Flip chip bonding has become a primary technology that has found application in the chip interconnection process in the electronic manufacturing industry in recent years. The solder joints of the flip chip bonding are...Flip chip bonding has become a primary technology that has found application in the chip interconnection process in the electronic manufacturing industry in recent years. The solder joints of the flip chip bonding are small and consist of complicated microstructures such as Sn solution, eutectic mixture, and intermetallic compounds （IMCs）, whose mechanical performance is quite different from the original solder bulk. The evolution of microstructure of the flip chip solder joints under thermal aging was analyzed. The results show that with an increase in aging time, coarsening of solder bulk matrix and AuSn4 IMCs occurred within the solder. The IMCs that are formed at the bottom side of the flip chip bond were different from those on the top side during the aging process. （Cu, Ni, Au）0Sn5 were formed at the interfaces of both sides, and large complicated （Au,Ni, Cu）Sn4 IMCs appeared for some time near the bottom interface after aging, but they disappeared again and thus （Cu,Ni, Au ）0Sn5 IMC thickness increased considerably. The influence of reflow times during the flip chip bonding （as-bonded condition） on the characteristics of interfacial IMCs was weakened when subjected to the aging process.展开更多
This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based...This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.展开更多
Based on flip-chip packaging,a novel approach towards integrated magnetic bio-separator was designed.The magnetic field and the force on the bead were simulated and analyzed,leading to the optimization of the fabricat...Based on flip-chip packaging,a novel approach towards integrated magnetic bio-separator was designed.The magnetic field and the force on the bead were simulated and analyzed,leading to the optimization of the fabrication parameters of the micro-magnetic unit.The planar coil as an electromagnet was fabricated through electroplating on a single seed layer. The PDMS microfluidic channel was bonded on the inverse side after Si etching.The results presented in this paper provide a novel design and fabrication to approach a microfluidic bio-separation system with magnetic beads.展开更多
High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and...High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.展开更多
文摘Flip chip bonding has become a primary technology that has found application in the chip interconnection process in the electronic manufacturing industry in recent years. The solder joints of the flip chip bonding are small and consist of complicated microstructures such as Sn solution, eutectic mixture, and intermetallic compounds （IMCs）, whose mechanical performance is quite different from the original solder bulk. The evolution of microstructure of the flip chip solder joints under thermal aging was analyzed. The results show that with an increase in aging time, coarsening of solder bulk matrix and AuSn4 IMCs occurred within the solder. The IMCs that are formed at the bottom side of the flip chip bond were different from those on the top side during the aging process. （Cu, Ni, Au）0Sn5 were formed at the interfaces of both sides, and large complicated （Au,Ni, Cu）Sn4 IMCs appeared for some time near the bottom interface after aging, but they disappeared again and thus （Cu,Ni, Au ）0Sn5 IMC thickness increased considerably. The influence of reflow times during the flip chip bonding （as-bonded condition） on the characteristics of interfacial IMCs was weakened when subjected to the aging process.
基金supported by the National Natural Science Foundation of China(Grant No.50675130)the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAE01B14)the Program for the New Century Excellent Talents in University(Grant No.NCET-07-0535)
文摘This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes （flip chip LEDs） on Si substrates. The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found that the electroluminescence （EL） intensity variation had a large correlation to the ultrasonic power, and then to the bonding temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface, The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.
文摘Based on flip-chip packaging,a novel approach towards integrated magnetic bio-separator was designed.The magnetic field and the force on the bead were simulated and analyzed,leading to the optimization of the fabrication parameters of the micro-magnetic unit.The planar coil as an electromagnet was fabricated through electroplating on a single seed layer. The PDMS microfluidic channel was bonded on the inverse side after Si etching.The results presented in this paper provide a novel design and fabrication to approach a microfluidic bio-separation system with magnetic beads.
文摘High-power and high-reliability GaN/InGaN flip-chip light-emitting diodes （FCLEDs） have been demonstrated by employing a flip-chip design, and its fabrication process is developed. FCLED is composed of a LED die and a submount which is integrated with circuits to protect the LED from electrostatic discharge （ESD） damage. The LED die is flip-chip soldered to the submount, and light is extracted through the transparent sapphire substrate instead of an absorbing Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial designs. The optical and electrical characteristics of the FCLED are presented. According to ESD IEC61000-4-2 standard （human body model）, the FCLEDs tolerated at least 10 kV ESD shock have ten times more capacity than conventional GaN/InGaN LEDs. It is shown that the light output from the FCLEDs at forward current 350mA with a forward voltage of 3.3 V is 144.68 mW, and 236.59 mW at 1.0A of forward current. With employing an optimized contact scheme the FCLEDs can easily operate up to 1.0A without significant power degradation or failure. The li.fe test of FCLEDs is performed at forward current of 200 mA at room temperature. The degradation of the light output power is no more than 9% after 1010.75 h of life test, indicating the excellent reliability. FCLEDs can be used in practice where high power and high reliability are necessary, and allow designs with a reduced number of LEDs.
