Solution-processed n-type organic semiconductor micro/nanocrystals （OSMCs） are fundamental elements for developing low-cost, large-area, and all organic logic/complementary circuits. However, the development of air-...Solution-processed n-type organic semiconductor micro/nanocrystals （OSMCs） are fundamental elements for developing low-cost, large-area, and all organic logic/complementary circuits. However, the development of air-stable, highly aligned n-channel OSMC arrays for realizing high-performance devices lags far behind their p-channel counterparts. Herein, we present a simple one-step slope-coating method for the large-scale, solution-processed fabrication of highly aligned, air-stable, n-channel ribbon-shaped single-crystalline N,N＇-bis（2- phenylethyl）-perylene-3,4：9,10-tetracarboxylic diimide （BPE-PTCDI） arrays. The slope and pattemed photoresist （PR） stripes on the substrate are found to be crucial for the formation of large-area submicron ribbon arrays. The width and thickness of the BPE-PTCDI submicron ribbons can be finely tuned by controlling the solution concentration as well as the slope angle. The resulting BPE-PTCDI submicron ribbon arrays possess an optimum electron mobility up to 2.67 cm2.V-l.s-1 （with an average mobility of 1.13 cm2.V-l-s-1）, which is remarkably higher than that of thin film counterparts and better than the performance reported previously for single-crystalline BPE-PTCDI-based devices. Moreover, the devices exhibit robust air stability and remain stable after exposing in air over 50 days. Our study facilitates the development of air-stable, n-channel organic field-effect transistors （OFETs） and paves the way towards the fabrication of high-performance, organic single crystal-based integrated circuits.展开更多
This paper describes the definition of the complete transistor.For semiconductor devices,the complete transistor is always bipolar,namely,its electrical characteristics contain both electron and hole currents controll...This paper describes the definition of the complete transistor.For semiconductor devices,the complete transistor is always bipolar,namely,its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions.Partially complete or incomplete transistors,via coined names or/and designed physical geometries,included the 1949 Shockley p/n junction transistor（later called Bipolar Junction Transistor,BJT）,the 1952 Shockley unipolar ＇field-effect＇ transistor（FET,later called the p/n Junction Gate FET or JGFET）,as well as the field-effect transistors introduced by later investigators.Similarities between the surface-channel MOS-gate FET（MOSFET） and the volume-channel BJT are illustrated.The bipolar currents,identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base,led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices,and also the importance of the terminal contacts.展开更多
文摘Solution-processed n-type organic semiconductor micro/nanocrystals （OSMCs） are fundamental elements for developing low-cost, large-area, and all organic logic/complementary circuits. However, the development of air-stable, highly aligned n-channel OSMC arrays for realizing high-performance devices lags far behind their p-channel counterparts. Herein, we present a simple one-step slope-coating method for the large-scale, solution-processed fabrication of highly aligned, air-stable, n-channel ribbon-shaped single-crystalline N,N＇-bis（2- phenylethyl）-perylene-3,4：9,10-tetracarboxylic diimide （BPE-PTCDI） arrays. The slope and pattemed photoresist （PR） stripes on the substrate are found to be crucial for the formation of large-area submicron ribbon arrays. The width and thickness of the BPE-PTCDI submicron ribbons can be finely tuned by controlling the solution concentration as well as the slope angle. The resulting BPE-PTCDI submicron ribbon arrays possess an optimum electron mobility up to 2.67 cm2.V-l.s-1 （with an average mobility of 1.13 cm2.V-l-s-1）, which is remarkably higher than that of thin film counterparts and better than the performance reported previously for single-crystalline BPE-PTCDI-based devices. Moreover, the devices exhibit robust air stability and remain stable after exposing in air over 50 days. Our study facilitates the development of air-stable, n-channel organic field-effect transistors （OFETs） and paves the way towards the fabrication of high-performance, organic single crystal-based integrated circuits.
基金supported by the CTSAH Associates(CTSA)founded by the late Linda Su-Nan Chang Sah,in memory of her 70th anniversary. The content of this article was presented as the conference opening keynote by Jie Binbin at the Work-shop on Compact Modeling on May 5, 2009 in Houston, Texas, USA
文摘This paper describes the definition of the complete transistor.For semiconductor devices,the complete transistor is always bipolar,namely,its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions.Partially complete or incomplete transistors,via coined names or/and designed physical geometries,included the 1949 Shockley p/n junction transistor（later called Bipolar Junction Transistor,BJT）,the 1952 Shockley unipolar ＇field-effect＇ transistor（FET,later called the p/n Junction Gate FET or JGFET）,as well as the field-effect transistors introduced by later investigators.Similarities between the surface-channel MOS-gate FET（MOSFET） and the volume-channel BJT are illustrated.The bipolar currents,identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base,led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices,and also the importance of the terminal contacts.
