Lazy loading algorithm for traffic assignment of road networks under fixed charge condition

The measures of path charge are important considerations in traffic assignment of road networks. Factors, such as travel time, fixed charge and traffic congestion which affect road users＇ choices of trip paths, are analyzed. Travelers usually decide their trip paths based on their personal habits, preferences and the information at hand. By considering both deterministic and stochastic factors which affect the value of time （VOT） during the process of path choosing, a variational inequality model is proposed to describe the problem of traffic assignment. A lazy loading algorithm for traffic assignment is designed to solve the proposed model, and the calculation steps are given. Numerical experiment results show that compared with the all-or-nothing assignment, the proposed model and the algorithm can provide more optimal traffic assignments for road networks. The results of this study can be used to optimize traffic planning and management.

Thin silicon layer SOI power device with linearly-distance fixed charge islands

A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed （LFI LDMOS）. A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide layer and dynamic holes are attracted and accumulated, which is crucial to enhance the electric field of the buried oxide and the vertical breakdown voltage. The surface electric field is improved by increasing the distance between two adjacent fixed charge islands from source to drain, which lead to the higher concentration of the drift region and a lower on-resistance. The numerical results indicate that the breakdown voltage of 500 V with Ld = 45μm is obtained in the proposed device in comparison to 209 V of conventional LDMOS, while maintaining low on- resistance.

Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge

A model based on analysis of the self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor （MOS） structure. In this model, the influences of interface trap charge （ITC） at the Si-SiO2 interface and fixed oxide charge （FOC） in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than l012 cm 2, which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for the tunneling current in the inversion layer.

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.

Membrane Potentials Across Hybrid Charged Mosaic Membrane in Organic Solutions

Membrane potentials across hybrid charged mosaic membrane in organic solutions were measured. Equilibrium swelling degree （SD） and fixed charge density in both organic solutions and water were also determined. Ethylene glycol, ethanol, n-propanol and glycerol were used as organic solutes; meanwhile 0.001mol-dm^-3 aqueous KCl solution was utilized as a strong electrolyte to measure the electrical difference. Equilibrium swelling degree indicated that it could be affected by the density of organic solutes; while it enhanced with the increasing density of these solutes. The measurement of fixed charge density showed that the membrane had the maximal absolute value in water among these solvents whether for cationic or anionic groups; the difference of dielectric constant between the water and the organic solutes might be responsible for these change trends. It was confirmed that membrane potentials increased with both the increasing concentration of the organic solutions and the elevated pH values. These results demonstrated that the characteristics of the hybrid charged mosaic membrane could be highly impacted by the properties of the organic solutes. A theoretical modal for charged membranes in ternary ion systems of weak electrolyte can be used to explain the above-mentioned phenomena.

A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER

A new SOI （Silicon On Insulator） high voltage device with Step Unmovable Surface Charges （SUSC） of buried oxide layer and its analytical breakdown model are proposed in the paper. The unmovable charges are implemented into the upper surface of buried oxide layer to increase the vertical electric field and uniform the lateral one. The 2-D Poisson＇s equation is solved to demonstrate the modulation effect of the immobile interface charges and analyze the electric field and breakdown voltage with the various geometric parameters and step numbers. A new RESURF （REduce SURface Field） condition of the SOl device considering the interface charges and buried oxide is derived to maximize breakdown voltage. The analytical results are in good agreement with the numerical analysis obtained by the 2-D semiconductor devices simulator MEDICI. As a result, an 1200V breakdown voltage is firstly obtained in 3pro-thick top Si layer, 2pro-thick buried oxide layer and 70pro-length drift region using a linear doping profile of unmovable buried oxide charges.

Actions of negative bias temperature instability （NBTI） and hot carriers in ultra-deep submicron p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）

Hot carrier injection （HCI） at high temperatures and different values of gate bias Vg has been performed in order to study the actions of negative bias temperature instability （NBTI） and hot carriers. Hot-carrier-stress-induced damage at Vg = Vd, where Vd is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different： the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.