A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss an...A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm （from 1137.3 nm to 1182.8 nm） under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.展开更多
A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity le...A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest -3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation.展开更多
Effect of high level of spontaneous and carrier noise on mode-locked hybrid soliton pulse source and relative intensity noise is described. Transform limited pulses are not generated over a wide frequency range becaus...Effect of high level of spontaneous and carrier noise on mode-locked hybrid soliton pulse source and relative intensity noise is described. Transform limited pulses are not generated over a wide frequency range because of these noises.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61274072)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm （from 1137.3 nm to 1182.8 nm） under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274072,60976057,and 60876086)
文摘A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest -3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation.
文摘Effect of high level of spontaneous and carrier noise on mode-locked hybrid soliton pulse source and relative intensity noise is described. Transform limited pulses are not generated over a wide frequency range because of these noises.
基金The National Natural Science Foundation of China(No.61361011)Guangxi Natural Science Foundation(No.2015GXNSFBA139257)Guangxi Normal University Doctor Scientific Research Foundation,Guangxi Normal University Key Program(No.2015ZD03)
