The Use of Field Dependence/Independence in Language Acquisition

Field dependence/independence in Language Acquisition are discussed by many language learners.In this article,we will mainly focus on talking about the cognitive style,including the concept of Field-dependence/independence,their character istics and differences and functions in language acquisition.

MAGNETIC FIELD AND TEMPERATURE DEPENDENCE OF THE PROPERTIES OF A MAGNETOPOLARON

Taking into account the interaction of an electron with both bulk longitudinaloptical (LO) and interfaceoptical(IO) phonons, we investigate the magnetic field and temperature dependence of the properties of a magnetopolaron at the interface of polarpolar crystals in an external magnetic field by using the generalized Haga perturbation method. The results reveal that as the magnetic field B is lower than critical strengths BCL and BCI, the selftrapping of the interface magnetopolaron weakens with increasing temperature, but it strengthens with the rising temperature when B is higher than BCL and BCI. The effect of temperature becomes striking while B is close to BCL or BCI. The results also show that the farther from the interface the electron, the more markedly the electronLO phonon interction changes with the variation of temperature. On the other hand, the nearer from the interface the electron, the more distinctly the electronIO phonon interaction changes with varying temperature.

Solvent and electric field dependence of the photocurrent generation in donor：acceptor blend system

This paper reports that the blend films of poly （2-methoxy-5-（2＇-ethyl-hexyloxy）-p-phenylene vinylene） （MEH-PPV） and N,N＇-bis（1-ethylpropyl）-3,4： 9,10-perylene bis （tetracarboxyl diimide） （EP-PDI） with the weight ratio of 1：2.5 have been prepared by spin-coating from chloroform （CF） and chlorobenzene （CB） solutions respectively. The absorption spectra and the morphology of the blend films show that large crystal-like EP-PDI aggregates are formed in film prepared from CB solution, which corresponds to a new absorption shoulder near 590 nm, while there is no shoulder around 590 nm in the UV-Vis absorption spectra of the blend film from CF solution. The electric-field dependence spectra of the photocurrent generation quantum yield of the film from CB solution shows that at weak electric field the EP-PDI aggregates act as more efficient sensitizers, but at strong electric field the quantum yields become almost invariable over the entire spectral range no matter what the state of EP-PDI, monomer or aggregate. At strong electric field, the photocurrent generation yields of both films from CF and CB solution saturate and their yield spectra become spectrally similar, mentioning that at strong electric field the photoexcitons dissociate efficiently and the free charges are collected by the electrodes almost completely.

Orientation Dependence of Photoelectron Angular Distribution in Nitrogen Molecule Irradiated by XUV Laser Field

We theoretically study the dependence of photoelectron angular distribution on laser polarization direction in nitrogen molecules. The approach is based on the time-dependent density functional theory at the level of local density approximation complemented by self-interaction correction. It is found that photoelectron emission in one photon regime could be considered as a probing tool for the main character of different types of molecular orbitals （σ or π）. The pattern of emitted photoelectrons strongly depends on the polarized angle of the laser, for σ orbital, the number of photoelectron decreases with increasing the polarized angle, while for π orbital, it has the inverse relation to the polarized angle, which reveals the multi-electron effect in molecules. On the other hand, concerning the total photoelectron emission, one should take into account a few occupied orbitals instead of only the outmost one.

Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors

With the aim of understanding the relationships between organic small molecule field-effect transistors （FETs） and organic conjugated polymer FETs, we investigate the thickness dependence of surface morphology and charge carrier mobility in pentacene and regioregular poly （3-hexylthiophene） （RR-P3HT） field-effect transistors. On the basis of the results of surface morphologies and electrical properties, we presume that the charge carrier mobility is largely related to the morphology of the organic active layer. We observe that the change trends of the surface morphologies （average size and average roughness） of pentacene and RR-P3HT thin films are mutually opposite, as the thickness of the organic layer increases. Further, we demonstrate that the change trends of the field-effect mobilities of pentacene and RR-P3HT FETs are also opposite to each other, as the thickness of the organic layer increases within its limit.

Effect of traps' adjacency on the electric field dependence of mobility in organic systems

In some organic materials, varying the finite distance between adjacent carrier traps modifies the Coulomb potential around each trap, resulting in a more complex field-dependence of mobility, differing from （but not incompatible with） the usually considered relationship of ln μ∝√E ,a relationship which has been successfully explained by the Poole-Frenkel effect. To investigate the influence of the adjacency of traps, a model system is proposed, which consists of two traps separated by distance α. Our numerical calculation shows that with increasing α, the dependence of mobility on the electric field changes from linear to exponential. Moreover, beyond a certain large α, i.e., as the distance to the nearest trap approaches infinity, the proposed model is essentially the same as the Poole-Frenkel effect. The proposed model accounts for the effect of the energy barrier shape, especially the effect of the location of the potential-energy maximum, a phenomenon which is not accommodated in the Poole-Frenkel model. Because the model assumes the Coulomb interaction between the adjacent traps, it applies to those charged traps which may exist in organic materials for various reasons.

Understand anisotropy dependence of damage evolution and material removal during nanoscratch of MgF_(2) single crystals

To understand the anisotropy dependence of the damage evolution and material removal during the machining process of MgF_(2) single crystals,nanoscratch tests of MgF_(2) single crystals with different crystal planes and directions were systematically performed,and surface morphologies of the scratched grooves under different conditions were analyzed.The experimental results indicated that anisotropy considerably affected the damage evolution in the machining process of MgF_(2) single crystals.A stress field model induced by the scratch was developed by considering the anisotropy,which indicated that during the loading process,median cracks induced by the tensile stress initiated and propagated at the front of the indenter.Lateral cracks induced by tensile stress initiated and propagated on the subsurface during the unloading process.In addition,surface radial cracks induced by the tensile stress were easily generated during the unloading process.The stress change led to the deflection of the propagation direction of lateral cracks.Therefore,the lateral cracks propagated to the workpiece surface,resulting in brittle removal in the form of chunk chips.The plastic deformation parameter indicated that the more the slip systems were activated,the more easily the plastic deformation occurred.The cleavage fracture parameter indicated that the cracks propagated along the activated cleavage planes,and the brittle chunk removal was owing to the subsurface cleavage cracks propagating to the crystal surface.Under the same processing parameters,the scratch of the(001)crystal plane along the[100]crystal-orientation was found to be the most conducive to achieving plastic machining of MgF_(2) single crystals.The theoretical results agreed well with the experimental results,which will not only enhance the understanding of the anisotropy dependence of the damage evolution and removal process during the machining of MgF_(2) crystals,but also provide a theoretical foundation for achieving the high-efficiency and low-damage processing of anisotropic single crystals.

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.

The Spin Transition and Susceptibility of NMR Samples in a Time Dependent Longitudinal Field

To construct pulsed high magnet, with rapid adjustments to large changes in the field strength, it is a mandatory acces-sory to development a special NMR probes to provide a precise real-time map of the magnetic field. In order to do so, it is necessary to understand the variations of the spin transition and susceptibility of NMR samples in a time dependent longitudinal field. This work analyzes the effect on the spin transition by a time dependent longitudinal field. For a 1/2 spin system, we have derived a simple formula for the prediction of the probabilities of occupation of the 1/2 and ?1/2 states in a non-static field. We also calculate the magnetic susceptibility of the water and give an analysis of the effect on the magnetic susceptibility in a time dependent longitudinal field and RF frequency.

Photodetachment dynamics of H^- ion in a harmonic potential plus a time-dependent oscillating electric field

The photodetachment dynamics of H^- ion in a harmonic potential plus an oscillating electric field is studied using the time-dependent closed orbit theory. An analytical formula for calculating the photodetachment cross section of this system is put forward. It is found that the photodetachment cross section of this system is nearly unaffected for the weak oscillating electric field strength, but oscillates complicatedly when the oscillating electric field strength turns strong. In addition, the frequency of the harmonic potential and the oscillating electric field （the frequency of the harmonic potential and the frequency of the oscillating electric field are the same in the paper, unless otherwise stated.） can also affect the photodetachment dynamics of this system. With the increase of the frequency in the harmonic potential and the oscillating electric field, the number of the closed orbits for the detached electrons increased, which makes the oscillatory structure in the photodetachment cross section much more complex. Our study presents an intuitive understanding of the photodetachment dynamics driven by a harmonic potential plus an oscillating electric field from a space and time dependent viewpoint. This study is very useful in guiding the future experimental research for the photodetachment dynamics in the electric field both changing with space and time.

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the un- derlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.

Energy states of the Hulthen plus Coulomb-like potential with position-dependent mass function in external magnetic fields

We need to solve a suitable exponential form of the position-dependent mass （PDM） Schr6dinger equation with a charged particle placed in the Hulthen plus Coulomb-like potential field and under the actions of the external magnetic and Aharonov-Bohm （AB） flux fields. The bound state energies and their corresponding wave functions are calculated for the spatially-dependent mass distribution function of interest in physics. A few plots of some numerical results with respect to the energy are shown.

Spin-Unrestricted Multi-Configuration Time-Dependent Hartree Fock Theory

Based on spin-unrestricted hartree fock theory, we present the spin unrestricted multi- configuration time dependent hartree lock theory （UMCTDHF） to describe the electron correlation dynamics of systems interacting with laser field. The positive spin orbitals and the negative spin orbitals are propagated in their own subspace respectively. The spin orbital in the spin-down subspace acts with that in the spin-up subspace by the reduced density matrix and mean field operator. The ground energy is acquired by propagating the trial wave function in the imaginary time by using spin-restricted MCTDHF （RMCTDHF） and UMCTDHF respectively. Then the ionization probabilities and the electrons energies are calculated by using RMCTDHF and UMCTDHF when the laser field is present. The ionization probability calculated with UMCTDHF agrees with the previous theoretical reports very well. The UMCTDHF method is accurate and applicable for open shell system beyond the capability of the RMCTDHF method.

Si_2O_2 molecule:structure of ground state and the excited properties under different external electric fields

Geometry and vibrational frequencies of the ground state of Si2O2 molecule are studied using density function theory （DFT） at the level of cc-pvtz and 6-311-k＋G^＊＊. It is found that the optimizing value by B31yp/cc-pvtz is closer to the experimental data. The excited properties under different external electric fields are also investigated by the time-dependent-DFT method. Transitions from the ground state of Si2O2 molecule to the first singlet state under different external electric fields can take place more easily. The corresponding absorption spectral line is about 360 nm in wavelength and the excitation energy is about 3.4 eV.

Theoretical study of the influence of intense femtosecond laser field on the evolution of the wave packet and the population of NaRb molecule

Employing the two-state model and the time-dependent wave packet method, we have investigated the influences of the parameters of the intense femtosecond laser field on the evolution of the wave packet, as well as the population of ground and double-minimum electronic states of the NaRb molecule. For the different laser wavelengths, the evolution of the wave packet of 6{ }^1／Sigma ^ ＋ state with time and internuclear distance is different, and the different laser intensity brings different influences on the population of the electronic states of the NaRb molecule. One can control the evolutions of wave packet and the population in each state by varying the laser parameters appropriately, which will be a benefit for the light manipulation of atomic and molecular processes.

Above-threshold ionization of hydrogen atom in chirped laser fields

Above-threshold ionization （ATI） of a hydrogen atom exposed to chirped laser fields is investigated theoretically by solving the time-dependent Schrodinger equation. By comparing the energy spectra, the two-dimensional momentum spectra, and the angular distributions of photoelectron for the laser pulses with different chirp rates, we show a very clear chirp dependence both in the multiphoton and tunneling ionization processes but no chirp dependence in the single-photon ionization. We find that the chirp dependence in the multiphoton ionization based ATI can be attributed to the excited bound states. In the single-photon and tunneling ionization regimes, the electron can be removed directly from the ground state and thus the excited states may not be very important. It indicates that the chirp dependence in the tunneling ionization based ATI processes is mainly due to the laser pulses with different chirp rates,

Influence of laser fields on the vibrational population of molecules and its wave-packet dynamical investigation

The time-dependent wave packet method is used to investigate the influence of laser-fields on the vibrational population of molecules. For a two-state system in laser fields, the populations on different vibrational levels of the upper and lower electronic states are given by wavefunctions obtained by solving the Schrbdinger equation with the split- operator method. The calculation shows that the field parameters, such as intensity, wavelength, duration, and delay time etc. can have different influences on the vibrational population. By varying the laser parameters appropriately one can control the evolution of wave packet and so the vibrational population in each state, which will benefit the light manipulation of atomic and molecular processes.

Electron-Helium Scattering in Free-Free Transitions in a Bichromatic Laser Field

Theoretical calculation of the differential cross section （DCS） for elastic electron-helium scattering in the presence of a bichromatic CO2 laser field is carried out in the first Born approximation with a simple screening electric potential. The two components of the laser field have the frequencies w and 2w, which are out of phase by an arbitrary scale φ. The variations of the differential cross section as a function of the phase angle φ in the domain 0°≤ φ ≤360° are presented. We discuss the influence of the number of photons exchanged on the phase-dependee effect. Moreover, for different scattering angles and incident electron energies, the DCS has outstanding ditferences. These illustrate that the two parameters have important effects on the differential cross section and the screening electric potential is effective.

Effects of long-term sustained naltrexone release on the optic center in opioid-dependent patients Case-control study in four provinces of China

Very little is known about visual functional recovery following long-term naltrexone administration in opioid-dependent patients. In the present study, a portable event-related potential （ERP） working system was utilized to collect and record ERP in opioid-dependent patients and normal controls in visual half-field testing. In addition, the influence of long-term sustained naltrexone release on the visual nervous system was observed in opioid-dependent patients. Results revealed a significant main group effect in reaction time to visual signal stimulations. The reaction time of normal controls was shortest, but longest in opioid-dependent patients. The reaction time of long-term sustained naltrexone release group and compulsory detoxification group was similar to normal controls. A significant main group effect was also observed in P100 latency, and P100 latency in normal controls and the compulsory detoxification group was significantly decreased compared with the opioid-dependent patients. P100 amplitude at the Oz-electrode resulted in a significant main group effect. In particular, normal controls exhibited significant differences compared with long-term sustained release naltrexone and compulsory detoxification groups. These findings demonstrated that long-term sustained naltrexone release effectively ameliorated optic center function and improved visual sensitivity and reactions in opioid-dependent patients.

Effect of temperature dependent viscosity on revolving axi-symmetric ferrofluid flow with heat transfer

The prime objective of the present study is to examine the effect of tempera- ture dependent viscosity/z（T） on the revolving axi-symmetric laminar boundary layer flow of an incompressible, electrically non-conducting ferrofiuid in the presence of a stationary plate subjected to a magnetic field and maintained at a uniform temperature. To serve this purpose, the non-linear coupled partial differential equations are firstly converted into the ordinary differential equations using well-known similarity transformations. The popular finite difference method is employed to discretize the non-linear coupled differ- ential equations. These discretized equations are then solved using the Newton method in MATLAB, for which an initial guess is made with the help of the Flex PDE Solver. Along with the velocity profiles, the effects of temperature dependent viscosity are also examined on the skin friction, the heat transfer, and the boundary layer displacement thickness. The obtained results are presented numerically as well as graphically.