Changjiang Scholars and Innovative Research Team in University of Ministry of Education of China(Grant No.IRT13076)
文摘We utilize an electromagnetically induced transparency(EIT) of a three-level cascade system involving Rydberg state in a room-temperature cell, formed with a cesium 6 S_(1/2)–6 P_(3/2)–66 S_(1/2) scheme, to investigate the Autler–Townes(AT)splitting resulting from a 15.21-GHz radio-frequency(RF) field that couples the |66 S_(1/2) → |65 P_(1/2) Rydberg transition.The radio-frequency electric field induced AT splitting, γAT, is defined as the peak-to-peak distance of an EIT-AT spectrum.The dependence of AT splitting γAT on the probe and coupling Rabi frequency, ?_p and ?_c, is investigated. It is found that the EIT-AT splitting strongly depends on the EIT linewidth that is related to the probe and coupling Rabi frequency in a weak RF-field regime. Using a narrow linewidth EIT spectrum would decrease the uncertainty of the RF field measurements.This work provides new experimental evidence for the theoretical framework in [J. Appl. Phys. 121, 233106(2017)].
文摘The study was performed on neurons with direction selective (DS) receptive fields (RFs) in the primary visual cortex of the cat. Preferred directions (PDs) of these cells to a single light spot and a system of two identical light spots moving across the RF with a given angle between them were compared. Directional interactions appeared when the angles between the directions of the two moving spots were 30o or 60o. PD for 56% of the cells coincided with bisectors of these angles. These cells responded to a combination of the two moving stimuli as if only one stimulus moved in the RF in an intermediate direction. This direction coincided with PD of the DS neuron to a single spot. Also, the investigation revealed that DS neurons responded to stimuli moving at such angles as 180o (to preferred and opposite directions simultaneously). In the further experiment we investigated responses of the DS cells in the primary visual cortex of RF. The angle between the directions of the two moving spots was 60o. These cells responded to a combination of the two moving stimuli as if only one stimulus moved in RF in an intermediate direction. The more relative luminance of one of spots in pair was, the closer the intermediate direction approached to the direction of this spot).
基金The project supported by the National Natural Science Foundation of China,the Chinese Academy of Sciences,the RGC/NSFC Joint Research Scheme (N-HKUST 601/01)the Joint Laboratory of Microsystems
文摘An improved electromechanical model of the RF MEMS(radio frequency microelec- tromechanical systems)switches is introduced,in which the effects of intrinsic residual stress from fabrication processes,axial stress due to stretching of beam,and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model.A semi- analytical method is developed to calculate the behavior of the RF MEMS switches.Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared,and the corresponding analysis with the dimensionless numbers is conducted too.The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.
文摘The 500 MHz 5-cell superconducting RF(SRF) cavity was designed aiming to be a candidate cavity for high current accelerators. A copper prototype cavity and a niobium cavity were fabricated at SINAP in 2012. In order to ensure these cavities get the desired frequency and a good field flatness higher than 98%, frequency control was implemented in the manufacturing process and pre-tuning has been done using a simple pre-tuning frame based on the bead-pull pre-tuning method. Then, TM010-π mode frequency within 5 kHz from the target frequency was achieved and the field flatness reached 98.9% on the copper prototype cavity. Finally, the same procedure was applied to the niobium cavity to obtain a field flatness better than 98% which benefited the cavity performance in the vertical testing.
