The spontaneous activity of the blood oxygen level-dependent(BOLD)signal has been demonstrated as a promising way for understanding how the brain intrinsically organized.However,most of these studies focused solely on...The spontaneous activity of the blood oxygen level-dependent(BOLD)signal has been demonstrated as a promising way for understanding how the brain intrinsically organized.However,most of these studies focused solely on the spontaneous activity in gray matter(GM)and not on white matter(WM).This is展开更多
Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequ...Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.展开更多
基金supported by the National Natural Science Foundation of China (81401400 to G.J.J.,81471653 to W.L.,31571149,91432301 and 91232717 to K.W.)the Doctoral Foundation of Anhui Medical University (XJ201532 to G.J.J.)+3 种基金Youth Top-notch Talent Support Program of Anhui Medical University (to G.J.J.)the China Postdoctoral Science Foundation (2013M532229 to W.L.)National Basic Research Program of China (2015CB856405,2012CB720704,and 2011CB707805 to K.W.)Anhui Collaborative Innovation Center of Neuropsychiatric Disorder and Mental Health
文摘The spontaneous activity of the blood oxygen level-dependent(BOLD)signal has been demonstrated as a promising way for understanding how the brain intrinsically organized.However,most of these studies focused solely on the spontaneous activity in gray matter(GM)and not on white matter(WM).This is
基金supported by the National Natural Science Foundation of China(Nos.61574048,61204112)the Guangdong Natural Science Foundation(No.2014A030313656)
文摘Low-frequency noise behavior in the MOSFETs processed in 65 run technology is investigated in this paper.Low-frequency noise for NMOS transistors agrees with McWhorter＇s theory（carrier number fluctuation）,low-frequency noise in the sub-threshold regime agrees with McWhorter＇s theory for PMOS transistors while it agree with Hooge＇s theory（carrier mobility fluctuation） in the channel strong inversion regime.According to carrier number fluctuation model,the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94×10^（17） and 3.56×10^（18） cm^（-3）/eV respectively.According to carrier mobility fluctuation model,the extracted average Hooge＇s parameters are 2.42×10^（-5） and 4×10^（-4）.By consideration of BSIM compact model,it is shown that two noise parameters（NOIA and NOIB） can model the intrinsic channel noise.The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94×10^（17） cm^（-3）/eV and 9.31×10^（-4） V^（-1）.But for NMOS,NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage.The extracted NOIA and NOIB for NMOS are equal to 3.56×10^（18） cm^（-3）/eV and 1.53×10^（-2） V^（-1）.Good agreement between simulation and experimental results is achieved.
