To achieve high parallel computation of discrete wavelet transform （DWT） in JPEG2000, a high-throughput two-dimensional （2D） 9/7 DWT very large scale integration （VLSI） design is proposed, in which the row proce...To achieve high parallel computation of discrete wavelet transform （DWT） in JPEG2000, a high-throughput two-dimensional （2D） 9/7 DWT very large scale integration （VLSI） design is proposed, in which the row processor is based on flipping structure. Due to the difference of the input data flow, the column processor is obtained by adding the input selector and data buffer to the row processor. Normalization steps in row and column DWT are combined to reduce the number of multipliers, and the rationality is verified. By rearranging the output of four-line row DWT with a multiplexer （MUX）, the amount of data processed by each column processor becomes half, and the four-input/four- output architecture is implemented. For an image with the size of N x N, the computing time of one-level 2D 9/7 DWT is 0.25N2 ＋ 1.5N clock cycles. The critical path delay is one multiplier delay, and only 5N internal memory is required. The results of post-route simulation on FPGA show that clock frequency reaches 136 MHz, and the throughput is 544 Msample/s, which satisfies the requirements of high-speed applications.展开更多
A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, G...A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted（TM） and flip chip（FC） configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.展开更多
基金The National Science and Technology M ajor Project of the M inistry of Science and Technology of China(No.2014ZX03003007-009)
文摘To achieve high parallel computation of discrete wavelet transform （DWT） in JPEG2000, a high-throughput two-dimensional （2D） 9/7 DWT very large scale integration （VLSI） design is proposed, in which the row processor is based on flipping structure. Due to the difference of the input data flow, the column processor is obtained by adding the input selector and data buffer to the row processor. Normalization steps in row and column DWT are combined to reduce the number of multipliers, and the rationality is verified. By rearranging the output of four-line row DWT with a multiplexer （MUX）, the amount of data processed by each column processor becomes half, and the four-input/four- output architecture is implemented. For an image with the size of N x N, the computing time of one-level 2D 9/7 DWT is 0.25N2 ＋ 1.5N clock cycles. The critical path delay is one multiplier delay, and only 5N internal memory is required. The results of post-route simulation on FPGA show that clock frequency reaches 136 MHz, and the throughput is 544 Msample/s, which satisfies the requirements of high-speed applications.
文摘A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted（TM） and flip chip（FC） configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.
