First‑principles study on electronic structure,optical and magnetic properties of rare earth elements X(X=Sc,Y,La,Ce,Eu)doped with two‑dimensional GaSe

The electronic structure,magnetic,and optical properties of two-dimensional(2D)GaSe doped with rare earth elements X(X=Sc,Y,La,Ce,Eu)were calculated using the first-principles plane wave method based on den-sity functional theory.The results show that intrinsic 2D GaSe is a p-type nonmagnetic semiconductor with an indi-rect bandgap of 2.6611 eV.The spin-up and spin-down channels of Sc-,Y-,and La-doped 2D GaSe are symmetric,they are non-magnetic semiconductors.The magnetic moments of Ce-and Eu-doped 2D GaSe are 0.908μ_(B)and 7.163μ_(B),which are magnetic semiconductors.Impurity energy levels appear in both spin-up and spin-down chan-nels of Eu-doped 2D GaSe,which enhances the probability of electron transition.Compared with intrinsic 2D GaSe,the static dielectric constant of the doped 2D GaSe increases,and the polarization ability is strengthened.The ab-sorption spectrum of the doped 2D GaSe shifts in the low-energy direction,and the red-shift phenomenon occurs,which extends the absorption spectral range.The optical reflection coefficient of the doped 2D GaSe is improved in the low energy region,and the improvement of Eu-doped 2D GaSe is the most obvious.

First principles calculation of electronic structure, chemical bonding and elastic properties of ultra-incompressible Re_2P

The electronic structures, chemical bonding and elastic properties of the Co2P-type structure phase ultra-incompressible Re2P （orthorhombic phase） were investigated by density-functional theory （DFT） within generalized gradient approximation （GGA）. The calculated energy band structures show that the orthorhombic structure phase Re2P is metallic material. The density of state （DOS） and the partial density of state （PDOS） calculations show that the DOS near the Fermi level is mainly from the Re-5d state. Population analysis suggests that the chemical bonding in Re2P has predominantly covalent character with mixed covalent-ionic character. Basic physical properties, such as lattice constant, bulk modulus, shear modulus, and elastic constants Cij, were calculated. The elastic modulus and Poisson ratio were also predicted. The results show that the Co2P-type structure phase Re2P is mechanically stable and behaves in a brittle manner.

First-principles Study on the Electronic Structure of Novel Titanium Yttrium Mixed-metal Nitride Clusterfullerene

We present a first-principles study on the geometric, vibrational and electronic properties of a novel Y-based non-scandium mixed-metal nitride clusterfullerene （TiY2N@C80）. Theoretical results indicate that the fundamental electronic properties of TiY2N@C80 are similar to that of TiSc2N@C80, but dramatically different from that of ScaN@C800 and YaN@C80 molecules. We find that the magnetism of TiY2N@C80 is quenched by carrier doping. The rotation energy barrier of the TiY2N cluster in C80 cage was obviously increased by exohedral chemical modification with pyrrolidine monoadduct.

Electronic Structure Magnetic Properties and Optical Properties of Co-doped AIN from First Principles

The electronic structure, magnetic properties, and optical properties of Co-doped AIN are investigated based upon the Perdew-Burke-Ernzerhof form of generalized gradient approximation within the density functional theory. The band gaps narrowing of AI1-x Cox N are found with the increase of Co concentrations. The analyses of the band structures and density of states show that AI1-xCoxN alloys exhibit a halfometallie character. Moreover, we have succeeded in demonstrating that Co doped AIN system in x = 0.125 is always antiferromagnetie, which is in good agreement with the experimental results. Besides, it is shown that the insertion of Co atom leads to redshift of the optical absorption edge. Finally, the optical constants of pure A1N and AI1-xCoxN alloy, such as loss function, refractive index and reflectivity, are discussed.

First-principles Study of Electronic Structures,Elastic Properties and Thermodynamics of the Binary Intermetallics in Mg-Zn-Re-Zr Alloy

The electronic structures,elastic properties and thermodynamics of MgZn_2,Mg_2Y and Mg_2 La have been determined from the first-principle calculations.The calculated heats of formation and cohesive energies show that Mg_2La has the strongest alloying ability and structural stability.The structural stability mechanism is also explained through the electronic structures of these phases.The ionicity and metallicity of the phases are estimated.The elastic constants are calculated;the bulk moduli,shear moduli.Young's moduli,Poisson's ratio value and elastic anisotropy are derived:and the brittleness.plasticity and anisotropy of these phases are discussed.Gibbs free energy,Debye temperature and heat capacity are calculated and discussed.

First-principles calculation of electronic structure of Mg_xZn_(1-x)O codoped with aluminium and nitrogen

Aiming at developing p-type semiconductors and modulating the band gap for photoelectronic devices and band engineering, we present the ab initio numerical simulation of the effect of codoping ZnO with Al, N and Mg on the crystal lattice and electronic structure. The simulations are based on the Perdew-Burke-Ernzerhof generalised-gradient approximation in density functional theory. Results indicate that electrons close to the Fermi level transfer effectively when Al, Mg, and N replace Zn and O atoms, and the theoretical results were consistent with the experiments. The addition of Mg leads to the variation of crystal lattice, expanse of energy band, and change of band gap. These unusual properties are explained in terms of the computed electronic structure, and the results show promise for the development of next-generation photoconducting devices in optoelectronic information science and technology.

First principles study on electronic structure and optical properties of novel Na-hP4 high pressure phase

The electronic structure and optical properties of novel Na-hP4 high pressure phase at different pressures(260,320,400 and 600 GPa)were investigated by the density functional theory(DFT)with the generalized gradient approximation(GGA)for the exchange and correlation energy.The band structure along the higher symmetry axes in the Brillouin zone,the density of states(DOS) and the partial density of states(PDOS)were presented.The band gap increases and the energy band expands to some extent with the pressure increasing.The dielectric function,reflectivity,energy-loss function,optical absorption coefficient,optical conductivity, refractive index and extinction coefficient were calculated for discussing the optical properties of Na-hP4 high pressure phase at different pressures.

First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO_3

The electronic structure,including band structure,density of states （DOS）, and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory. The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO3 with x = 0. 125 and the system shows metallic behavior. In addition, the DOS moves towards low energy and the optical band gap is broadened. The wide band gap and the low density of the states in the conduction band result in the transparency of the films.

Electronic structure and optical properties of Mg_xZn_(1-x)S bulk crystal using first-principles calculations

We perform the first-principles calculations within the framework of density functional theory to determine the elec- tronic structure and optical properties of MgxZnl-xS bulk crystal. The results indicate that the electronic structure and optical properties of MgxZnl_xS bulk crystal are sensitive to the Mg impurity composition. In particular, the MgxZnl-xS bulk crystal displays a direct band structure and the band gap increases from 2.05 eV to 2.91 eV with Mg dopant compo- sition value x increasing from 0 to 0.024. The S 3p electrons dominate the top of valence band, while the Zn 4s electrons and Zn 3p electrons occupy the bottom of conduction band in MgxZnl_xS bulk crystal. Moreover, the dielectric constant decreases and the optical absorption peak obviously has a blue shift. The calculated results provide important theoretical guidance for the applications of MgxZn1-xS bulk crystal in optical detectors.

Electronic structures and thermoelectric properties of solid solutions CuGa_(1-x) In_xTe_2 : A first-principles study

The electronic structures of solid solutions CuGal_xlnxTe2 are systematically investigated using the full-potential all-electron linearized augmented plane wave method. The calculated lattice parameters almost linearly increase with the increase of the In composition, which are in good agreement with the available experimental results. The calculated band structures with the modified Becke-Johnson potential show that all solid solutions are direct gap conductors. The band gap decreases linearly with In composition increasing. Based on the electronic structure calculated, we investigate the thermoelectric properties by the semi-classical Boltzmann transport theory. The results suggest that when Ga is replaced by In, the bipolar effect of Seebeck coefficient S becomes very obvious. The Seebeck coefficient even changes its sign from positive to negative for p-type doping at low carrier concentrations. The optimal p-type doping concentrations have been estimated based on the predicted maximum values of the power factor divided by the scattering time.

Electronic and optical properties of GaN–MoS2 heterostructure from first-principles calculations

Heterostructures(HSs)have attracted significant attention because of their interlayer van der Waals interactions.The electronic structures and optical properties of stacked GaN-MoS2 HSs under strain have been explored in this work using density functional theory.The results indicate that the direct band gap(1.95 e V)of the Ga N-MoS2 HS is lower than the individual band gaps of both the GaN layer(3.48 e V)and the MoS2 layer(2.03 eV)based on HSE06 hybrid functional calculations.Specifically,the GaN-MoS2 HS is a typical type-II band HS semiconductor that provides an effective approach to enhance the charge separation efficiency for improved photocatalytic degradation activity and water splitting efficiency.Under tensile or compressive strain,the direct band gap of the GaN-MoS2 HS undergoes redshifts.Additionally,the GaN-MoS2 HS maintains its direct band gap semiconductor behavior even when the tensile or compressive strain reaches 5%or-5%.Therefore,the results reported above can be used to expand the application of Ga N-MoS2 HSs to photovoltaic cells and photocatalysts.

Electronic Structure and Transport Coefficients of the Thermoelectric Materials Bi_2Te_3 from First-principles Calculations

The electronic structures of bulk Bi_2Te_3 crystals were investigated by the first-principles calculations.The transport coefficients including Seeback coefficient and power factor were then calculated by the Boltzmann theory,and further evaluated as a function of chemical potential assuming a rigid band picture.The results suggest that p-type doping in the Bi_2Te_3 compound may be more favorable than n-type doping.From this analysis results,doping effects on a material will exhibit high ZT.Furthermore,we can also find the right doping concentration to produce more efficient materials,and present the ＂advantage filling element map＂ in detail.

First principles study on the electronic structure and magnetism of Fe1-xCoxSi alloys

Electronic and magnetic properties of Fe1-xCoxSi alloys were investigated by using a full-potential linear augmented-plane-wave method based on density functional theory. Electronic structure calculation demonstrates that half-metallic property appears in the Fe-rich region of 0 〈 x ≤ 0.25, while the alloys turn out to be a magnetic metal for x 〉 0.25. The concentration dependence of the magnetic moment of the alloys can be understood by the fixed Fermi level at minority band in Fe-rich region, as well as at the majority band in Co-rich region. In Fe-rich alloys, the electronic structure and the magnetic properties at Fe site depend mainly on the spin-polarization of nearest neighbouring Co atoms, while in Co-rich alloys, these features at Co site arise mainly from the neighbours of Fe atoms.

Electronic structures and magnetocrystalline anisotropy energies of ordered Co_(1-x)Ni_x alloys:a first principles study

The electronic structures and magnetocrystalline anisotropy （MA） of ordered hexagonal close-packed （hcp） Co1-xNix alloys are studied using the full-potential linear-augmented-plane-wave （FLAPW） method with general- ized gradient approximation （CGA）. Great changes of magnetocrystalline anisotropy energy （MAE） are gained with different Ni compositions. Also, in-plane magnetocrystalline anisotropy is obtained for Co15Ni in which the Snoek＇s limit is exceeded. It is found that the changes of the symmetry of the crystal field on Ni induce small variations in band structures around the Fermi level under different compositions, which plays an important role in modulating the magnetization direction, where the hybridization between Co-3d and Ni-3d orbits is of special importance in deciding the magnetocrystalline anisotropy of itinerant states. The rigid-band model is inapplicable to explain the evolution of magnetocrystalline anisotropy energy with Ni composition, and it is also inadequate to predict the magnetocrystalline anisotropy energy through the anisotropy of the orbital magnetic moment.

First principles study of electronic structure, chemical bonding and elastic properties of BiOCuS

The electronic structures, chemical bonding and elastic properties of the tetragonal phase BiOCuS were investigated by using density-functional theory （DFT） within generalized gradient approximation （GGA）. The calculated energy band structures show that the tetragonal phase BiOCuS is an indirect semiconductor with the calculated band gap of about 0.503 eV. The density of states （DOS） and the partial density of states （PDOS） calculations show that the DOS near the Fermi level is mainly from the Cu-3d state. Population analysis suggests that the chemical bonding in BiOCuS has predominantly ionic character with mixed covalent-ionic character. Basic physical properties, such as lattice constant, bulk modulus, shear modulus, elastic constants, were calculated. The elastic modulus and Poisson ratio were also predicted. The results show that tetragonal phase BiOCuS is mechanically stable and behaves in a ductile manner.

First-Principles Investigation of Energetics and Electronic Structures of Ni and Sc Co-Doped MgH2

First-principles calculations were used to study the energetics and electronic structures of Ni and Sc co-doped MgH2 system. The preferential positions for dopants were determined by the minimal total electronic energy. The results of formation enthalpy indicate that Ni and Sc co-doped MgH2 system is more stable than Ni single-doped system. The hydrogen desorption enthalpies of these two hydrides are investigated. Ni and Sc co-doping can improve the dehydrogenation properties of MgH2. The lowest hydrogen desorption enthalpy of 0.30 eV appears in co-doped system, which is significantly lower than that of Ni doping. The electronic structure analysis illustrates that the hybridization of dopants with Mg and H atom together weakens the Mg-H interaction. And the Mg-H bonds are more susceptible to dissociate by Ni and Sc co-doping because of the reduced magnitude of Mg-H hybridization peaks. These behaviors effectively improve the dehydrogenation properties of Ni and Sc co-doped cases.

First principles study of the electronic structure and photovoltaic properties ofβ-CuGaO2 with MBJ+U approach

Based on the density functional theory,the energy band and electronic structure ofβ-CuGaO2 are calculated by the modified Becke-Johnson plus an on-site Coulomb U(MBJ+U)approach in this paper.The calculated results show that the band gap value ofβ-CuGaO2 obtained by the MBJ+U approach is close to the experimental value.The calculated results of electronic structure indicate that the main properties of the material are determined by the bond between Cu-3 d and O-2p energy levels near the valence band ofβ-CuGaO2,while a weak anti-bond combination is formed mainly by the O-2p energy level and Ga-4 s energy level near the bottom of the conduction band ofβ-CuGaO2.Theβ-CuGaO2 thin film is predicted to hold excellent photovoltaic performance by analysis of the spectroscopic limited maximum efficiency(SLME)method.At the same time,the calculated maximum photoelectric conversion efficiency of the ideal CuGaO2 solar cell is 32.4%.Relevant conclusions can expandβ-CuGaO2 photovoltaic applications.

First-principles study of strain effect on the formation and electronic structures of oxygen vacancy in SrFeO_2

Motivated by recent experimental observations of metallic conduction in the quasi-two-dimensional SrFeO_2, we study the epitaxial strain effect on the formation and electronic structures of oxygen vacancy（Vo） by first-principles calculations.The bulk SrFeO_2 is found to have the G-type antiferromagnetic ordering（G-AFM） at zero strain, which agrees with the experiment. Under compressive strain the bulk SrFeO_2 keeps the G-AFM and has the trend of Mott insulator-metal transition.Different from most of the previous similar work about the strain effect on Vo, both the tensile strain and the compressive strain enhance the Vo formation. It is found that the competitions between the band energies and the electrostatic interactions are the dominant mechanisms in determining the Vo formation. We confirm that the Vo in SrFeO_2 would induce the n-type conductivity where the donor levels are occupied by the delocalized d_（x^2-y^2） electrons. It is suggested that the vanishing of n-type conductivity observed by the Hall measurement on the strained films are caused by the shift of donor levels into the conduction band. These results would provide insightful information for the realization of metallic conduction in SrFeO_2.

First-principles Study on the Electronic Structure and Stability of Mo_(2-x)Cr_xC

This paper deals with the electronic structure and stability of a series of carbides Mo2-xCrxC based on the pseudopotential plane-waves approach of density functional theory and using the generalized gradient approximation(GGA) for the exchange and correlation potential.The calculation results of formation energies demonstrate that the structure Mo2-xCrxC in range of 0≤x≤1.75 is stable under ambient conditions.The formation energies/stabilities of the structures Mo2-xCrxC increase /reduce with enhancing the content of Cr in the structure.Calculated density of state(DOS) show that an increase in the content of Cr dissolving in Mo2-xCrxC crystal cell can lead to the crystal cell volume slightly to shrinkage,TDOS to be elevated at the Fermi level and the peak value of DOS to decrease at the lower energy region from-13.78 to-10.16 eV.Mulliken population analysis explains that the Mo2-xCrxC phase possess the metallic,covalent and ionic bonds.

Effect of Mn doping on mechanical properties and electronic structure of WCoB ternary boride by first-principles calculations

The first-principles calculations are performed to investigate the structural, mechanical property, hardness, and electronic structure of WCoB with 0, 8.33, 16.67, 25, and 33.33 at.% Mn doping content and W_2 CoB_2 with 0, 10, and 20 at.%Mn doping content. The cohesive energy and formation energy indicate that all the structures can retain good structural stability. According to the calculated elastic constants, Mn is responsible for the increase of ductility and Poisson＇s ratio and the decrease of Young＇s modulus, shear modulus, and bulk modulus. By using the population analysis and mechanical properties, the hardness is characterized through using the five hardness models and is found to decrease with the Mn doping content increasing. The calculated electronic structure indicates that the formation of a B–Mn covalent bond and a W–Mn metallic bond contribute to the decreasing of the mechanical properties.