Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field（PCF） scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.

Resistance and Reactance of Monopole Fields Induced by a Test Charge Drifting Off-Axis in a Cold and Collisional Cylindrical Plasma

We study the interaction of a uniform, cold and collisional plasma with a test charged particle moving off-axis at a constant speed down a cylindrical tube with a resistive thick metallic wall. Upon matching the electromagnetic field components at all interfaces, the induced monopole electromagnetic fields in the plasma are obtained in the frequency domain. An expression for the plasma electric resistance and reactance is derived and analyzed numerically for some representative parameters. Near the plasma resonant frequency, the plasma resistance evolves with frequency like a parallel RLC resonator with peak resistance at the plasma frequency pe, while the plasma reactance can be capacitive or inductive in nature depending on the frequency under consideration.

Depositing aluminum as sacrificial metal to reduce metal–graphene contact resistance

Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597Ω ·μm to sub 200 Ω ·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.

A new ecological control method for Pisha sandstone based on hydrophilic polyurethane

The Pisha sandstone-coverd area is among the regions that suffer from the most severe water loss and soil erosion in China and is the main source of coarse sand for the Yellow River. This study demonstrated a new erosion control method using W-OH solution, a type of hydrophilic polyurethane, to prevent the Pisha sandstone from water erosion. We evaluated the comprehensive effects of W-OH on water erosion resistance and vegetation-growth promotion through simulated scouring tests and field demonstrations on the Ordos Plateau of China. The results of simulated scouring tests show that the water erosion resistance of W-OH treated area was excellent and the cumulative sediment yield reduction reached more than 99%. In the field demonstrations, the vegetation coverage reached approximately 95% in the consolidation-green area, and there was almost no shallow trenches on the entire slope in the treated area. In comparison, the control area experienced severe erosion with deep erosion gullies appeared on the slope and the vegetation coverage was less than 30%. This study illustrated that W-OH treatment can protect the Pisha sandstone from erosion and provide the vegetation seeds a chance to grow. Once the vegetation matured, the effects of consolidation-growth mutual promotion can efficiently and effectively improve the water erosion resistance and ecological restoration.

Effect of Axial Magnetic Field on the Microstructure, Hardness and Wear Resistance of TiN Films Deposited by Arc Ion Plating

TiN films were deposited on stainless steel substrates by arc ion plating. The influence of an axial magnetic field was examined with regard to the microstructure, chemical elemental composition, mechanical properties and wear resistance of the films. The results showed that the magnetic field puts much effect on the preferred orientation, chemical composition, hardness and wear resistance of TiN films. The preferred orientation of the TiN films changed from（111） to（220） and finally to the coexistence of（111） and（220） texture with the increase in the applied magnetic field intensity. The concentration of N atoms in the TiN films increases with the magnetic field intensity, and the concentration of Ti atoms shows an opposite trend. At first, the hardness and elastic modulus of the TiN films increase and reach a maximum value at 5 m T and then decrease with the further increase in the magnetic field intensity. The high hardness was related to the N/Ti atomic ratio and to a well-pronounced preferred orientation of the（111） planes in the crystallites of the film parallel to the substrate surface. The wear resistance of the Ti N films was significantly improved with the application of the magnetic field, and the lowest wear rate was obtained at magnetic field intensity of 5 m T. Moreover, the wear resistance of the films was related to the hardness H and the H3/E＊2 ratio in the manner that a higher H3/E＊2 ratio was conducive to the enhancement of the wear resistance.