The role of double oxide film (bifilm) defects in the formation of gas porosity in commercial purity and Srcontaining AI alloys was investigated by means of a reduced pressure test (RPT) technique. The liquid meta...The role of double oxide film (bifilm) defects in the formation of gas porosity in commercial purity and Srcontaining AI alloys was investigated by means of a reduced pressure test (RPT) technique. The liquid metal was poured from a height into a crucible to introduce oxide defects into the melt. The melt was then subjected to different "hydrogen addition" and "holding in liquid state" regimes before RPT samples were taken. The RPT samples were then characterized by determining their porosity parameters and examining the internal surfaces of the pores formed in them by scanning electron microscopy. The results indicated oxide defects as the initiation sites for the growth of gas porosity, both in commercial purity and Sr-containing AI alloys. The results also rejected reduction of the surface tension of the melt, increase in the volumetric shrinkage and reduction in interdendritic feeding as the possible causes of an increase in the porosity content of the AI castings modified with strontium. The change in the composition of the oxide layers of double oxide film defects was suggested to be responsible for this behaviour.展开更多
The morphology of double oxide film defects and their influence on the tensile mechanical properties of a commercial Cu-Al (C95800) alloy were investigated in this study. Plane castings were produced with two types ...The morphology of double oxide film defects and their influence on the tensile mechanical properties of a commercial Cu-Al (C95800) alloy were investigated in this study. Plane castings were produced with two types of pouting systems, and their tensile properties were measured and then analyzed by means of Weibull statistics method. The fracture surfaces of the tensile specimens were examined using scanning electron microscopy equipped with energy-dispersive spectroscopy. A large amount of double oxide film defects were observed on the tensile fractured specimens of the topfilled plane castings, and their chemical composition is identified to be Al2O3. Weibull statistics analyses showed that the double oxide film defects significantly reduce mechanical properties of the castings investigated. Furthermore, the ultimate tensile strength is more obviously deteriorated by double oxide film defects than elongation.展开更多
The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations (GNDs) are analytically investigated in this paper. Firstly, this defect-ener...The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations (GNDs) are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations (or pile-ups) moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.展开更多
Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-...Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.展开更多
The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics (MD) simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD ...The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics (MD) simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K. In addition, the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases. Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.展开更多
Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptor...Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.展开更多
An entrainment defect(also known as a double oxide film defect or bifilm) acts a void containing an entrapped gas when submerged into a light-alloy melt, thus reducing the quality and reproducibility of the final cast...An entrainment defect(also known as a double oxide film defect or bifilm) acts a void containing an entrapped gas when submerged into a light-alloy melt, thus reducing the quality and reproducibility of the final castings. Previous publications, carried out with Al-alloy castings, reported that this trapped gas could be subsequently consumed by the reaction with the surrounding melt, thus reducing the void volume and negative effect of entrainment defects. Compared with Al-alloys, the entrapped gas within Mg-alloy might be more efficiently consumed due to the relatively high reactivity of magnesium. However, research into the entrainment defects within Mg alloys has been significantly limited. In the present work, AZ91 alloy castings were produced under different carrier gas atmospheres(i.e., SF6/CO2, SF6/air).The evolution processes of the entrainment defects contained in AZ91 alloy were suggested according to the microstructure inspections and thermodynamic calculations. The defects formed in the different atmospheres have a similar sandwich-like structure, but their oxide films contained different combinations of compounds. The use of carrier gases, which were associated with different entrained-gas consumption rates, affected the reproducibility of AZ91 castings.展开更多
文摘The role of double oxide film (bifilm) defects in the formation of gas porosity in commercial purity and Srcontaining AI alloys was investigated by means of a reduced pressure test (RPT) technique. The liquid metal was poured from a height into a crucible to introduce oxide defects into the melt. The melt was then subjected to different "hydrogen addition" and "holding in liquid state" regimes before RPT samples were taken. The RPT samples were then characterized by determining their porosity parameters and examining the internal surfaces of the pores formed in them by scanning electron microscopy. The results indicated oxide defects as the initiation sites for the growth of gas porosity, both in commercial purity and Sr-containing AI alloys. The results also rejected reduction of the surface tension of the melt, increase in the volumetric shrinkage and reduction in interdendritic feeding as the possible causes of an increase in the porosity content of the AI castings modified with strontium. The change in the composition of the oxide layers of double oxide film defects was suggested to be responsible for this behaviour.
文摘The morphology of double oxide film defects and their influence on the tensile mechanical properties of a commercial Cu-Al (C95800) alloy were investigated in this study. Plane castings were produced with two types of pouting systems, and their tensile properties were measured and then analyzed by means of Weibull statistics method. The fracture surfaces of the tensile specimens were examined using scanning electron microscopy equipped with energy-dispersive spectroscopy. A large amount of double oxide film defects were observed on the tensile fractured specimens of the topfilled plane castings, and their chemical composition is identified to be Al2O3. Weibull statistics analyses showed that the double oxide film defects significantly reduce mechanical properties of the castings investigated. Furthermore, the ultimate tensile strength is more obviously deteriorated by double oxide film defects than elongation.
基金supported by the National Natural Science Foundation of China (10772096)
文摘The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations (GNDs) are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations (or pile-ups) moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.
基金This work was supported by the Chinese Academy of Sciences within"The Hundred Talent Projecr"(99-019-122288)National High Technical Research and Development Programme of China(No.2001AA513060)+1 种基金the 10th Five-Year Plan of Guangdong Province(A1100501)the National Natural Science Fundation of China(No.50376067).
文摘Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemica l vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin fil ms by scan electron microscopy (SEM) technique.
基金supported by the Program for Changjiang Scholars and Innovative Research Team in the Universities of the Ministry of Education of China (No. IRT0520)
文摘The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics (MD) simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K. In addition, the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases. Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.
基金Supported by the Hebei Provincial Young Top-Notch Talent Support Program under Grant No BJRC2016the Innovative Funding Project of Graduates of Hebei University under Grant No hbu2018ss62the Midwest Universities Comprehensive Strength Promotion Project
文摘Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.
基金funding from the EPSRC Li ME grant EP/H026177/1。
文摘An entrainment defect(also known as a double oxide film defect or bifilm) acts a void containing an entrapped gas when submerged into a light-alloy melt, thus reducing the quality and reproducibility of the final castings. Previous publications, carried out with Al-alloy castings, reported that this trapped gas could be subsequently consumed by the reaction with the surrounding melt, thus reducing the void volume and negative effect of entrainment defects. Compared with Al-alloys, the entrapped gas within Mg-alloy might be more efficiently consumed due to the relatively high reactivity of magnesium. However, research into the entrainment defects within Mg alloys has been significantly limited. In the present work, AZ91 alloy castings were produced under different carrier gas atmospheres(i.e., SF6/CO2, SF6/air).The evolution processes of the entrainment defects contained in AZ91 alloy were suggested according to the microstructure inspections and thermodynamic calculations. The defects formed in the different atmospheres have a similar sandwich-like structure, but their oxide films contained different combinations of compounds. The use of carrier gases, which were associated with different entrained-gas consumption rates, affected the reproducibility of AZ91 castings.
基金V. ACKN0WLEDGMENT This work was supported by the National Natural Science Foundation of China (No.10425072) and the National High Technology Research and Development Program of China (2003AA84ts18).