Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes （SBDs） with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon （SIPOS） FP termination has been fabricated. The ...Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes （SBDs） with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon （SIPOS） FP termination has been fabricated. The relative dielectric con-stant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2 dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leak-age current 20 μA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61234006 and 61274079)the Key Specific Projects of Ministry of Education of China(Grant No.625010101)the Science Project of State Grid,China(Grant No.SGRI-WD-71-13-004)
文摘Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes （SBDs） with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon （SIPOS） FP termination has been fabricated. The relative dielectric con-stant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2 dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leak-age current 20 μA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.
