New Topologies of High Torque Density Machine Based on Magnetic Field Modulation Principle

With the increasing demand for high torque density in motors,more and more new topologies emerge.Furthermore,the magnetic field modulation principle is widely concerned and has evolved into an effective analysis method for studying the new motor topology.This paper introduces the principle of magnetic field modulation.And the research on high torque density in recent years is reviewed from the perspective of magnetic field modulation,including permanent magnet vernier machine(PMVM),flux reverse machine(FRM),flux switching machine(FSM),dual permanent magnet(DPM)machine,and DC biased machine.The principle of magnetic field modulation makes it possible to propose higher torque density topologies in the future.

Superpixel-Based Complex Field Modulation Using a Digital Micromirror Device for Focusing Light through Scattering Media

We present a digital micromirror device（DMD） based superpixel method for focusing light through scattering media by modulating the complex field of incident light. Firstly, we numerically and experimentally investigate focusing light through a scattering sample using the superpixel methods with different target complex fields.Then, single-point and multiple-point focusing experiments are performed using this superpixel-based complex modulation method. In our experiment, up to 71.5% relative enhancement is realized. The use of the DMDbased superpixel method for the control of the complex field of incident light opens an avenue to improve the enhancement of focusing light through scattering media.

Torque production mechanism of switched reluctance machines with field modulation principle

This paper aims to investigate the torque production mechanism and its improvement design in switched reluctance machines(SRMs) based on field modulation principle. Firstly, the analytical expressions of the air-gap magnetic field are derived from the perspective of DC-and AC-components, respectively. Meanwhile, different slot/pole combinations and winding arrangements are considered. Secondly, the torque productions are analyzed and evaluated with emphasis on the interaction between the DCand AC-components of air-gap fields. Thirdly, the 12-slot/8-pole and 12-slot/10-pole SRMs are established and studied by using the finite-element method. The effects of slot/pole combination and winding arrangement on the average torque production are clarified. Then, two new designs to improve the average torque are proposed. Finally, the prototype of the 12-slot/10-pole SRM is manufactured, and the experiments are carried out for validation.

Modulation of energy spectrum and control of coherent microwave transmission at single-photon level by longitudinal field in a superconducting quantum circuit

We study the effect of longitudinally applied field modulation on a two-level system using superconducting quantum circuits. The presence of the modulation results in additional transitions and changes the magnitude of the resonance peak in the energy spectrum of the qubit. In particular, when the amplitude ,λz and the frequency COl of the modulation field meet certain conditions, the resonance peak of the qubit disappears. Using this effect, we further demonstrate that the longitudinal field modulation of the Xmon qubit coupled to a one-dimensional transmission line could be used to dynamically control the transmission of single-photon level coherent resonance microwave.

Observation of the exceptional point in superconducting qubit with dissipation controlled by parametric modulation

Open physical systems described by the non-Hermitian Hamiltonian with parity-time-reversal(PT)symmetry show peculiar phenomena,such as the presence of an exceptional point(EP)at which the PT symmetry is broken and two resonant modes of the Hamiltonian become degenerate.Near the EP,the system could be more sensitive to external perturbations and this may lead to enhanced sensing.In this paper,we present experimental results on the observation of PT symmetry broken transition and the EP using a tunable superconducting qubit.The quantum system of investigation is formed by the two levels of the qubit and the energy loss of the system to the environment is controlled by a method of parametric modulation of the qubit frequency.This method is simple with no requirements for additional elements or qubit device modifications.We believe it can be easily implemented on multi-qubit devices that would be suitable for further exploration of non-Hermitian physics in more complex and diverse systems.

Calibration and data restoration of light field modulated imaging spectrometer

A light field modulated imaging spectrometer （LFMIS） can acquire the spatial-spectral datacube of targets of interest or a scene in a single shot. The spectral information of a point target is imaged on the pixels covered by a microlens. The pixels receive spectral information from different spectral filters to the diffraction and misalignments of the optical components. In this paper, we present a linear spectral multiplexing model of the acquired target spectrum. A calibration method is proposed for calibrating the center wavelengths and bandwidths of channels of an LFMIS system based on the liner-variable filter （LVF） and for determining the spectral multiplexing matrix. In order to improve the accuracy of the restored spectral data, we introduce a reconstruction algorithm based on the total least square （TLS） approach. Simulation and experimental results confirm the performance of the spectrum reconstruction algorithm and validate the feasibility of the proposed calibrating scheme.

Simulation of Intermediate State Absorption Enhancement in Rare-Earth Ions by Polarization Modulated Femtosecond Laser Field

We extend the third perturbation theory to study the polarization control behavior of the intermediate state absorption in Nd^（3＋）ions. The results show that coherent interference can occur between the single-photon and three-photon excitation pathways, and depends on the central frequency of the femtosecond laser field. Moreover,single-photon and three-photon absorptions have different polarization control efficiencies, and the relative weight of three-photon absorption in the whole excitation processes can increase with increasing the laser intensity.Therefore, the enhancement or suppression of the intermediate state absorption can be realized and manipulated by properly designing the intensity and central frequency of the polarization modulated femtosecond laser field.This research can not only enrich theoretical research methods for the up-conversion luminescence manipulation of rare-earth ions, but also can provide a clear physical picture for understanding and controlling multi-photon absorption in a multiple energy level system.

Multi-channel generation of vortex beams with controllable polarization states and orbital angular momentum

Optical vortices with tunable polarization states and topological charges are widely investigated in various physical systems and practical devices for high-capacity optical communication.However,this kind of structured light beams is usually generated using several polarization and spatial phase devices,which decreases the configurability of optical systems.Here,we have designed a kind of polarized optical multi-vortices generator based on the Stokes-Mueller formalism and cross-phase modulation.In our scheme,multi-channel generation of polarized vortex beams can be realized through a single optical element and a single-input Gaussian beam.The polarization states and orbital angular momentum of the generated light beams are all-optically controllable.Furthermore,the proposed polarized optical multi-vortices generator has also been demonstrated experimentally through one-step holographic recording in an azobenzene liquid-crystalline film and the experimental results agree with theoretical analysis.

High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.

Breakdown voltage analysis of Al_(0.25)Ga_(0.75)N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage （BV）. The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.

Recent Developments and Comparative Study of Magnetically Geared Machines

This paper overviews the recent developments and various topologies of magnetically geared(MGd)machines.Particularly,current design trends and research hotspots of this kind of MGd machines are emphasized,with the aid of statistic summary of the published papers.According to different evolutions from a magnetic gear(MG),four mainstreams of MGd machines are extracted and compared in terms of both mechanical complexity and electromagnetic performance.By virtue of their inherent features,such as high torque density and multi-power port,the feasibility of MGd machines for applications,where continuously variable transmission(CVT)and power split are demanded,is also described.

Novel fast-switching LIGBT with P-buried layer and partial SOI

A novel silicon-on-insulator lateral insulated gate bipolar transistor(SOI LIGBT)is proposed in this paper.The proposed device has a P-type buried layer and a partial-SOI layer,which is called the BPSOI-LIGBT.Due to the electric field modulation effect generated by the P-type buried layer and the partial-SOI layer,the proposed structure generates two new peaks in the surface electric field distribution,which can achieve a smaller device size with a higher breakdown voltage.The smaller size of the device is beneficial to the fast switching.The simulation shows that under the same size,the breakdown voltage of the BPSOI LIGBT is 26%higher than that of the conventional partial-SOI LIGBT(PSOI LIGBT),and 84%higher than the traditional SOI LIGBT.When the forward voltage drop is 2.05 V,the turn-off time of the BPSOI LIGBT is 71%shorter than that of the traditional SOI LIGBT.Therefore,the proposed BPSOI LIGBT has a better forward voltage drop and turn-off time trade-off than the traditional SOI LIGBT.In addition,the BPSOI LIGBT effectively relieves the self-heating effect of the traditional SOI LIGBT.

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor(LIGBT)based on silicon-on-insulator(SOI)structure is proposed and investigated.This device features a compound dielectric buried layer(CDBL)and an assistant-depletion trench(ADT).The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that,under the same breakdown voltage(BV)condition,allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers.Reducing their numbers helps in fast-switching.Furthermore,the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel.The simulation results show that the BV of the proposed LIGBT is increased by 113%compared with the conventional SOI LIGBT of the same length L_(D).Contrastingly,the length of the drift region of the proposed device(11.2μm)is about one third that of a traditional device(33μm)with the same BV of 141 V.Therefore,the turn-off loss(E_(OFF))of the CDBL SOI LIGBT is decreased by 88.7%compared with a conventional SOI LIGBT when the forward voltage drop(VF)is 1.64 V.Moreover,the short-circuit failure time of the proposed device is 45%longer than that of the conventional SOI LIGBT.Therefor,the proposed CDBL SOI LIGBT exhibits a better V_(F)-E_(OFF)tradeoff and an improved short-circuit robustness.

Enhanced modulation of magnetic field on surface plasmon coupled emission(SPCE) by magnetic nanoparticles

The obvious enhancement effect of magnetic nanoparticles(MNPs) introduced in Cr/Co/Cr/Au substrate on the pulsed magnetic field-modulated surface plasmon coupled emission(SPCE) was investigated,and the observed enhancement factor was 4 comparing with the magnetic field modulated SPCE without MNPs.This is the new observation for the magnetic field modulated SPCE,and this method was designed as a biosensor,which to our knowledge,is the first application of magnetic field-modulated SPCE in biosensing and detection field.This strategy is a universal approach to increase the fluorescence signal and helps to build the new SPCE based stimulus-response system.

A Novel High Performance Magnetic Gear with Auxiliary Silicon Steel Sheet

Magnetic gear is a transmission device with novel structure.It uses the principle of magnetic field modulation to transmit torque.In view of the magnetic leakage of the magnetic gear in the process of rotation and cannot be eliminated,a magnetic gear model with auxiliary silicon steel sheet is proposed.Based on the conventional magnetic gear structure,the silicon steel sheet is placed outside the permanent magnet of the outer rotor.The magnetization mode of the outer rotor permanent magnet is tangential magnetization,and the spoke structure is adopted,and the inner rotor PMs is surface mounted and magnetized in the radial magnetization.The improved model is simulated by finite element method under three-dimensional conditions,and the electromagnetic performances of the model are optimized.Compared with the conventional magnetic gear model,the improved model has good performance,which improves the transmission capacity of output torque and reduces torque ripple.It is a great significance to improve the performance of magnetic gear.

Advanced Electrical Motors and Control Strategies for High-quality Servo Systems-A Comprehensive Review

Recent technological advancements have propelled remarkable progress in servo systems,resulting in their extensive utilization across various high-end applications.A comprehensive review of high-quality servo system technologies,focusing specifically on electrical motor topologies and control strategies is presented.In terms of motor topology,this study outlines the mainstream servo motors used across different periods,as well as the latest theories and technologies surrounding contemporary servo motors.In terms of control strategies,two well-established approaches are presented:field-oriented control and direct torque control.Additionally,it discusses advanced control strategies employed in servo systems,such as model predictive control(MPC)and fault tolerance control,among others.

Flow Control During Solidification of AlSi-Alloys by Means of Tailored AC Magnetic Fields

This paper presents an experimental study which in a first stage is focused on obtaining quantitative information about the isothermal flow field exposed to various magnetic field configurations.Melt stirring has been realized by utilizing time-modulated AC magnetic fields in different variants.We consider time-modulated fields or combinations of traveling magnetic fields(TMF)and rotating magnetic fields(RMF).In a second step solidification experiments are carried out to verify the effect of a certain flow field on the solidification process.Our results demonstrate that the melt agitation using modulated magnetic fields offers a considerable potential for a well-aimed modification of casting properties by an effective control of the flow field.

Magnets Shifting Design of Dual PM Excited Vernier Machine for High-torque Application

In this study,a novel dual permanent magnet excited vernier machine(DPMEVM)with magnets shifting in stator is proposed.Compared with the conventional permanent magnet synchronous machine(PMSM),the DPMEVM based on the bidirectional field modulation effect can operate in a wider torque range.However,the torque ripple of a conventional DPMEVM is high because of the superposition of the torque generated by the stator-side and rotor-side PMs.Consequently,a novel DPMEVM with magnets shifting is proposed to further reduce the torque ripple.First,the topologies and working principles of the baseline machine and proposed machines are introduced.Second,the torque-contribution harmonics are analyzed and calculated using the Maxwell tensor method.The calculation results reveal that the DPMEVM,benefiting from multiple working harmonics,can offer an enhanced torque capability compared to the PMSM.In addition,the torque ripple characteristics of the proposed machines are analyzed.It is verified that the torque ripple can be significantly reduced through magnets shifting.Third,the performances of the baseline machine and proposed machines are analyzed and compared in terms of flux density,open-circuit back-EMF,and torque characteristics.In addition,the proposed principle can be extended to machines with the same unit motor.Finally,a 120s-110p prototype machine is manufactured for validation.

A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer

A novel buffer super-junction （S J） lateral double-diffused MOSFET （LDMOS） with an N-type buried layer （NB） is proposed. An N- buffer layer is implemented under the SJ region and an N-type layer is buried in the P substrate. Firstly, the new electric field peak introduced by the p-n junction of the P substrate and the N-type buried layer modulates the surface electric field distribution. Secondly, the N-buffer layer suppresses the substrate assisted depletion effect. Both of them improve the breakdown voltage （BV）. Finally, because of the shallow depth of the SJ region, the NB buffer SJ-LDMOS is compatible with Bi-CMOS technology. Simulation results indicate that the average value of the surface lateral electric field strength of the NB buffer SJ-LDMOS reaches 23 V/μm at 15/μm drift length which results in a BV of 350 V and a specific on-resistance of 21 mΩ·cm2.