Electronic properties of graphene nanoribbon doped by boron/nitrogen pair:a first-principles study

By using the first-principles calculations, the electronic properties of graphene nanoribbon （GNR） doped by boron/nitrogen （B/N） bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.

Coherent Spin Transport Through a Six-Coordinate FeN6 Spin-Crossover Complex with Two Di erent Spin Configurations

Due to the magnetic bistability, single-molecule spin-crossover (SCO) complexes have been considered to be the most promising building blocks for molecular spintronic devices. Here, we explore the SCO behavior and coherent spin transport properties of a six-coordinate FeN6 complex with the low-spin (LS) and high-spin (HS) states by performing extensive first-principles calculations combined with non-equilibrium Green’s function technique. Theoretical results show that the LS$HS spin transition via changing the metal-ligand bond lengths can be realized by external stimuli, such as under light radiation in experiments. According to the calculated zero-bias transmission coefficients and density of states as well as the I-V curves under small bias voltages of FeN6 SCO complex with the LS and HS states sandwiched between two Au electrodes, we find that the examined molecular junction can act as a molecular switch, tuning from the OFF (LS) state to the ON (HS) state. Moreover, the spin-down electrons govern the current of the HS molecular junction, and this observed perfect spin-filtering effect is not sensitive to the detailed anchoring structure. These theoretical findings highlight this examined six-coordinate FeN6 SCO complex for potential applications in molecular spintronics.

Passivation of carbon dimer defects in amorphous SiO_2/4H–SiC(0001) interface:A first-principles study

An amorphous SiO2/4 H–Si C（0001） interface model with carbon dimer defects is established based on density functional theory of the first-principle plane wave pseudopotential method.The structures of carbon dimer defects after passivation by H2 and NO molecules are established,and the interface states before and after passivation are calculated by the Heyd–Scuseria–Ernzerhof（HSE06） hybrid functional scheme.Calculation results indicate that H2 can be adsorbed on the O2–C = C–O2 defect and the carbon–carbon double bond is converted into a single bond.However,H2 cannot be adsorbed on the O2–（C = C）′ –O2 defect.The NO molecules can be bonded by N and C atoms to transform the carbon–carbon double bonds,thereby passivating the two defects.This study shows that the mechanism for the passivation of Si O2/4 H–SiC（0001） interface carbon dimer defects is to convert the carbon–carbon double bonds into carbon dimers.Moreover,some intermediate structures that can be introduced into the interface state in the band gap should be avoided.

Chemical vapor deposition synthesis of V-doped MoS_(2)

Van der Waals coupling with different stacking configurations can significantly affect the optical and electronic properties of ultrathin two-dimensional(2D)materials,which is an effective way to tune device performance.Herein,we report a salt-assisted chemical vapor deposition method for the synthesis of bilayer V-doped MoS_(2) with 2H and 3R phases,which are demonstrated by the second harmonic generation and scanning transmission electron microscopy.Notably,the mobility of the 3R phase V-doped MoS_(2) is 6.2%higher than that of the 2H phase.Through first-principles calculations,we further reveal that this particular behavior is attributed to the stronger interlayer coupling of 3R compared to the 2H stacking configuration.This research can be further generalized to other transition metal chalcogenides and will contribute to the development of electronic devices based on 2D materials in the future.

Anisotropic phonon thermal transport in two-dimensional layered materials

Two-dimensional layered materials(2DLMs)have attracted growing attention in optoelectronic devices due to their intriguing anisotropic physical properties.Different members of 2DLMs exhibit unique anisotropic electrical,optical,and thermal properties,fundamentally related to their crystal structure.Among them,directional heat transfer plays a vital role in the thermal management of electronic devices.Here,we use density functional theory calculations to investigate the thermal transport properties of representative layered materials:β-InSe,γ-InSe,MoS2,and h-BN.We found that the lattice thermal conductivities ofβ-InSe,γ-InSe,MoS_(2),and h-BN display diverse anisotropic behaviors with anisotropy ratios of 10.4,9.4,64.9,and 107.7,respectively.The analysis of the phonon modes further indicates that the phonon group velocity is responsible for the anisotropy of thermal transport.Furthermore,the low lattice thermal conductivity of the layered InSe mainly comes from low phonon group velocity and atomic masses.Our findings provide a fundamental physical understanding of the anisotropic thermal transport in layered materials.We hope this study could inspire the advancement of 2DLMs thermal management applications in next-generation integrated electronic and optoelectronic devices.

A novel superhard boron nitride polymorph with monoclinic symmetry

In this work,a new superhard material named Pm BN is proposed.The structural properties,stability,mechanical properties,mechanical anisotropy properties,and electronic properties of Pm BN are studied in this work.Pm BN is dynamically and mechanically stable,the relative enthalpy of Pm BN is greater than that of c-BN,and in this respect,and it is more favorable than that of T-B_(3)N_(3),T-B_(7)N_(7),tP24 BN,Imm2 BN,Ni As BN,and rocksalt BN.The Young's modulus,bulk modulus,and shear modulus of Pm BN are 327 GPa,331 GPa,and 738 GPa,respectively,and according to Chen's model,Pm BN is a novel superhard material.Compared with its original structure,the mechanical anisotropy of Young's modulus of Pm BN is larger than that of C14 carbon.Finally,the calculations of the electronic energy band structure show that Pm BN is a semiconductor material with not only a wide band gap but also an indirect band gap.

Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN

Two-dimensional(2D)semiconductors exhibit great potential to minimize the size and drastically reduce the energy consumption of optoelectronic devices due to promising features induced by quantum confinement.It has achieved many successes in infra-red and visible light optoelectronic devices.The study on ultra-wide band gap 2D semiconductors except h-BN are still limited,however,the requirement is more and more urgent.Inspired by the progresses of III-nitride semiconductors in recent several decades,2D AlN is highly expected to be a new member of ultra-wide band gap 2D semiconductors.In this work,we employed the first-principles calculations to investigate the structural and electronic properties of 2D AlN.We revealed that few-layer AlN acquires a square-octagon(so-AlN)configuration in the vertical direction when the number of atomic layers n is smaller than 16.With increasing the thickness from 2 ML to 8 ML,the band gap decreased due to the weakening of quantum confinement effect.We demonstrated the intrinsic indirect band gap can be tuned to be direct by applying different direction strains for so-AlN.Our results open new avenues for their application in nano-optoelectronics.