In this paper, a finite element method （FEM）-based multi-phase problem based on a newly proposed thermal elastoplastic constitutive model for saturated/unsaturated geomaterial is discussed. A program of FEM named as...In this paper, a finite element method （FEM）-based multi-phase problem based on a newly proposed thermal elastoplastic constitutive model for saturated/unsaturated geomaterial is discussed. A program of FEM named as SOFT, adopting unified field equations for thermo-hydro-mechanical-air （THMA） behavior of geomaterial and using finite element-finite difference （FE-FD） scheme for so/l-water-air three-phase coupling problem, is used in the numerical simulation. As an application of the newly proposed numerical method, two engineering problems, one for slope failure in unsaturated model ground and another for in situ heating test related to deep geological repository of high-level radioactive waste （HLRW）, are simulated. The model tests on slope failure in unsaturated Shirasu ground, carried out by Kitamura et al. （2007）, is simulated in the framework of soil-water-air three-phase coupling under the condition of constant temperature. While the in situ heating test reported by Munoz （2006） is simulated in the same framework under the conditions of variable temperature hut constant air pressure.展开更多
This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to s...This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design（TCAD） simulation results and also comparing them with results from a silicon based TFET.展开更多
文摘In this paper, a finite element method （FEM）-based multi-phase problem based on a newly proposed thermal elastoplastic constitutive model for saturated/unsaturated geomaterial is discussed. A program of FEM named as SOFT, adopting unified field equations for thermo-hydro-mechanical-air （THMA） behavior of geomaterial and using finite element-finite difference （FE-FD） scheme for so/l-water-air three-phase coupling problem, is used in the numerical simulation. As an application of the newly proposed numerical method, two engineering problems, one for slope failure in unsaturated model ground and another for in situ heating test related to deep geological repository of high-level radioactive waste （HLRW）, are simulated. The model tests on slope failure in unsaturated Shirasu ground, carried out by Kitamura et al. （2007）, is simulated in the framework of soil-water-air three-phase coupling under the condition of constant temperature. While the in situ heating test reported by Munoz （2006） is simulated in the same framework under the conditions of variable temperature hut constant air pressure.
文摘This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,theelectricfieldalongthechannelandtheverticalelectricfield.Thedeviceoutputtunnellingcurrent is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements inon-currentcharacteristics.Theeffectivenessoftheproposedmodelhasbeenverifiedbycomparingtheanalytical model results with the technology computer aided design（TCAD） simulation results and also comparing them with results from a silicon based TFET.
