Effect of different bending shapes on thermal properties of flexible light-emitting diode filament

Heat dissipation is an important part of light-emitting diode(LED)filament research and has aroused constant concern.In this paper,we studied the thermal performance of flexible LED filament by numerical simulation and through experiment.The heat dissipation characteristics of spring-like structure flexible LED filament were computed by finite volume method,and it was found that the chip junction temperature was closely related to the pitch and the bending radius.The effect of inclination angle of lighting LED filament was discussed because it is relevant to the spring-like structure flexible LED filament in geometry.The results demonstrated that the temperature of the filament increases as the inclination angle improves.

Flexible perovskite light-emitting diodes for display applications and beyond

The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.

Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes

Ag-In-Ga-S(AIGS)quantum dots(QDs)have recently attracted great interests due to the outstanding optical properties and eco-friendly components,which are considered as an alternative replacement for toxic Pb-and Cd-based QDs.However,enormous attention has been paid to how to narrow their broadband spectra,ignoring the application advantages of the broadband emission.In this work,the AIGS QDs with controllable broad green-red dual-emission are first reported,which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals.Resultantly,the AIGS QDs exhibit broad dual-emission at green-and red-band evidenced by photoluminescence(PL)spectra,and the PL relative intensity and peak position can be finely adjusted.Furthermore,the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra.Accordingly,the AIGS QDs(the size consists of 17 nm and 3.7 nm)with 530 nm and 630 nm emission could successfully be synthesized at 220°C.By combining the blue light-emitting diode(LED)chips and dual-emission AIGS QDs,the constructed white light-emitting devices(WLEDs)exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage(CIE)chromaticity coordinates of(0.33,0.31),a correlated color temperature(CCT)of 5425 K,color rendering index(CRI)of 90,and luminous efficacy of radiation(LER)of 129 lm/W,which indicates that the AIGS QDs have huge potential for lighting applications.

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening

Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices.In this study,we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide.The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and,on the other hand,can screen the charged defects at the grain boundaries with potassium cations.This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films,leading to a significant enhancement of photoluminescence quantum yield to near-unity values(95%).Meanwhile,the potassium bromide treatment promoted the growth of homogeneous and smooth film,facilitating the charge carrier injection in the devices.Consequently,the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of~21%and maximum luminance of~60,000 cd m^(-2).This work provides a deeper insight into the passivation mechanism of ionic compound additives in perovskite with the solution method.

Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes

A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.

Ultra‑Transparent and Multifunctional IZVO Mesh Electrodes for Next‑Generation Flexible Optoelectronics

Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices.Furthermore,they are crucial for applications in the fields of energy,display,healthcare,and soft robotics.Conducting meshes represent a promising alternative to traditional,brittle,metal oxide conductors due to their high electrical conductivity,optical transparency,and enhanced mechanical flexibility.In this paper,we present a simple method for fabricating an ultra-transparent conducting metal oxide mesh electrode using selfcracking-assisted templates.Using this method,we produced an electrode with ultra-transparency(97.39%),high conductance(Rs=21.24Ωsq^(−1)),elevated work function(5.16 eV),and good mechanical stability.We also evaluated the effectiveness of the fabricated electrodes by integrating them into organic photovoltaics,organic light-emitting diodes,and flexible transparent memristor devices for neuromorphic computing,resulting in exceptional device performance.In addition,the unique porous structure of the vanadium-doped indium zinc oxide mesh electrodes provided excellent flexibility,rendering them a promising option for application in flexible optoelectronics.

A green-yellow emitting β-Sr_2SiO_4:Eu^(2+) phosphor for near ultraviolet chip white-light-emitting diode

Sr2SiO4：xEu^2＋ phosphors were synthesized through the solid-state reaction technique. The crystal phase of Sr2SiO4：xEu^2＋ phosphor manipulated by Eu^2＋ concentration was studied. The phase transited from β to α＇ in Sr2SiO4：xEu^2＋ phosphor with increasing europium concentration. The single β phase was formed as x≤005 and changed α＇ phase when x〉0.01. The emission spectrum of the β-Sr2SiO4：Eu^2＋ phosphor consisted of a green-yellow broadband peaking at around 540 nm and a blue band at 470 nm under near ultraviolet excitation. The white LEDs by combining near ultraviolet chips with β-Sr2SiO4：Eu^2＋ phosphors were fabricated. The luminous efficiency （15.7lm/W） was higher than α＇-Sr2SiO4：Eu^2＋ phosphor white LED.

Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode

We report the fabrication and characterization of light-emitting diodes based on n-ZnO/p-GaN heterojunctions. The n-type ZnO epilayer is deposited by metalorganic chemical vapor deposition （MOCVD） on a MOCVD grown Mg-doped p-GaN layer to form a p-n heterojunction. During the etching process, the relation between the etching depth and the etching time is linear in a HF and NH4 CI solution of a certain ratio. The etching rates of the SiO2 and ZnO are well controlled,which are essential for device fabrication. The current-voltage relationship of this heterojunction shows a diode-like rectifying behavior. In contrast to previous reports,electroluminescence （EL） emissions are observed by the naked eye at room temperature from the n-ZnO/p-GaN heterojunction under forward-and reverse-bias. The origins of these EL emissions are discussed in comparison with the pho- toluminescence spectra.

Temperature effects on photoluminescence of YAG:Ce^(3+) phosphor and performance in white light-emitting diodes

The well crystalline YAG：Ce^3＋ phosphor was synthesized by sold-state method, and the temperature dependence of excitation and emission spectra of YAG：Ce^3＋ phosphor were investigated in the temperature range from room temperature to 573 K. With temperature increasing, it was noted that the emission intensity of as-repared phosphors decreased considerably more rapidly when pumped by 460 nm than by 340 nm. The temperature-intensity curves under different excitation wavelengths were obtained using an Arrhenius function, and the corresponding activation energies were also obtained respectively. Thus, the experimental phenomenon was discussed in terms of nonradiative decay rate. The effects of as-prepared phosphors on the performance of the white LED with changing temperature were also studied.

Light-emitting diodes based on all-inorganic copper halide perovskite with self-trapped excitons

Light-emitting diodes based on lead halide perovskite have attracted great attention due to their outstanding performance.However,their application is plagued by the toxicity of Pb and the poor stability.Herein novel copper-based all inorganic perovskite CsCu2I3 with much enhanced stability has been reported with a potential photoluminescence quantum yield(PLQY)over 20%and self-trapped excitons(STE).By taking advantage of its extraordinary thermal stability,we successfully fabricate high-quality CsCu2I3 film through direct vacuum-based deposition(VBD)of CsCu2I3 powder.The resulting film shows almost the same PLQY with the synthesized powder,as well as excellent uniformity and stability.The perovskite light-emitting diodes(Pe-LED)based on the evaporated CsCu2I3 emitting layer achieve a luminescence of 10 cd/m2 and an external quantum efficiency(EQE)of 0.02%.To the best of our knowledge,this is the first CsCu2I3 Pe-LED fabricated by VBD with STE property,which offers a new avenue for lead-free Pe-LED.

The strategies for preparing blue perovskite light-emitting diodes

Metal halide perovskites have attracted tremendous interest due to their excellent optical and electrical properties,and they find many promising applications in the optoelectronic fields of solar cells,light-emitting diodes,and photodetectors.Thanks to the contributions of international researchers,significant progress has been made for perovskite light-emitting diodes(Pero-LEDs).The external quantum efficiencies(EQEs)of Pero-LEDs with emission of green,red,and near-infrared have all exceeded 20%.However,the blue Pero-LEDs still lag due to the poor film quality and deficient device structure.Herein,we summarize the strategies for preparing blue-emitting perovskites and categorize them into two:compositional engineering and size controlling of the emitting units.The advantages and disadvantages of both strategies are discussed,and a perspective of preparing high-performance blue-emitting perovskite is proposed.The challenges and future directions of blue PeroLEDs fabrication are also discussed.

Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr_(3) quantum dots

All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have received great attention in white light emission because of their outstanding properties.However,their practical application is hindered by poor stability.Herein,we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr_(3) QDs by using 2-hexyldecanoic acid(DA)as a ligand to replace the regular oleic acid(OA)ligand.Thanks to the strong binding energy between DA ligand and QDs,the modified QDs not only show a high photoluminescence quantum yield(PLQY)of 96%but also exhibit high stability against ethanol and water.Thereby warm white light-emitting diodes(WLEDs)are constructed by combining lig-and modified CsPbBr_(3) QDs with red AgInZnS QDs on blue emitting InGaN chips,exhibiting a color rendering index of 93,a power efficiency of 64.8 lm/W,a CIE coordinate of(0.44,0.42)and correlated color temperature value of 3018 K.In ad-dition,WLEDs based on ligand modified CsPbBr_(3) QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr_(3) QDs.The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr_(3) QDs are ideal for WLEDs application.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etching technology using a monolayer of nickel （Ni） nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

InGaN based light-emitting diodes （LEDs） with different electron blocking layers have been numerically investi- gated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells （MQWs）.

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined, The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Ω, while that of the normal cell is 21.3 Ω. The scanning electron microscope （SEM） image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.