This paper gives a numerical study on the flow and temperature fields in an induced plasma reactor, which worked in 0.5 ATM with air as a working gas. We employed a two-dimensional mode of an inductively coupled plas...This paper gives a numerical study on the flow and temperature fields in an induced plasma reactor, which worked in 0.5 ATM with air as a working gas. We employed a two-dimensional mode of an inductively coupled plasma to calculate the temperature and flow field of the reactor as well as the generator. The algorithm is based on the solutions of the two-dimensional continuity, momentum, and energy equations in term of vorticity, stream function and enthalpy. An upwind finite-difference scheme was adopted to solve those equations with appropriate boundary conditions. The computed results show that there is a flat region with little parameter change in the reactor, that the diameter of the region is not much larger than that of the generator and that a deep change of parameter exists in the outer side of the region.展开更多
Metal organic chenlical vapor deposition （AIOCVD） growth systems arc one of the. main types of equipment used for growing single crystal materials, such as GaN. To obtain fihn epitaxial materials with uniform perfor...Metal organic chenlical vapor deposition （AIOCVD） growth systems arc one of the. main types of equipment used for growing single crystal materials, such as GaN. To obtain fihn epitaxial materials with uniform performanee, the flow field and ternperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to stud,v the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding~ significance for the growth of GaN fihn materials.展开更多
文摘This paper gives a numerical study on the flow and temperature fields in an induced plasma reactor, which worked in 0.5 ATM with air as a working gas. We employed a two-dimensional mode of an inductively coupled plasma to calculate the temperature and flow field of the reactor as well as the generator. The algorithm is based on the solutions of the two-dimensional continuity, momentum, and energy equations in term of vorticity, stream function and enthalpy. An upwind finite-difference scheme was adopted to solve those equations with appropriate boundary conditions. The computed results show that there is a flat region with little parameter change in the reactor, that the diameter of the region is not much larger than that of the generator and that a deep change of parameter exists in the outer side of the region.
基金Supported by the National Key R&D Program of China under Grant No 2016YFB0400104
文摘Metal organic chenlical vapor deposition （AIOCVD） growth systems arc one of the. main types of equipment used for growing single crystal materials, such as GaN. To obtain fihn epitaxial materials with uniform performanee, the flow field and ternperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to stud,v the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding~ significance for the growth of GaN fihn materials.
