Texture and Se vacancy optimization induces high thermoelectric performance in Bi_(2)Se_(3) flexible thin films

Bi_(2)Se_(3)-based flexible thin film with high thermoelectric performance is promising for the waste heat recovery technology.In this work,a novel post-selenization method is employed to prepare n-type Bi_(2)Se_(3)flexible thin films with highly textured structure.The strengthened texture and Se vacancy optimization can be simultaneously achieved by optimizing the selenization temperature.The highly oriented texture leads to the increased carrier mobility and results in a high electric conductivity of~290.47 S·cm^(-1)at 623 K.Correspondingly,a high Seebeck coefficient(>110μW·K-1)is obtained due to the reduced carrier concentration,induced by optimizing vacancy engineering.Consequently,a high power factor of 3.49μW·cm^(-1)·K^(-2)at 623 K has been achieved in asprepared highly-bendable Bi_(2)Se_(3)flexible thin films selenized at 783 K.This study introduces an effective post-selenization method to tune the texture structure and vacancies of Bi_(2)Se_(3)flexible thin films,and correspondingly achieves high thermoelectric performance.

Recent advances of flexible perovskite solar cells

In few years only, the efficiency record of perovskite solar cells（PSCs） has raised quickly from 3.8% to over 22%. This emerging photovoltaic technology has primarily shown its great potential of industrialization. Flexible PSCs are thought to be one of the most priority options for mass production, related to the intrinsic advantage of perovskite thin films which could be deposited by facile solution processes at low temperature. Flexible PSCs have at least four advantages in comparison to the rigid counterpart：（1） it can generate higher power output at lighter weight,（2） it is easily portable,（3） it can be easily attached to architectures or textiles with diverse shapes, and（4） it is compatible with roll-to-roll fabrication in a large scale. In this review, we have summarized recent development of the key materials and technologies applied in flexible PSCs. The key materials including flexible substrates, transparent and conductive electrodes, and interfacial materials; some key technologies about roll-to-roll manufacture, encapsulation technology have been overviewed. Finally, a prospect on possible application directions of flexible PSCs has been discussed.

Oxide-based thin film transistors for flexible electronics

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors（TFTs） are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends.

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors（TFTs）, fabricating with atomic layer deposition（ALD） processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types（directions）. The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields.