Preparation,Characterization and Electronic Properties of Fluorine-doped Tin Oxide Films

Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.

A Study on Optical Emission of CF_4+CH_4 Plasma and Deposition Mechanisms of a-C : F, H Films

Fluorinated amorphous carbon (a-C : F,H) films were deposited by inductively coupled plasma using CH4 and CF4 gases. Actinometrical optical emission spectroscopy (AOES) was used to determine the relative concentrations of various radicals, CF, CF2 CH, C2, H and F, in the plasma as a function of gas flow ratio R, R= [CH4]/([CH4]+[CF4]). The structural evolution of the films were characterized by Fourier transform infrared transmission (FTIR) spectroscopy. The relationship between the film deposition and the precursor radicals in the plasma was discussed. It was shown that CH radical, as well as CF, CF2, C2 radicals are of the precursors, contributing to a-C : F, H film growth.

Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma

a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films (a-C:F) were prepared at different temperatures using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF3 and C2H2 as source gases. Films were annealed at 500℃ in vacuum ambience in order to investigate the relationship of their thermal stability, optical and electrical properties with deposition temperature. Results indicate that the films deposited at high temperature have a less CFX bonding and a more cross-linking structure thus a better thermal stability. They also have a lower bandgap, higher dielectric constant and higher leakage current.

Relationship Between Thermal Stability and Optical Bandgap of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films were deposited using microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CF4 and C8H6 as source gas and were annealed in nitrogen ambience for the investigating of their thermal stability .The relative concentration of C=C bond and optical bandgap were obtained by Fourier Transform Infrared (FTIR) spectroscopy and Ultraviolet-Visible (UV-VIS ) spectrum, respectively. It has been demonstrated that there is a close relationship between relative concentration of C=C bond and optical bandgap, and the films deposited at a higher microwave power have a lower optical bandgap and a better thermal stability.