马铃薯淀粉-壳聚糖复合膜对冬枣的保鲜研究

主要研究不同比例的马铃薯淀粉与壳聚糖复合膜对冬枣的保鲜效果,通过定期对硬度、VC、总糖及总酸含量进行测定,结果表明:可食性保鲜膜对冬枣的保鲜效果优于对照组,1%壳聚糖+1%马铃薯淀粉复合膜的保鲜效果最佳。

铝诱导层交换超薄多晶硅薄膜制备及压阻特性

超薄多晶硅薄膜具有优异的压敏特性。铝诱导层交换(ALILE)制备多晶硅薄膜具有成膜温度低薄膜性能优良等特点。利用ALILE方法在玻璃基底上低温条件下制备了50nm超薄多晶硅(poly-Si)薄膜,并对薄膜微观结构及压阻特性进行了研究。Raman光谱在521cm-1出现尖锐、对称的特征峰,表明超薄多晶硅薄膜晶化状态良好。此外,在拉曼光谱480cm-1处没有明显出现a-Si的Raman特征峰也说明制备的polySi薄膜样品完全结晶;XRD光谱表明ALILE制备薄膜在(111)和(220)晶向择优生长,晶粒尺寸约5μm;霍尔效应测试结果表明:ALILE制备薄膜为p型掺杂,空穴浓度为9×1018~6×1019 cm-3;压阻特性研究表明:ALILE超薄多晶硅薄膜应变系数(GF)达到了60以上,且与薄膜厚度相关;应变温度相关系数(TCGF)在-0.17~0%℃范围内;电阻温度相关系数(TCR)在-0.2^-0.1%℃范围内。ALILE超薄多晶硅薄膜具有GF大、TCGF小和TCR小等特点。因此,有望在压力传感器领域得到应用。

p-Si TFT栅绝缘层用SiN薄膜的制备与研究

以NH3和SiH4为反应源气体，采用射频等离子体增强化学气相沉积（RF-PECVD）法在多晶硅（P-Si）衬底上沉积了一系列SiN薄膜并进行了相关性能测试。系统地分析讨论了反应源气体流量比和反应压强对siN薄膜介电常数、电学性能及界面特性的影响，在制备高质量的P-Si TFT栅绝缘层用SiN薄膜方面具有重要的参考价值。

Characterization of CulnS2 Thin Films with Different Cu/In Ratio

Thin films of CuInS2 were grown on glass reaction method with different [Cu]/[In] substrate by successive ionic layer adsorption and ratios and annealed at 400℃ for 30 rain. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In] ratios. The electrical resistivity of CuInS~ of thin films was determined using a direct current- two probe method in the temperature range of 300-470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS2.