A novel fiber optic sensor based on optical composite oxygen-sensitive film was developed for determination of 2,4-dichlorophenol(DCP).The optical composite oxygen-sensitive film consists of tris(2,2’-bipyridyl)dichl...A novel fiber optic sensor based on optical composite oxygen-sensitive film was developed for determination of 2,4-dichlorophenol(DCP).The optical composite oxygen-sensitive film consists of tris(2,2’-bipyridyl)dichloro ruthenium(II)hexahydrate(Ru(bpy)3Cl2)as the fluorescence indicator and iron(III)tetrasulfophthalocyanine(Fe(III)PcTs)as bionic enzyme.A lock-in amplifier was used for detecting the lifetime of the composite oxygen-sensitive film by measuring the phase delay of the sensor head.The different variables affecting the sensor performance were evaluated and optimized.Under the optimal conditions(i e,pH 6.0,25℃,Fe(III)PcTs concentration of 5.0×10^-5 mol/L),the linear detection range,detection limit and response time of the fiber optic sensor are 3.0×10^-7-9.0×10^-5 mol/L,4.8×10^-8 mol/L(S/N=3),and 220 s,respectively.The sensor displays high selectivity,good repeatability and stability,which have good potentials in analyzing DCP concentration in practical water samples.展开更多
The structure, electrical transport, and optical properties of GaSe films fabricated by means of radio-frequency (RF) magnetron sputtering in Ar were investigated. The as-sputtered GaSe films were amorphous, and their...The structure, electrical transport, and optical properties of GaSe films fabricated by means of radio-frequency (RF) magnetron sputtering in Ar were investigated. The as-sputtered GaSe films were amorphous, and their optical energy gap Eg are 1.9~2.6 eV. The effect of the synthesis conditions on the optical and electrical properties of the GaSe films has also been studied展开更多
We quantitatively investigate the third-order optical nonlinear response of Co-doped ZnO thin films prepared by magnetron sputtering using the Z-scan method. The two-photon absorption and optical Kerr effect are revea...We quantitatively investigate the third-order optical nonlinear response of Co-doped ZnO thin films prepared by magnetron sputtering using the Z-scan method. The two-photon absorption and optical Kerr effect are revealed to contribute to the third-order nonlinear response of the Co-doped ZnO films. The nonlinear absorption coefficient β is determined to be approximately 8.8 × 10-5 cm/W and the third-order nonlinear susceptibility X(3) is 2.93 × 10-6 esu. The defect-associated energy levels within the band gap are suggested to be responsible for the enhanced nonlinear response observed in Co-doped ZnO films.展开更多
Structural and optical properties of nanometric titanium oxide(TixOy) films obtained by cathodic arc plasma deposition were investigated. Phase analysis by x-ray diffraction and Fouriertransform infrared spectroscop...Structural and optical properties of nanometric titanium oxide(TixOy) films obtained by cathodic arc plasma deposition were investigated. Phase analysis by x-ray diffraction and Fouriertransform infrared spectroscopy showed the presence of anatase, rutile, Ti_2O_3, Ti_4O_7 and amorphous phases. Scanning electron microscopy images showed well-developed surface morphology with nano-patterns. Spectroscopic ellipsometry revealed film thicknesses of 53 and50 nm, variable refractive indices dependent on the light wavelength and close to zero extinction coefficients for wavelengths higher than 500 nm. On the basis of ultraviolet–visible spectroscopy data and using the Tauc equation, band gap values for direct and indirect electron transitions were determined.展开更多
Azobenzene polymer films doped with and without Ag nanoparticles are prepared. The photoinduced reorientation process is investigated by using an Nd:YVO4 pump beam at 532 nm and a low semiconductor laser beam at 650 ...Azobenzene polymer films doped with and without Ag nanoparticles are prepared. The photoinduced reorientation process is investigated by using an Nd:YVO4 pump beam at 532 nm and a low semiconductor laser beam at 650 nm. The reorientation rate of azo polymer films is enhanced in the presence of Ag nanoparticles, and the rate of the azo polymer film with Ag concentration of 2.2 μg/ml is larger than that of the azo polymer films with Ag concentrations of 1.1 μg/ml and 4.4 μg/ml. The third-order nonlinear optical properties of the Ag/azo composite film are obtained by the Z-scan technique at a wavelength of 532 nm, and the measured nonlinear refractive index is 9.258×10-9 esu. It is shown that the main mechanisms involved in the large nonlinear optical responses come from the local field enhancement of Ag nanoparticles and the nonlinear effect of the azo polymer matrix.展开更多
Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2&...Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2·2H_2O] as precursor and isopropanol and monoethanolamine(MEA) as solvent and stabilizer, respectively. The molar ratio of zinc acetate dehydrate to MEA is 1.0. X-ray diffraction, ultraviolet-visible spectroscopy and photoluminescence spectroscopy are employed to investigate the effect of solution concentration on the structural and optical properties of the ZnO thin films. The obtained results of all thin films are discussed in detail and are compared with other experimental data.展开更多
The optical reflectance and transmittance spectra in the wavelength range of 300-2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 an...The optical reflectance and transmittance spectra in the wavelength range of 300-2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 and 600°C.The values of the cross point between the curves of the real and imaginary parts of the optical conductivity ɑ_1 and ɑ_1 with energy axis of films exhibit values that correspond to optical gaps and are about 3.25-3.3 eV. The maxima of peaks in plots dR/dλ and dT/dλ versus wavelength of films exhibit optical gaps at about 3.12-3.25 eV.The values of the fundamental indirect band gap obtained from the Tauc model are at about 3.14-3.2 eV. It can be seen that films annealed at 600°C have the minimum indirect optical band gap at about 3.15 eV. The films annealed at 600°C have Urbach's energy minimum of 1.38 eV and hence have minimum disorder. The dispersion energy d of films annealed at 500°C has the minimum value of 43 eV.展开更多
CdSe films are of great interest for use in thin film photoelectric devices. A simple chemical precipitation method is adopted for the first time to synthesise CdSe powder. Films on glass obtained at different substra...CdSe films are of great interest for use in thin film photoelectric devices. A simple chemical precipitation method is adopted for the first time to synthesise CdSe powder. Films on glass obtained at different substrate temperatures TS such as 300, 373, 423 and 473 K have been characterised by X-ray diffraction, optical absorption and Hall measurements.展开更多
Zn_(0.8)Cd_(0.2)O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the p...Zn_(0.8)Cd_(0.2)O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_(0.8)Cd_(0.2)O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.展开更多
WNxfilms are deposited by reactive chemical vapor deposition at different amounts of nitrogen in gas mixtures.Experimental data demonstrate that nitrogen amount has a strong effect on microstructure, phase formation,t...WNxfilms are deposited by reactive chemical vapor deposition at different amounts of nitrogen in gas mixtures.Experimental data demonstrate that nitrogen amount has a strong effect on microstructure, phase formation,texture morphology, mechanical and optical properties of the WNxfilms. With increasing nitrogen a phase transition from a single WNxphase with low crystallinity structure to a well-mixed crystallized hexagonal WNxand face-centered-cubic W2N phases appears. Relatively smooth morphology at lower N2concentration changes to a really smooth morphology and then granular with coarse surface at higher N2concentration. The SEM observation clearly shows a columnar structure at lower N2concentration and a dense nanoplates one for higher nitrogen content. The hardness of WNxthin films mainly depends on the film microstructure. The absorbance peak position shifts to shorter wavelength continuously with increasing nitrogen amount and decreasing particle size.展开更多
Fluorinated amorphous carbon films were deposited using microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CF4 and C8H6 as source gas and were annealed in nitrogen ambience for the...Fluorinated amorphous carbon films were deposited using microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CF4 and C8H6 as source gas and were annealed in nitrogen ambience for the investigating of their thermal stability .The relative concentration of C=C bond and optical bandgap were obtained by Fourier Transform Infrared (FTIR) spectroscopy and Ultraviolet-Visible (UV-VIS ) spectrum, respectively. It has been demonstrated that there is a close relationship between relative concentration of C=C bond and optical bandgap, and the films deposited at a higher microwave power have a lower optical bandgap and a better thermal stability.展开更多
From different reports, it (AZO) and indium-doped including usage areas. We nanocrystalline films with is realized that there is a need to consider all sides of aluminum-doped zinc oxide zinc oxide (IZO) thin film...From different reports, it (AZO) and indium-doped including usage areas. We nanocrystalline films with is realized that there is a need to consider all sides of aluminum-doped zinc oxide zinc oxide (IZO) thin films with their optical, luminescence and surface properties establish an assessment to carry out further information to summarize AZO and IZO impact of the layer number.展开更多
Nanoporous silica films were prepared by sol-gel process with base, acid and base/acid two-step catalysis.Transmission electron microscope (TEM) and particle size analyzer were used to characterize the microstructur...Nanoporous silica films were prepared by sol-gel process with base, acid and base/acid two-step catalysis.Transmission electron microscope (TEM) and particle size analyzer were used to characterize the microstructure and the particle size distribution of the sols. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectroscopic ellipsometer were used to characterize the surface microstructure and the optical properties of the silica films. Stability of the sols during long-term storage was investigated. Moreover,the dispersion relation of the optical constants of the silica films, and the control of the microstructure and properties of the films by changing the catalysis conditions during sol-gel process were also discussed.展开更多
Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p b...Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance.展开更多
A slanted columnar TiO2 sculptured anisotropic thin film (ATF) is prepared via the glancing angle deposition technique and used as the phase retardation plate. The tilted nanocolumn microstructures of thin film indu...A slanted columnar TiO2 sculptured anisotropic thin film (ATF) is prepared via the glancing angle deposition technique and used as the phase retardation plate. The tilted nanocolumn microstructures of thin film induce the optical anisotropy. With the biaxial birefringent model, the optical constants dispersion equations of TiO2 ATF are derived by fitting the transmittance spectra for s-and p-polarized waves measured at normal and oblique incidence within 400 nm–1200 nm. The phase shift of polarized light after reflection and/or transmission through the TiO2 ATF is analyzed with the characteristic matrix employing the extracted structure parameters. The theoretical studies reasonably well accord with the experimental results measured with spectroscopic ellipsometry. In addition, the dependences of the phase shift on the coating physical thickness and oblique incidence angle are also discussed. Birefringence of the biaxial ATF provides a sophisticated phase modulation by varying incidence angles over a broad range to have a wide-angle phase shift.展开更多
Al-doped ZnO(AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures(P_(O2)).The effect of P_(O2) on the crystal structure,preferred orientation as well a...Al-doped ZnO(AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures(P_(O2)).The effect of P_(O2) on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_(O2).At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the(0001) plane parallel to the substrate surface,i e,the epitaxial relationship was AZO(000 1) // A1_2O_3(000 1).With increasing P_(O2),the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.展开更多
We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain...We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain model, was included in a complementary manner to lattice relaxation. Density functional theory as well as a hybrid functional method based on a plane wave basis set was employed to calculate the lattice structure, elastic constants, electronic properties and optical properties of perovskite BaZrO3. The lattice parameter c exhibited a clear linear dependence on the imposed in-plane strain, but the Poisson's ratio caused by internal relaxation was smaller than the elastic deformation, indicating an "inelastic" or "plastic" relaxation manner caused by the introduction of internal relaxation. As a result, the related electronic and optical properties of perovskite BaZrO3 were also strongly affected by the in-plane strain, which revealed an effective way to adjust the properties of perovskite BaZrO3 via internal relaxation.展开更多
Since about 10 years, there is a controversy about physics and chemistry of GdN between stoichiometric (tested) large single crystals and off-stoichiometric thin films. GdN single crystals are anti-ferromagnetic for a...Since about 10 years, there is a controversy about physics and chemistry of GdN between stoichiometric (tested) large single crystals and off-stoichiometric thin films. GdN single crystals are anti-ferromagnetic for applied magnetic fields of only 10 Oe, become ferromagnetic for excess electrons and larger magnetic fields. They are semimetallic. Thin films are ferromagnetic and semiconductors. Over the time, many experiments have been performed on both systems and the physics in each system is consistent. Band structure computations either yield ferromagnetic semimetals or ferromagnetic semiconducting thin films. There seems to be two incompatible worlds, those of single crystals and those of thin films. In the present work, the author compares directly the various measurements and calculations and gives reasons for their different results.展开更多
We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron tran...We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10^-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200/times 200 ×μm^2 square mesa.展开更多
We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The roomtemperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown o...We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The roomtemperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well (MQW), respectively.展开更多
基金Funded by the National Natural Science Foundation of China(No.61205062)the Scientific Research Foundation for Doctor of University(No.2019Y02)。
文摘A novel fiber optic sensor based on optical composite oxygen-sensitive film was developed for determination of 2,4-dichlorophenol(DCP).The optical composite oxygen-sensitive film consists of tris(2,2’-bipyridyl)dichloro ruthenium(II)hexahydrate(Ru(bpy)3Cl2)as the fluorescence indicator and iron(III)tetrasulfophthalocyanine(Fe(III)PcTs)as bionic enzyme.A lock-in amplifier was used for detecting the lifetime of the composite oxygen-sensitive film by measuring the phase delay of the sensor head.The different variables affecting the sensor performance were evaluated and optimized.Under the optimal conditions(i e,pH 6.0,25℃,Fe(III)PcTs concentration of 5.0×10^-5 mol/L),the linear detection range,detection limit and response time of the fiber optic sensor are 3.0×10^-7-9.0×10^-5 mol/L,4.8×10^-8 mol/L(S/N=3),and 220 s,respectively.The sensor displays high selectivity,good repeatability and stability,which have good potentials in analyzing DCP concentration in practical water samples.
文摘The structure, electrical transport, and optical properties of GaSe films fabricated by means of radio-frequency (RF) magnetron sputtering in Ar were investigated. The as-sputtered GaSe films were amorphous, and their optical energy gap Eg are 1.9~2.6 eV. The effect of the synthesis conditions on the optical and electrical properties of the GaSe films has also been studied
基金Supported by National Basic Research Program of China under Grant Nos 2011CB922200 and 2013CB922303
文摘We quantitatively investigate the third-order optical nonlinear response of Co-doped ZnO thin films prepared by magnetron sputtering using the Z-scan method. The two-photon absorption and optical Kerr effect are revealed to contribute to the third-order nonlinear response of the Co-doped ZnO films. The nonlinear absorption coefficient β is determined to be approximately 8.8 × 10-5 cm/W and the third-order nonlinear susceptibility X(3) is 2.93 × 10-6 esu. The defect-associated energy levels within the band gap are suggested to be responsible for the enhanced nonlinear response observed in Co-doped ZnO films.
基金by the Ministry of Education,Science and Technological Development of the Republic of Serbia(grant 172026)COST action MP1306
文摘Structural and optical properties of nanometric titanium oxide(TixOy) films obtained by cathodic arc plasma deposition were investigated. Phase analysis by x-ray diffraction and Fouriertransform infrared spectroscopy showed the presence of anatase, rutile, Ti_2O_3, Ti_4O_7 and amorphous phases. Scanning electron microscopy images showed well-developed surface morphology with nano-patterns. Spectroscopic ellipsometry revealed film thicknesses of 53 and50 nm, variable refractive indices dependent on the light wavelength and close to zero extinction coefficients for wavelengths higher than 500 nm. On the basis of ultraviolet–visible spectroscopy data and using the Tauc equation, band gap values for direct and indirect electron transitions were determined.
文摘Azobenzene polymer films doped with and without Ag nanoparticles are prepared. The photoinduced reorientation process is investigated by using an Nd:YVO4 pump beam at 532 nm and a low semiconductor laser beam at 650 nm. The reorientation rate of azo polymer films is enhanced in the presence of Ag nanoparticles, and the rate of the azo polymer film with Ag concentration of 2.2 μg/ml is larger than that of the azo polymer films with Ag concentrations of 1.1 μg/ml and 4.4 μg/ml. The third-order nonlinear optical properties of the Ag/azo composite film are obtained by the Z-scan technique at a wavelength of 532 nm, and the measured nonlinear refractive index is 9.258×10-9 esu. It is shown that the main mechanisms involved in the large nonlinear optical responses come from the local field enhancement of Ag nanoparticles and the nonlinear effect of the azo polymer matrix.
文摘Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2·2H_2O] as precursor and isopropanol and monoethanolamine(MEA) as solvent and stabilizer, respectively. The molar ratio of zinc acetate dehydrate to MEA is 1.0. X-ray diffraction, ultraviolet-visible spectroscopy and photoluminescence spectroscopy are employed to investigate the effect of solution concentration on the structural and optical properties of the ZnO thin films. The obtained results of all thin films are discussed in detail and are compared with other experimental data.
文摘The optical reflectance and transmittance spectra in the wavelength range of 300-2500 nm are used to compute the absorption coefficient of zinc oxide films annealed at different post-annealing temperatures 400, 500 and 600°C.The values of the cross point between the curves of the real and imaginary parts of the optical conductivity ɑ_1 and ɑ_1 with energy axis of films exhibit values that correspond to optical gaps and are about 3.25-3.3 eV. The maxima of peaks in plots dR/dλ and dT/dλ versus wavelength of films exhibit optical gaps at about 3.12-3.25 eV.The values of the fundamental indirect band gap obtained from the Tauc model are at about 3.14-3.2 eV. It can be seen that films annealed at 600°C have the minimum indirect optical band gap at about 3.15 eV. The films annealed at 600°C have Urbach's energy minimum of 1.38 eV and hence have minimum disorder. The dispersion energy d of films annealed at 500°C has the minimum value of 43 eV.
文摘CdSe films are of great interest for use in thin film photoelectric devices. A simple chemical precipitation method is adopted for the first time to synthesise CdSe powder. Films on glass obtained at different substrate temperatures TS such as 300, 373, 423 and 473 K have been characterised by X-ray diffraction, optical absorption and Hall measurements.
基金Funded by the National Natural Science Foundation of China(No.51461135004)the Doctoral Fund of Ministry of Education Priority Development Project(No.20130143130002)+1 种基金the Key Technology Innovation Project of Hubei Province(2013AAA005)the Scientific Leadership training Program of Hubei Province
文摘Zn_(0.8)Cd_(0.2)O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_(0.8)Cd_(0.2)O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.
文摘WNxfilms are deposited by reactive chemical vapor deposition at different amounts of nitrogen in gas mixtures.Experimental data demonstrate that nitrogen amount has a strong effect on microstructure, phase formation,texture morphology, mechanical and optical properties of the WNxfilms. With increasing nitrogen a phase transition from a single WNxphase with low crystallinity structure to a well-mixed crystallized hexagonal WNxand face-centered-cubic W2N phases appears. Relatively smooth morphology at lower N2concentration changes to a really smooth morphology and then granular with coarse surface at higher N2concentration. The SEM observation clearly shows a columnar structure at lower N2concentration and a dense nanoplates one for higher nitrogen content. The hardness of WNxthin films mainly depends on the film microstructure. The absorbance peak position shifts to shorter wavelength continuously with increasing nitrogen amount and decreasing particle size.
文摘Fluorinated amorphous carbon films were deposited using microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CF4 and C8H6 as source gas and were annealed in nitrogen ambience for the investigating of their thermal stability .The relative concentration of C=C bond and optical bandgap were obtained by Fourier Transform Infrared (FTIR) spectroscopy and Ultraviolet-Visible (UV-VIS ) spectrum, respectively. It has been demonstrated that there is a close relationship between relative concentration of C=C bond and optical bandgap, and the films deposited at a higher microwave power have a lower optical bandgap and a better thermal stability.
文摘From different reports, it (AZO) and indium-doped including usage areas. We nanocrystalline films with is realized that there is a need to consider all sides of aluminum-doped zinc oxide zinc oxide (IZO) thin films with their optical, luminescence and surface properties establish an assessment to carry out further information to summarize AZO and IZO impact of the layer number.
基金the National Natural Science Foundation of China(Grant No.20133040)the Chinese National Foundation of High Technology(2002AA842052)+1 种基金the Shanghai Nanotechnology Promotion Center(0352nm022,0352nm056)the Shanghai International Cooperation Program and Trans-Century Training Programme Foundation for the Talents by the State Education Commission.
文摘Nanoporous silica films were prepared by sol-gel process with base, acid and base/acid two-step catalysis.Transmission electron microscope (TEM) and particle size analyzer were used to characterize the microstructure and the particle size distribution of the sols. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectroscopic ellipsometer were used to characterize the surface microstructure and the optical properties of the silica films. Stability of the sols during long-term storage was investigated. Moreover,the dispersion relation of the optical constants of the silica films, and the control of the microstructure and properties of the films by changing the catalysis conditions during sol-gel process were also discussed.
基金the National Natural Science Foundation of China(NSFC)for financial support(Grant No.10074063)The Chinese Academy of Scicences(No.KJ952-S1-418)supported by 100-Talent Research Program of The Chinese Academy of Sciences.
文摘Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance.
基金Project supported by the National Natural Science Foundation of China(Grant No.61205211)
文摘A slanted columnar TiO2 sculptured anisotropic thin film (ATF) is prepared via the glancing angle deposition technique and used as the phase retardation plate. The tilted nanocolumn microstructures of thin film induce the optical anisotropy. With the biaxial birefringent model, the optical constants dispersion equations of TiO2 ATF are derived by fitting the transmittance spectra for s-and p-polarized waves measured at normal and oblique incidence within 400 nm–1200 nm. The phase shift of polarized light after reflection and/or transmission through the TiO2 ATF is analyzed with the characteristic matrix employing the extracted structure parameters. The theoretical studies reasonably well accord with the experimental results measured with spectroscopic ellipsometry. In addition, the dependences of the phase shift on the coating physical thickness and oblique incidence angle are also discussed. Birefringence of the biaxial ATF provides a sophisticated phase modulation by varying incidence angles over a broad range to have a wide-angle phase shift.
基金Funded by National Natural Science Foundation of China(Nos.51272195,51521001)111 project(No.B13035)+1 种基金Hubei Provincial National Natural Science Foundation(No.2015CFB724)Fundamental Research Funds for the Central Universities(Nos.2013-ZD-4,2014-KF-3)
文摘Al-doped ZnO(AZO) thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures(P_(O2)).The effect of P_(O2) on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_(O2).At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the(0001) plane parallel to the substrate surface,i e,the epitaxial relationship was AZO(000 1) // A1_2O_3(000 1).With increasing P_(O2),the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.
基金Funded by the National Natural Science Foundation of China(No.51502179)the Colleges and Universities in Hebei Province Science and Technology Research Project(No.YQ2014033)the Hebei Key Discipline Construction Project(B2012210004 and E2013210038)
文摘We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain model, was included in a complementary manner to lattice relaxation. Density functional theory as well as a hybrid functional method based on a plane wave basis set was employed to calculate the lattice structure, elastic constants, electronic properties and optical properties of perovskite BaZrO3. The lattice parameter c exhibited a clear linear dependence on the imposed in-plane strain, but the Poisson's ratio caused by internal relaxation was smaller than the elastic deformation, indicating an "inelastic" or "plastic" relaxation manner caused by the introduction of internal relaxation. As a result, the related electronic and optical properties of perovskite BaZrO3 were also strongly affected by the in-plane strain, which revealed an effective way to adjust the properties of perovskite BaZrO3 via internal relaxation.
文摘Since about 10 years, there is a controversy about physics and chemistry of GdN between stoichiometric (tested) large single crystals and off-stoichiometric thin films. GdN single crystals are anti-ferromagnetic for applied magnetic fields of only 10 Oe, become ferromagnetic for excess electrons and larger magnetic fields. They are semimetallic. Thin films are ferromagnetic and semiconductors. Over the time, many experiments have been performed on both systems and the physics in each system is consistent. Band structure computations either yield ferromagnetic semimetals or ferromagnetic semiconducting thin films. There seems to be two incompatible worlds, those of single crystals and those of thin films. In the present work, the author compares directly the various measurements and calculations and gives reasons for their different results.
基金Supported by the National Science Fund for Distinguished Young Scholars of China under Grant No 60525406, the National Natural Science Foundation of China under Grant Nos 60736031, 60806018, 60906026 and 10990100, the National Basic Research Program of China under Grant No 2006CB604903, and the National High-tcch R&D Program of China under Grant Nos 2007AA03Z446 and 2009AA03Z403.
文摘We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10^-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200/times 200 ×μm^2 square mesa.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60976045, 60506001, 60776047 and 60836003, and the National Basic Research Program of China under Grant No 2007CB936700.
文摘We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The roomtemperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well (MQW), respectively.