Effect of Mn doping on mechanical properties and electronic structure of WCoB ternary boride by first-principles calculations

The first-principles calculations are performed to investigate the structural, mechanical property, hardness, and electronic structure of WCoB with 0, 8.33, 16.67, 25, and 33.33 at.% Mn doping content and W_2 CoB_2 with 0, 10, and 20 at.%Mn doping content. The cohesive energy and formation energy indicate that all the structures can retain good structural stability. According to the calculated elastic constants, Mn is responsible for the increase of ductility and Poisson＇s ratio and the decrease of Young＇s modulus, shear modulus, and bulk modulus. By using the population analysis and mechanical properties, the hardness is characterized through using the five hardness models and is found to decrease with the Mn doping content increasing. The calculated electronic structure indicates that the formation of a B–Mn covalent bond and a W–Mn metallic bond contribute to the decreasing of the mechanical properties.

First-principles calculation of electronic structure of Mg_xZn_(1-x)O codoped with aluminium and nitrogen

Aiming at developing p-type semiconductors and modulating the band gap for photoelectronic devices and band engineering, we present the ab initio numerical simulation of the effect of codoping ZnO with Al, N and Mg on the crystal lattice and electronic structure. The simulations are based on the Perdew-Burke-Ernzerhof generalised-gradient approximation in density functional theory. Results indicate that electrons close to the Fermi level transfer effectively when Al, Mg, and N replace Zn and O atoms, and the theoretical results were consistent with the experiments. The addition of Mg leads to the variation of crystal lattice, expanse of energy band, and change of band gap. These unusual properties are explained in terms of the computed electronic structure, and the results show promise for the development of next-generation photoconducting devices in optoelectronic information science and technology.

Effect of C doping on the structural and electronic properties of LiFePO_4:A first-principles investigation

Using first-principles calculations within the generalized gradient approximation （GGA） ＋U framework, we inves- tigate the effect of C doping on the structural and electronic properties of LiFePO4. The calculated formation energies indicate that C doped at O sites is energetically favoured, and that C dopants prefer to occupy 03 sites. The band gap of the C doped material is much narrow than that of the undoped one, indicating better electro- conductive properties. To maintain charge balance, the valence of the Fe nearest to C appears as Fe3＋, and it will be helpful to the hopping of electrons.

First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO

The electronic structure and optical properties of pure, C-doped, C~ codoped and C-F-Be cluster- doped ZnO with a wurtzite structure were calculated by using the density functional theory with the plane-wave ultrasoft pseudopotentials method. The results indicate that p-type ZnO can be obtained by C incorporation, and the energy level of Co above the valence band maximum is 0.36 eV. The ionization energy of the complex Zn16O14CF and ZnlsBeO14CF can be reduced to 0.23 and 0.21 eV, individually. These results suggest that the defect complex of ZnlsBeO14CF is a better candidate for p-type ZnO. To make the optical properties clear, we investigated the imaginary part of the complex dielectric function ofundoped and C-F-Be doped ZnO. We found that there is strong absorption in the energy region lower than 2.7 eV for the C-F-Be doped system compared to pure ZnO.

Electronic Structure and Optical-absorption Properties of C-, N-, and S-doped BiOCl: the First-principles Calculations

Impurity formation energy, electronic structure, and photocatalytic properties of C-, N-, or S-doped BiOCl are investigated by density-functional theory plus U calculations(DFT + U). Results show that the doping effect of S is better than that of C or N on the tunable photocatalytic activities of BiOCl. At low concentration, S-doped BiOCl systems are the most stable under Bi-rich growth conditions because of their lower impurity-formation energy. Compared with the electronic structures of S-doped BiOCl, C-or N-doped BiOCl have relatively deeper impurity energy levels appearing in their band gap(except Bi_(36)O_(35)NCl_(36)), which may act as photogenerated carrier-recombination centers and reduce photocatalytic activity. At high concentration, S is substituted on the O lattice site system, whereas some S 3p states mix with the valence band; this mixture leads to an obvious band-gap decrease and continuum-state formation above the valence-band edge of BiOCl. Such activity is advantageous to photochemical catalysis response. Compared with pure Bi OCl and a low-concentration S-doped system, a high-concentration S-doped system shows an obvious redshift on the absorption edge and has better photocatalytic O_2 evolution performance.

First-principles calculation of the electronic band of ZnO doped with C

Using the first-principles approach based upon the density functional theory （DFT）, we have studied the electronic structure of wurtzite ZnO systems doped with C at different sites. When Zn is substituted by C, the system turns from a direct band gap semiconductor into an indirect band gap semiconductor, and donor levels are formed. When O is substituted by C, acceptor levels are formed near the top of the valence band, and thus a p-type transformation of the system is achieved. When the two kinds of substitution coexist, the acceptor levels are compensated for all cases, which is unfavorable for the p-type transformation of the system.

First-principles study of electronic and optical properties in wurtzite Zn_(1-x)Cu_xO

We perform a first-principles simulation to study the electronic and optical properties of wurtzite Zn1-xCuxO. The simulations are based upon the Perdew-Burke-Ernzerhof form of generalised gradient approximation within the density functional theory. Calculations are carried out in different concentrations. With increasing Cu concentration, the band gap of Znl-xCuxO decreases due to the shift of valence band. The imaginary part of the dielectric function indicates that the optical transition between O2p states in the highest valence band and Zn 4s states in the lowest conduction band shifts to the low energy range as the Cu concentration increases. Besides, it is shown that the insertion of Cu atom leads to redshift of the optical absorption edge. Meanwhile, the optical constants of pure ZnO and Zn0.75Cu0.250, such as loss function, refractive index and reflectivity, are discussed.

Structures and electrical properties of pure and vacancy-included ZnO NWs of different sizes

The structures and electronic properties of ZnO nanowires（NWs） of different diameters are investigated by employing the first-principles density functional theory. The results indicate that the oxygen vacancy（VO） exerts a more evident influence on the band gap of the ZnO NWs. However, the effect will be weakened with the increase of the diameter. In addition, the energy band shifts downward due to the existence of VOand the offset decreases with the reduction of the VOconcentration. As the concentration of surface Zn atoms decreases, the conduction band shifts downward, while 2p electrons are lost in the oxygen vacancy, resulting in the split of valence band and the formation of an impurity level. Our findings agree well with the previous observations and will be of great importance for theoretical research based on ZnO NWs.

Electronic Structure and Optical Properties of K2Ti6O13 Doped with Transition Metal Fe or Ag

Based on the experimental study of the optical properties of K2Ti6O13 doped with Fe or Ag,their electronic structures and optical properties are studied by the first-principles method based on the density functional theory（DFT）. The calculated optical properties are consistent with the experiment results. K2Ti6O13 doped with substitutional Fe or Ag has isolated impurity bands mainly stemming from the hybridization by the Fe 3d states or Ag 4d states with Ti 3d states and O 2p states and the band gap becomes narrower, the absorption edge of K2Ti6O13 thus has a clear red shift and the absorption of visible light can be realized after doping. For Fe-doped K2Ti6O13, the impurity bands are in the middle of the band gap, suggesting that they can be used as a bridge for valence band electrons transition to the conduction band. For Ag-doped K2Ti6O13,the impurity bands form a shallow acceptor above the valence band and can reduce the recombination rate of photoexcited carriers.The experimental and calculated results are significant for the development of K2Ti6O13materials that have absorption under visible light.

First-principles prediction of the magnetism of 4f rare-earth-metal-doped wurtzite zinc oxide

Electronic structure and magnetic properties of wurtzite ZnO semiconductor doped with rare earth （RE=La, Ce, Pr, Pm, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb） atoms were studied using spin-polarized density functional theory based on the full-potential linear augmented plane wave （FP-LAPW） method as implemented in the Wien2k code. In this approach the generalized gradient approximation （GGA） was used for the exchange-correlation （XC） potential. Our results showed that the substitution of RE ions in ZnO induced spins polarized localized states in the band gap. Moreover, the studied DMSs compounds retained half metallicity at dopant concentration x=0.625%for most of the studied elements, with 100%spin polarization at the Fermi level （EF）. The total magnetic moments of these compounds existed due to RE 4f states present at EF, while small induced magnetic moments existed on other non-magnetic atoms as well. Finally, the energy difference between far and near configurations was investigated. It was found that the room temperature ferromagnetism was possible for RE-doped ZnO at near configuration. Since the RE-RE separation was long enough （far configuration） for magnetic coupling, the system became paramagnetic or antiferromagnetic ground state.

Mg掺杂ZnO电子结构与压电性能的第一性原理研究

采用第一性原理计算方法研究了掺杂不同Mg(r(Mg),摩尔比)的ZnO材料的电子结构与压电性能。研究发现,随着r(Mg)的增加,ZnO晶格常数c与a的比值(c/a)减小,材料禁带宽度增大。当r(Mg)=0.3时,其带隙达到最大值(为1.493 eV)。态密度与差分电荷密度计算结果表明,其带隙增大的原因是导带中Zn-3d态向高能端移动。Mg的引入有助于提升ZnO材料的压电性能,其压电系数从本征的1.30272 C/m^(2)提升至1.35588 C/m^(2),压电系数的提高可能来源于四方因子c/a数值减小引起的结构畸变。

The Influence of Alkaline Earth Elements on Electronic Properties ofα-Si3N4 via DFT Calculation

We used density functional theory(DFT)calculations to study the influence of alkali earth metal element(AE)doping on the crystal structure and electronic band structure ofα-Si3N4.The diversity of atomic radii of alkaline earth metal elements results in structural expansion when they were doped into theα-Si3N4 lattice.Formation energies of the doped structures indicate that dopants prefer to occupy the interstitial site under the nitrogen-deficient environment,while substitute Si under the nitrogen-rich environment,which provides a guide to synthesizingα-Si3N4 with different doping types by controlling nitrogen conditions.For electronic structures,energy levels of the dopants appear in the bottom of the conduction band or the top of the valence band or the forbidden band,which reduces the bandgap ofα-Si3N4.

Cr、Cu掺杂ZnO电子结构和光学性质的理论计算

采用基于密度泛函理论的第一性原理平面波超软赝势方法,对Cr、Cu掺杂ZnO的电子结构和光学性质进行了计算分析。计算结果表明:Cr-Cu共掺杂体系晶胞体积介于二者单掺杂体系之间,形成能最低,体系最稳定。Cr-Cu共掺杂后费米能级进入导带,价带顶下移,带隙较Cr单掺杂时有所降低。共掺杂体系费米能级附近的电子态更加丰富,介电函数虚部强度在低能端方向的峰较Cu单掺杂时有所提高。Cu的引入使共掺杂体系吸收带边相对于Cr单掺杂有一定程度的红移,Cr、Cu的3d电子态的引入使得其在可见光区域及紫外光区域的吸收均有所增强。

钾掺杂对纤锌矿型氧化锌电子结构和光学性质的影响

针对纯纤锌矿型ZnO禁带宽度较高,不能吸收大部分可见光的问题,采用基于密度泛函理论的第一性原理,构建了钾掺杂ZnO的4种超胞模型,并对4种模型进行几何优化,计算了KXZn1-XO的能带结构、态密度和光吸收性能。结果表明:采用广义梯度近似法(GGA)+U方法计算得到纯氧化锌带隙为3.373 eV,与实验值一致;随着钾掺杂量X的增大,ZnO的禁带宽度Eg出现先增大后减小再增加的现象,KXZn1-XO吸收带发生先蓝移后红移的现象。

Y-Cu共掺杂ZnO电子结构与光学性质的第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法研究了本征Zn O、Y和Cu单掺杂Zn O、Y-Cu共掺杂Zn O的电子结构和光学性质.计算结果表明,在本文的掺杂浓度下,Y和Cu单掺杂可以提高Zn O的载流子浓度,从而改善Zn O的导电性,Y-Cu共掺时Zn O半导体进入简并状态,呈现金属性.Y掺杂Zn O可以提高体系在紫外区域的吸收,而Cu掺杂Zn O在可见光和近紫外区域发生吸收增强现象,其中由于Y离子和Cu离子之间的协同效应,Y-Cu共掺杂Zn O时体系对可见光和近紫外区域的光子能量吸收大幅增加,因此Y-Cu共掺杂Zn O可以用于制作光电感应器件.

Ga Al In掺杂ZnO电子结构的第一性原理计算

计算了Ga、Al、In掺杂ZnO体系电子结构,分析了掺杂对ZnO晶体的结构、能带、电子态密度、差分电荷分布的影响。所有计算,都是基于密度泛函理论(DFT)框架下的第一性原理平面波超软赝势方法。计算结果表明:在导带底引入了大量由掺杂原子贡献的导电载流子(Ga:2.57×1021cm–3;Al:2.58×1021cm–3;In:2.53×1021cm–3),明显提高了体系的电导率。同时,光学带隙展宽,且向低能方向漂移,可作为优良的透明导电薄膜材料。

Ga掺杂ZnO电子结构的密度泛函计算

根据密度泛函理论(DFT),采用“总体能量-平面波”超软赝势方法,对不同的Ga掺杂浓度的ZnO晶体几何结构进行了优化,从理论上给出了Ga掺杂ZnO晶体结构参数及性质,为ZnO材料的掺杂改性研究提供了理论依据。计算了Ga掺杂情况下ZnO晶体的总体能量、能带结构、总体态密度、分波态密度。分析了Ga掺杂对ZnO晶体电子结构和光学吸收带边的影响。

Ga掺杂ZnO的电子结构与电性能的研究

采用密度泛函理论广义梯度近似第一性原理计算的方法研究了n型Ga掺杂的纤锌矿结构氧化物ZnO的晶格结构、能带结构和态密度,在此基础上分析了其电性能.计算结果表明,掺杂ZnO氧化物晶格a,b轴增大,c轴略有减小;Ga掺杂ZnO氧化物两能带之间具有0.6eV的直接带隙,需要载流子(电子)跃迁的能隙宽度较未掺杂的ZnO氧化物减小;掺杂体系费米能级附近的态密度大大提高,其能带主要由Gas态、Zns态和Os态电子构成,且他们之间存在着强相互作用,其中Gas态电子对导带贡献最大.电输运性能分析结果表明,Ga掺杂ZnO氧化物导电机构由Znp-Op电子在价带与导带的跃迁转变为Gas-Znd-Os电子在价带与导带的跃迁,这也表明Gas态电子在导电过程中的重要作用;掺杂体系费米能级附近的载流子有效质量较未掺杂体系增大,且价带中的载流子有效质量较大,导带中的载流子有效质量较小.

Ca掺杂ZnO氧化物的电子结构与电性能研究

基于密度泛函理论广义梯度近似第一性原理计算的方法,系统研究了Ca掺杂ZnO氧化物的晶格结构和电子结构,在此基础上分析了其电学性能。结果表明,Ca掺杂ZnO晶胞减小。Ca掺杂氧化物仍为直接带隙半导体材料,带宽达1.5 eV。掺杂体系费米能级附近的能带主要由Cas态、Cap态、Znp态和Op态电子构成,其中p态电子对价带态贡献最大,且Cas态、Znp态和Op态电子之间存在着更强的相互作用。Ca掺杂ZnO氧化物费米能级EF附近载流子浓度增加,运动速度减小,有效质量增加,导电机构为Cas态、Znp态和Op态电子在价带与导带的跃迁,具有更高的电导率,较高的Seebeck系数和综合电性能。

本征缺陷对Ag掺杂ZnO的影响

采用基于密度泛函理论的第一性原理赝势法对Ag掺杂ZnO体系中Ag缺陷和本征缺陷复合体的几何结构、形成能和电子结构进行了比较研究。研究表明,Ag代替Zn位(AgZn)可以在ZnO中形成受主能级。同时,研究发现,Zni-AgZn和Oi-AgZn的形成能较小,存在的可能性较大。其中,Zni-AgZn呈现明显的n型导电特性,而Oi-AgZn具有p型导电的趋势。因此Oi-AgZn有利于p型ZnO的形成。