Advanced Power Module Packaging and Integration Structures for High Frequency Power Conversion：From Silicon to GaN

The emerging of commercial high-voltage gallium nitride(GaN) power devices provides extraordinary switching performance over silicone devices, which enables high-voltage power conversion switching at megahertz range.Such outstanding features also pose strong challenges for device packaging design since the package parasitics can significantly influence the device switching characteristics, and thus can shadow the advantages brought by GaN devices. Designers have been dealing with these challenges brought by high du/dt and high-frequency switching operation even since the silicon(Si) era when fast switching Si MOSFET is first developed and came up with lots of inspiring advanced power module packaging structures to mitigate the problems.This paper presents a review of advanced power module packaging and integration structures that are suitable for high frequency power conversion.The review covers the heritage from the high frequency Si MOSFET packaging to the state-of-the-art for GaN devices.

Kilowatt-class high-energy frequency conversion to 95 J at 10 Hz at 515 nm

We report on frequency doubling of high-energy,high repetition rate ns pulses from a cryogenically gas cooled multi-slab ytterbium-doped yttrium aluminum garnet laser system,Bivoj/DiPOLE,using a type-I phase matched lithium triborate crystal.We achieved conversion to 515 nm with energy of 95 J at repetition rate of 10 Hz and conversion efficiency of 79%.High conversion efficiency was achieved due to successful depolarization compensation of the fundamental input beam.

Suppressing the preferential σ-polarization oscillation in a high power Nd:YVO_4 laser with wedge laser crystal

We observe the phenomenon of priority oscillation of the unexpected a-polarization in high-power Nd：YVO4 ring laser. The severe thermal lens of the a-polarized lasing, compared with the n-polarized lasing, is the only reason for the phenomenon. By designing a wedge Nd：YVO4 crystal as the gain medium, the unexpected a-polarization is completely suppressed in the entire range of pump powers, and the polarization stability of the expected zc-polarized output is enhanced. With the output power increasing from threshold to the maximum power, no a-polarization lasing is observed. As a result, 25.3 W of stable single-frequency laser output at 532 nm is experimentally demonstrated.

Effect of Hot Carrier on Amplitude Modulation and Demodulation of Gaussian High Power Helicon Wave in Homogeneous Longitudinally Magnetized Strain Dependent Dielectric Material

In the present communication, the hydrodynamic model is used to investigate the amplitude modulation as well as demodulation of an electromagnetic wave of high power helicon pump wave into another helicon wave in strain dependent dielectric material incorporating carrier heating (CH) effects. The consideration of CH in modulation and demodulation is prime importance for the adding of new dimension in analysis of amplification of acoustic helicon wave. By using the dispersion relation, threshold pump electric filed and growth rate of unstable mode from the modulation and demodulation of the high power helicon wave well above from the threshold value will be discussed in the present analysis. The numerical analysis is applied to a strain dependent dielectric material, BaTiO3 at room temperature and irradiated with high power helicon wave of frequency 1.78 × 1014 Hz. This material is very sensitive to the pump intensities, therefore during studies, Gaussian shape of the helicon pump wave is considered during the propagation in stain dependent dielectric material and opto-acoustic wave in the form of Gaussian profile (ω0,κ0) is induced longitudinally along the crystallographic plane of BaTiO3. Its variation is caused by the available magnetic field (ωc), interaction length (z) and pulsed duration of interaction (τ). From the analysis of numerical results, the incorporation of CH effect can effectively modify the magnitude of modulation or demodulation of the amplitude of high power helicon laser wave through diffusion process. Not only the amplitude modulation and demodulation of the wave, the diffusion of the CH effectively modifies the growth rate of unstable mode of frequency in BaTiO3. The propagation of the threshold electric field shows the sinusoidal or complete Gaussian profile, whereas this profile is found to be completely lost in growth of unstable mode. It has also been seen that the growth rate is observed to be of the order of 108 - 1010 s-1 but from diffusion of carrier heating, and that its order is enhanced from 1010 - 1012 s-1 with the variation of the magnetized frequency from 1 to 2.5 × 1014 Hz.

Analysis on FM-to-AM conversion of SSD beam induced by etalon effect in a high-power laser system

FM-to-AM(frequency modulation-to-amplitude modulation)conversion caused by nonuniform spectral transmission of broadband beam is harmful to high-power laser facility.Smoothing by spectral dispersion(SSD)beam is a special broadband beam for its monochromatic feature at the given time and space on the near field.The traditional method which uses the optical spectral transfer function as filters cannot accurately describe its AM characteristics.This paper presents the theoretical analysis of the etalon effect for SSD beam.With a low-order approximation,the analytic model of the temporal shape of SSD beam is obtained for the first time,which gives the detailed AM characteristics at local and integral aspects,such as the variation of ripples width and amplitude in general situation.We also analyze the FM-to-AM conversion on the focal plane;in the focusing process,the lens simply acts as an integrator to smooth the AM of SSD beam.Because AM control is necessary for the near field to avoid optics damage and for the far field to ensure an optimal interaction of laser-target,our investigations could provide some important phenomena and rules for pulse shape control.

Evolution of low-frequency noise passing through a spatial filter in a high power laser system

The theoretical model of spatial noise passing through a spatial filter is established in high power laser system under the small signal approximation. The transmission characteristic for a noise signal passing through spatial filters with different magnifications is analyzed by numerical simulation, according to the actual structure of the high power laser system. The results show that the spatial modulation period of low-frequency noise getting through the pinhole will be proportional to the magnification of the spatial filter. When the magnification is less than 1, the safe low-frequency noise will be extruded into the high-frequency region, which is the fast increasing part, and finally develops into the most dangerous part which can damage the optical devices. The conclusion of this research improves the relay imaging theory of a spatial filter and provides an important theoretical basis for a general design of high power laser systems.

利用非线性损耗提升全固态单频激光器输出功率研究进展(特邀)

全固态单频连续波激光器因其噪声低、线宽窄、光束质量好、功率稳定性高等优点已经被广泛应用于产生非经典光场、冷原子物理研究、引力波探测等诸多领域。随着科学技术的不断发展,传统的全固态激光器的输出功率已经不能满足前沿领域的需求,因此亟需在保持全固态激光器整体性能的同时进一步提升激光器的输出功率。为此首先需要更高的泵浦功率,而这将使激光器内部增益提高,在腔内损耗不变的情况下,原非振荡模式也将满足起振条件,从而使激光器在跳模或多模状态下运转。此外,激光晶体的热效应和损伤阈值也限制了输出功率的提高。本文介绍了一种利用非线性损耗大幅度提升全固态单频连续波激光器的输出功率的技术和方法。通过在谐振腔中引入非线性损耗,使主模经受的非线性损耗是次模的一半。在模式竞争的作用下,谐振腔内的模式被更进一步的选择,从而允许全固态单频激光器在更高的增益下保持单纵模运转。通过在谐振腔内插入多块增益晶体可以有效缓解由于激光增益晶体热效应的限制,从而实现更高功率的单频激光输出。目前高功率全固态连续波激光器的输出功率已经达到了一百瓦的量级,且还在进一步提高。通过在谐振腔内引入非线性损耗,全固态单频连续波激光器的整体性能在得以保障和提高的同时,其应用范围也得到了进一步的推广。

大功率永磁变频一体机在煤矿的应用

随着煤矿装备技术的发展,大功率变频一体机有效解决了永磁电机的退磁问题,通过优化高压电机变频软启动控制技术,相对传统驱动方式减少了对机械部件的冲击,既承袭了变频驱动的技术优势,又解决了分体式变频器驱动对电网的污染和长距离供电对变频器的影响。

1000MW超超临界汽轮机组中低负荷节能研究

为解决中低负荷工况下的高耗能问题,某电厂进行了广义变频改造,并选取改造后的THA、75%THA和50%THA等3个典型工况进行了节能效果测试与研究。结果显示,在高负荷工况下,广义变频的节能效果并不显著;而在中低负荷工况下,广义变频的节能效果随着负荷的降低而增加。该研究表明,通过广义变频改造能够有效降低中低负荷工况下的能耗,同时该研究为AGC调频技术在深化节能改造方面的应用探索了道路。

两个可调节传输零点的双频高效率功率放大器设计

为了解决矿井下多频无线终端中双频功率放大器极易干扰其他终端的难题,提出具有两个可调节传输零点的双频高效率功率放大器设计方法.该双频阻抗变换电路由解析的计算方式获得全部设计参数,同时可通过调节两个自由变量将全部的传输线特性阻抗参数调整到合适范围,另外还将二次谐波控制电路和两个传输零点产生电路融合到双频基波阻抗变换电路中.仿真结果表明,在0.7 GHz和2.6 GHz的最大功率附加效率为81.0%和71.5%;当输入功率分别为25.5 dBm和29.5 dBm时,在0.9 GHz和2.1 GHz两个频率相应的输出功率分别为-0.9dBm和-22.9dBm,从而验证了本文设计方法的有效性.

开关型脉冲激光电源系统的设计与实现

本文探究了开关型脉冲激光电源系统的设计方案,并通过MTALAB仿真验证其功能的实现情况。根据脉冲氙灯的特性以及脉冲激光电源的工作原理,设计了基于串联谐振型半桥变换器的电能变换主电路,保证电源电压噪声小、稳定性好;同时,使用高频高压变压器降低电磁干扰、提高转换效率。在完成系统设计后,使用MATLAB仿真软件构建系统模型并验证其功能。结果表明,该系统的软启动功能、自保护功能以及缓上电功能可以正常实现,符合设计预期。

火力发电厂输煤皮带机顺煤流启动节能技术研究

为改进火力发电厂输煤皮带机的启动节能技术,缩短空载时间并提高节能效率,本次提出火力发电厂输煤皮带机顺煤流启动节能技术研究。根据皮带机顺煤流启动特性对节能总体设计,采用激光扫描仪测量皮带机运量和变频技术对皮带机顺煤流带速调节,最后限制皮带机顺煤流启动加速度。经实验证明:应用设计技术,皮带机顺煤流启动空载时间得到了有效缩短,节能效率得到有效提升。

基于高频开关电源的通信设备整流模块设计与性能优化

文章基于高频开关电源的通信设备整流模块设计与性能优化展开研究,旨在提出一种高效稳定的电源解决方案。设计直流/直流(Direct Current/Direct Current,DC/DC)变换电路,实现对直流电压的变换和稳定输出,并设计多种监控电路,包括配电监控电路、绝缘监控电路、主监控电路,以全面监测和管理整流模块的工作状态,保障系统的安全稳定运行。通过优化调整脉冲宽度调制(Pulse Width Modulation,PWM)频率和占空比,确定最佳参数配置,获得稳定且低纹波的输出电压。这些研究成果为通信设备提供一种可靠的电源解决方案,具有重要的实际应用价值。

激光-感应复合加热制备纳米Al粉的工艺研究

采用激光 感应复合加热蒸发法 ,在不同的激光功率下制备了纳米Al粉。对激光功率与粉末产率和粉末粒度之间的关系进行了讨论。

神光III强激光能源模块测量线圈研究

神光III 能源模块作为一种大功率强激光功率源,采 用合适传感头准确可靠测量其脉冲电流,有利于提高能量 传输的可靠性和准确性。该文分析了置于该能源模块中高 压侧测量不同脉冲宽度电流的Rogowski 测量线圈的数学模 型、时域和频域特性,以及最佳阻尼参数配合和优选方法, 并对基于MATLAB 环境下SIMULINK 工具所做的仿真结 果和现场实验测试采集到的脉冲电流波形进行了比较。为 有效抑制积分漂移,该文提出了复合积分器电路模型。该 文章介绍的基于Rogowski 线圈的测量仪器具有尺寸小、结 构简单、低功耗、高准确度、安全操作等特点。

智能电网中的新一代高频隔离功率转换技术

随着智能电网的发展,主要由变压器和开关构成的传统配电网结构将会改变,功率转换系统将作为更为核心的角色并实现更为系统性的功能。首先论述智能电网中功率转换技术的研究意义;在此基础上,对传统功率转换技术的局限性以及新一代高频隔离功率转换技术的概念和发展特点进行全面阐述。其次,从系统层面介绍国内外关于高频隔离功率转换技术的典型研究项目,从变换器层面介绍关键技术的研究进展。在此基础上,从技术层面提炼出现阶段高频隔离功率转换技术研究中需解决的关键问题。同时,以高频隔离固态变压器为典型案例,讨论新一代高频隔离功率转换技术在智能电网中的应用方案。最后,结合中国的研究现状,给出发展建议。

激光雷达用高性能光纤激光器

系统研究了窄线宽低噪声单频连续光纤激光器、高能量纳秒长脉冲单频光纤激光器以及高峰值功率纳秒短脉冲光纤激光器三类高性能光纤激光器:实现了工作于1、1.5及2μm波段的单频连续光纤激光器,典型光谱线宽小于3 k Hz,强度噪声接近于散粒噪声极限;实现了高能量单频光纤激光器,脉冲能量超过200μJ,重复频率20 k Hz,脉冲宽度100~500 ns,激光波长位于1.5μm波段;实现了高峰值功率纳秒短脉冲光纤激光器,峰值功率超过700 k W,重复频率10 k Hz,脉冲宽度3 ns;同时还实现了高重频高峰值功率纳秒短脉冲光纤激光器,峰值功率超过200 W,重复频率3 MHz,脉冲宽度1~5 ns。文中阐述了以上几类高性能光纤激光器在激光雷达探测系统中的应用前景。

双腔准分子激光器脉冲充电电源的研究

为了满足工业用振荡-放大双腔结构的准分子激光器放电激励技术的要求,设计了高重频高精度的脉冲充电电源。该电源采用LC谐振倍压的方式,同时为双腔准分子激光器的充电电容器进行充电,倍压比为1.87。通过对电源工作时序的调节,实现千赫兹高重频放电激励,在电源输出电压约为1300V时,充电电压精度为±0.18%。结果表明,通过充电电压精度控制单元,对充电电压反馈调节,可以实现充电电压的高精度。

基于阻抗变换的稳频高效非接触电能传输系统

为提高非接触电能传输系统在变负载工作模式下的频率稳定性和效率,提出了基于阻抗变换的稳频高效非接触电能传输系统设计方法.根据开关变换器可实现阻抗变换,在非接触电能传输系统副边结构中加入开关变换器,通过控制开关变换器中开关管占空比进行负载电阻的等效变换,并优化设计系统谐振补偿参数;通过对系统谐振网络以及阻抗变换电路的分析,推导出了系统关键参数设计的计算公式及阻抗变换电路占空比与负载电阻之间的函数关系.研究结果表明:当负载电阻在1～10Ω范围内变化时,通过实时调节开关管占空比,能够始终保证系统效率达到67.0%.

200kV高压开关电源研制

采用软开关电源技术和叠层式倍压器方法,研制成一台200 kV高压发生器,介绍了其工作原理和结构。高压开关电源主要由功率变换器、中频升压变压器和高压倍压器组成。其主要技术指标为:高压200kV,输出电流10 mA,工作频率20 kHz,电压稳定度1%,纹波系数2%,连续工作时间为8 h。测试结果表明,该高压开关电源的性能指标达了设计要求。