For large diarneter silicon single crystal, the solid-liquid growth interface is necessary to be a coneaveshape with a certain radius range. If the change of the radius of growth interface is not in this limited range...For large diarneter silicon single crystal, the solid-liquid growth interface is necessary to be a coneaveshape with a certain radius range. If the change of the radius of growth interface is not in this limited range,the growth of DF (dislocation free) sinsle crystal is very difficult. The growth of FZ-Si single crystal was stud-ied. It is found that the growth speed ( 2. 5～2. 7 mm/min) as well as the rotation speed (3. 5 r/min) for theΦ100 mm crystal can be smaller . comparing with the Φ76. 2 mm crystal with the same coil. In order to satisfythe demand of large diameter crystal . the size of coil should be large enough, and the shape should satisfy theneed of the growth interface of crystal. With the increasing of diameter , the heating power , the anode voltageand the strength of electric field within the coil should be increased, and Ar pressure in surrounding circum-stance should also be higher , from 1. 96 × 1 0￣4 Pa to 4. 90 × 10￣4 Pa.According to the above growth factors, three rods of Φ100 mm FZ-Si single crystal were grown success-fully , the weights are 8～10 kg. When the diameter of crystal cone is increased to a limited size, “remeltingarca” will occur in the surface of the crystal , which cause a failure of growing DF crystal , this reason may bethat the recrystalliztion direction has been chansed , as it does.展开更多
文摘For large diarneter silicon single crystal, the solid-liquid growth interface is necessary to be a coneaveshape with a certain radius range. If the change of the radius of growth interface is not in this limited range,the growth of DF (dislocation free) sinsle crystal is very difficult. The growth of FZ-Si single crystal was stud-ied. It is found that the growth speed ( 2. 5～2. 7 mm/min) as well as the rotation speed (3. 5 r/min) for theΦ100 mm crystal can be smaller . comparing with the Φ76. 2 mm crystal with the same coil. In order to satisfythe demand of large diameter crystal . the size of coil should be large enough, and the shape should satisfy theneed of the growth interface of crystal. With the increasing of diameter , the heating power , the anode voltageand the strength of electric field within the coil should be increased, and Ar pressure in surrounding circum-stance should also be higher , from 1. 96 × 1 0￣4 Pa to 4. 90 × 10￣4 Pa.According to the above growth factors, three rods of Φ100 mm FZ-Si single crystal were grown success-fully , the weights are 8～10 kg. When the diameter of crystal cone is increased to a limited size, “remeltingarca” will occur in the surface of the crystal , which cause a failure of growing DF crystal , this reason may bethat the recrystalliztion direction has been chansed , as it does.
