Influence of the Source to Substrate Distance on the Growth,Tribological Properties and Optical Properties of Be Films

The Be films were prepared by thermal evaporation at different sources to substrate distances（SSD） on glass substrates. The decrease of SSD from 90 mm to 50 mm caused the increase of substrate temperature and the rising density of incident Be atoms, thus the properties of Be films greatly changed accordingly. The experimental results showed that the grain diameter in the Be films transited from below 100 nm to 300 nm, the film growth rate increased from 2.35 nm/min to 4.73 nm/min and the roughness increased from 7 nm to 49 nm. The performance study suggested that the friction coefficient of Be films increased from 0.13 to 0.27 and was related to the surface roughness and inner structure, the near-infrared reflectance of Be films increased from 40% to 85% with the increase of wavelength and concurrently decreased with the decrease of SSD, respectively. The performance study indicated that the Be film had the potential application in specific near-infrared reflectance optical system.

P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn_3N_2 Films

P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.

MECHANISM OF BOUNDARY LUBRICATION UNDER POINT CONTACT

The acid number of the mixed solution of 150SN oil and oleic acid characterizes the volume content of oleic acid in the solution, based on which the adsorptive capability of oleic acid is studied on the 45 steel balls and disks. Boundary lubrication tests are carried out on a self designed ball-on-disk machine, The base oil is pure 150SN oil, and oleic acid as additive are added into the lubricant. Disks have surface roughness values （Ra） of 0.8 μn and 0.4 μn. The electrical contact resistance method is used to determine the lubrication status. Hypothesize that the molecular film is monomolecular layer in condensed state and the opposing surfaces are completely separated by molecular film. A boundary lubrication model is established according to experimental results and hypothesizes. The experimental and calculatienal results show that the adsorption of polar molecules on steel surface is the main factor to form the boundary lubrication film. Load and sliding speed contribute little to the friction coefficient of boundary lubrication. The properties of steel surface and additive for the lubricant significantly influence on the characters of boundary lubrication. The smaller the surface roughness value is, the smaller the friction coefficient of the boundary lubrication is.

Integrated transcriptomic and proteomic study on the different molecular mechanisms of PC12 cell growth on chitosan and collagen/chitosan films

The purpose of this article is to integrate the transcriptomic analysis and the proteomic profiles and to reveal and compare the different molecular mechanisms of PC12 cell growth on the surface of chitosan films and collagen/chitosan films.First,the chitosan films and the collagen/chitosan films were prepared.Subsequently,the cell viability assay was performed;the cell viability of the PC12 cells cultured on the collagen/chitosan films for 24 h was significantly higher than that on the chitosan films.Then,with cDNA microarray,the numbers of differentially expressed genes of PC12 cells on the surface of chitosan and collagen/chitosan films were 13349 and 5165,respectively.Next,the biological pathway analysis indicated that the differentially expressed genes were involved in 40 pathways directly related to cell adhesion and growth.The integrated transcriptomic and our previous proteomic analysis revealed that three biological pathways-extracellular matrix-receptor interaction,focal adhesion and regulation of actin cytoskeleton-were regulated in the processes of protein adsorption,cell adhesion and growth.The adsorbed proteins on the material surfaces further influenced the expression of important downstream genes by regulating the expression of related receptor genes in these three pathways.In comparison,chitosan films had a strong inhibitory effect on PC12 cell adhesion and growth,resulting in the significantly lower cell viability on its surface;on the contrary,collagen/chitosan films were more conducive to promoting PC12 cell adhesion and growth,resulting in higher cell viability.

Microstructure and Magnetic Anisotropy of FeCoNbB Films

Effect of Nb contents on microstructure and magnetic properties of FeCoNbB films has been studied. X-ray diffraction （XRD） analysis reveals that Nb plays a role in refining grain and in facilitating formation of amorphous structure. When Nb content is more than 8 at%, the films transform from crystalline to amorphous structure, accompanied by variations in magnetic properties. An unusual out-of-plane anisotropy component is consequently observed. It can be suggested that the anisotropy induced by increasing Nb contents be attributed to stress-related magnetoelastic anisotropy. The undesirable anisotropy is greatly reduced by thermal annealing, reducing film thicknesses or applying an external magnetic field together with Si addition.

Analysis of the current density characteristics in through-mask electrochemical micromachining(TMEMM) for fabrication of micro-hole arrays on invar alloy film

Invar alloy consisting of 64% iron and 36% nickel has been widely used for the production of shadow masks for organic light emitting diodes（OLEDs） because of its low thermal expansion coefficient（1.86 × 10^-6cm/°C）.To fabricate micro-hole arrays on 30 lm invar alloy film,through-mask electrochemical micromachining（TMEMM） was developed and combined with a portion of the photolithography etching process.For precise hole shapes,patterned photoresist（PR） film was applied as an insulating mask.To investigate the relationship between the current density and the material removal rate,the principle of the electrochemical machining was studied with a focus on the equation.The finite element method（FEM） was used to verify the influence of each parameter on the current density on the invar alloy film surface.The parameters considered were the thickness of the PR mask,inter-electrode gap（IEG）,and electrolyte concentration.Design of experiments（DOE） was used to figure out the contribution of each parameter.A simulation was conducted with varying parameters to figure out their relationships with the current density.Optimization was conducted to select the suitable conditions.An experiment was carried out to verify the simulation results.It was possible to fabricate micro-hole arrays on invar alloy film using TMEMM,which is a promising method that can be applied to fabrications of OLEDs shadow masks.

Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal(100) GaAs and(001) Si Substrate Fabricated by Pulsed Laser Deposition

FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system.Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser.X-ray diffraction reveals the presence of first-order order–disorder structure ofgrain phase and disordered bcc A2 structure on GaAs substrate.The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities.However,film on Si substrate did not exhibit structure change,which can be attributed to a large lattice mismatch between FeGa and Si.