We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor ...We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.展开更多
We present a digital micromirror device（DMD） based superpixel method for focusing light through scattering media by modulating the complex field of incident light. Firstly, we numerically and experimentally investig...We present a digital micromirror device（DMD） based superpixel method for focusing light through scattering media by modulating the complex field of incident light. Firstly, we numerically and experimentally investigate focusing light through a scattering sample using the superpixel methods with different target complex fields.Then, single-point and multiple-point focusing experiments are performed using this superpixel-based complex modulation method. In our experiment, up to 71.5% relative enhancement is realized. The use of the DMDbased superpixel method for the control of the complex field of incident light opens an avenue to improve the enhancement of focusing light through scattering media.展开更多
Objective To test a quality assurance(QA)DVS solution-DVS based on a linac electronic field imaging device(EPID)and evaluate its accuracy and ease of use.Methods All of the QA items that do not require the dedicated Q...Objective To test a quality assurance(QA)DVS solution-DVS based on a linac electronic field imaging device(EPID)and evaluate its accuracy and ease of use.Methods All of the QA items that do not require the dedicated QA phantom in the DVS solution were tested.Test methods were chosen based on the test items:for the collimator rotation center,the coincidence of the radiation and mechanical,mechanical flatness/symmetry and MLC transmission were compared with the existing QA solution;for the leaf position accuracy and repeatability,the original preset beam fields and fields adjusted by 1 mm were compared.Results The collimator rotation center by the DVS solution is similar to the existing solution.For coincidence of radiation and mechanical,the DVS solution provides more data,including 3D distance.For the flatness/symmetry property,the DVS solution can display more graphics,but the overall data is less than the ion-chamber matrix solution.The DVS solution can directly obtain the MLC transmission value and quickly and intuitively measure the position accuracy of the MLC.However,the repeatability is slightly worse.Conclusion The DVS solution can improve the QA work efficiency and reduce workload,and there are more opportunities for improvement.展开更多
We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients...We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated greatly exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.展开更多
基金Supported by the Natural Science Foundation of Jiangsu Province under Grant No BK20160400the Science and Technology Project of Suzhou under Grant No SZS201508
文摘We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.
基金Supported by the Natural Science Foundation of Beijing under Grant Nos 2162033 and 7182091the National Natural Science Foundation of China under Grant No 21627813
文摘We present a digital micromirror device（DMD） based superpixel method for focusing light through scattering media by modulating the complex field of incident light. Firstly, we numerically and experimentally investigate focusing light through a scattering sample using the superpixel methods with different target complex fields.Then, single-point and multiple-point focusing experiments are performed using this superpixel-based complex modulation method. In our experiment, up to 71.5% relative enhancement is realized. The use of the DMDbased superpixel method for the control of the complex field of incident light opens an avenue to improve the enhancement of focusing light through scattering media.
文摘Objective To test a quality assurance(QA)DVS solution-DVS based on a linac electronic field imaging device(EPID)and evaluate its accuracy and ease of use.Methods All of the QA items that do not require the dedicated QA phantom in the DVS solution were tested.Test methods were chosen based on the test items:for the collimator rotation center,the coincidence of the radiation and mechanical,mechanical flatness/symmetry and MLC transmission were compared with the existing QA solution;for the leaf position accuracy and repeatability,the original preset beam fields and fields adjusted by 1 mm were compared.Results The collimator rotation center by the DVS solution is similar to the existing solution.For coincidence of radiation and mechanical,the DVS solution provides more data,including 3D distance.For the flatness/symmetry property,the DVS solution can display more graphics,but the overall data is less than the ion-chamber matrix solution.The DVS solution can directly obtain the MLC transmission value and quickly and intuitively measure the position accuracy of the MLC.However,the repeatability is slightly worse.Conclusion The DVS solution can improve the QA work efficiency and reduce workload,and there are more opportunities for improvement.
文摘We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated greatly exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.
