Algebraic processing technique for extracting frequency-dependent shear-wave splitting parameters in an anisotropic medium

Based on the dual source cumulative rotation technique in the time-domain proposed by Zeng and MacBeth（1993）,a new algebraic processing technique for extracting shear-wave splitting parameters from multi-component VSP data in frequency-dependent medium has been developed.By using this dual source cumulative rotation technique in the frequency-domain（DCTF）,anisotropic parameters,including polarization direction of the shear-waves and timedelay between the fast and slow shear-waves,can be estimated for each frequency component in the frequency domain.It avoids the possible error which comes from using a narrow-band filter in the current commonly used method.By using synthetic seismograms,the feasibility and validity of the technique was tested and a comparison with the currently used method was also given.The results demonstrate that the shear-wave splitting parameters frequency dependence can be extracted directly from four-component seismic data using the DCTF.In the presence of larger scale fractures,substantial frequency dependence would be found in the seismic frequency range,which implies that dispersion would occur at seismic frequencies.Our study shows that shear-wave anisotropy decreases as frequency increases.

Modeling the efects of fracture infll on frequency‑dependent anisotropy and AVO response of a fractured porous layer

In a fractured porous hydrocarbon reservoir,wave velocities and refections depend on frequency and incident angle.A proper description of the frequency dependence of amplitude variations with ofset(AVO)signatures should allow efects of fracture inflls and attenuation and dispersion of fractured media.The novelty of this study lies in the introduction of an improved approach for the investigation of incident-angle and frequency variations-associated refection responses.The improved AVO modeling method,using a frequency-domain propagator matrix method,is feasible to accurately consider velocity dispersion predicted from frequency-dependent elasticities from a rock physics modeling.And hence,the method is suitable for use in the case of an anisotropic medium with aligned fractures.Additionally,the proposed modeling approach allows the combined contributions of layer thickness,interbedded structure,impedance contrast and interferences to frequency-dependent refection coefcients and,hence,yielding seismograms of a layered model with a dispersive and attenuative reservoir.Our numerical results show bulk modulus of fracture fuid signifcantly afects anisotropic attenuation,hence causing frequencydependent refection abnormalities.These implications indicate the study of amplitude versus angle and frequency(AVAF)variations provides insights for better interpretation of refection anomalies and hydrocarbon identifcation in a layered reservoir with vertical transverse isotropy(VTI)dispersive media.

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs （high electronic mobility transistors） EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance-voltage measurement. Using capacitance-frequency measurement, it finds one type of trap in conventional DHEMTs with TT = （0.5 - 6） ms and DT ： （1 - 5）×10^13 cm^-2. eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with TW（f）= （0.2 - 2） μs and slow with TT（s） = （0.5 - 6） ms. The density of trap states evaluated on the EHEMTs is Dw（f） ： （1 - 3） × 10^12 cm^-2. eV^-1 and DT（s） =（2 - 6） × 10^12 cm-2. eV-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.

A GENERAL FREQUENCY DEPENDENT DIGITAL OPTIMAL PREVIEW SERVO SYSTEM

In this paper,we present a design method for a kind of general frequency dependent digital optimal preview servo svstem which is effective to improve frequency characteristics of closed looP system.By the method,for any rational expression frequency dependent weight which loads on error vector,we can design an optimal preview servo system.The result is applied to an air slide linear motor in simulation and its effectivity is proved.

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

The perylene （C20H12） layer effect on the electrical and dielectric properties of Al/p-Si （MS） and Al/perylene/p-Si （MPS） diodes have been investigated and compared in the frequency range of 0.7 kHz-2 MHz. Experimental results show that C-V characteristics give an anomalous peak for two structures at low frequencies due to interface states （Nss） and series resistance （Rs）. The increases in C and G/o3 at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant （er） and dielectric loss （e＇） are subtracted using C and G/co data at 1.5 V. The eI and e＂ values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln（o＇ac）-ln（w） for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C 2-V characteristics, the doping acceptor atom concentration （NA） and barrier height （,~） for Schottky barrier diodes （SBDs） 1.303 ~ 1015 cm-3, and 1.10 and I. 13 eV, respectively. of MS and MPS types are also obtained to be 1.484 ~ 1015

Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition（ALD） for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state（Nss）, barrier height（Φb）, series resistance（Rs）, donor concentration（Nd）, and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current（DC） bias voltages in a range from-2 V to ＋2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant（ε＂）, dielectric loss（ε＂）, loss tangent（tan δ）, the real and imaginary parts of electric modulus（M and M）, and alternating current（AC） electrical conductivity（σ） are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.

Sensitivity of seismic attenuation and dispersion to dynamic elastic interactions of connected fractures: Quasi-static finite element modeling study

Prediction of seismic attenuation and dispersion that are inherently sensitive to hydraulic and elastic properties of the medium of interest in the presence of mesoscopic fractures and pores,is of great interest in the characterization of fractured formations.This has been very difficult,however,considering that stress interactions between fractures and pores,related to their spatial distributions,tend to play a crucial role on affecting overall dynamic elastic properties that are largely unexplored.We thus choose to quantitatively investigate frequency-dependent P-wave characteristics in fractured porous rocks at the scale of a representative sample using a numerical scale-up procedure via performing finite element modelling.Based on 2-D numerical quasi-static experiments,effects of fracture and fluid properties on energy dissipation in response to wave-induced fluid flow at the mesoscopic scale are quantified via solving Biot's equations of consolidation.We show that numerical results are sensitive to some key characteristics of probed synthetic rocks containing unconnected and connected fractures,demonstrating that connectivity,aperture and inclination of fractures as well as fracture infills exhibit strong impacts on the two manifestations of WIFF mechanisms in the connected scenario,and on resulting total wave attenuation and phase velocity.This,in turn,illustrates the importance of these two WIFF mechanisms in fractured rocks and thus,a deeper understanding of them may eventually allow for a better characterization of fracture systems using seismic methods.Moreover,this presented work combines rock physics predictions with seismic numerical simulations in frequency domain to illustrate the sensitivity of seismic signatures on the monitoring of an idealized geologic CO_(2) sequestration in fractured reservoirs.The simulation demonstrates that these two WIFF mechanisms can strongly modify seismic records and hence,indicating that incorporating the two energy dissipation mechanisms in the geophysical interpretation can potentially improving the monitoring and surveying of fluid variations in fractured formations.

A two-step multi-frequency receiver function inversion method for shallow crustal S-wave velocity structure and its application across the basin-mountain range belts in Northeast China

A shallow crustal velocity structure(above 10 km depth) is essential for understanding the crustal structures and deformation and assessing the exploration prospect of natural resources, and also provides priori information for imaging deeper crustal and mantle structure. Passive-source seismic methods are cost-effective and advantageous for regional-scale imaging of shallow crustal structures compared to active-source methods. Among these passive methods, techniques utilizing receiver function waveforms and/or body-wave amplitude ratios have recently gained prominence due to their relatively high spatial resolution. However, in basin regions, reverberations caused by near-surface unconsolidated sedimentary layers often introduce strong non-uniqueness and uncertainty, limiting the applicability of such methods. To address these challenges, we propose a two-step inversion method that uses multi-frequency P-RF waveforms and P-RF horizontal-to-vertical amplitude ratios. Synthetic tests indicate that our two-step inversion method can mitigate the non-uniqueness of the inversion and enhance the stability of the results. Applying this method to teleseismic data from a linear seismic array across the sedimentary basins in Northeast China, we obtain a high-resolution image of the shallow crustal S-wave velocity structure along the array. Our results reveal significant differences between the basins and mountains. The identification of low-velocity anomalies(<2.8 km s^(-1)) at depths less than 1.0 km beneath the Erlian Basin and less than 2.5 km beneath the Songliao Basin suggests the existence of sedimentary layers. Moreover, the high-velocity anomalies(~3.4–3.8 km s^(-1)) occurring at depths greater than 7 km in the Songliao Basin may reflect mafic intrusions emplaced during the Early Cretaceous. Velocity anomaly distribution in our imaging result is consistent with the location of the major faults, uplifts, and sedimentary depressions, as well as active-source seismic results. This application further validates the effectiveness of our method in constraining the depth-dependent characteristics of the S-wave velocity in basins with unconsolidated sedimentary cover.

Tomographic inversion of near-surface Q factor by combining surface and cross-hole seismic surveys

The estimation of the quality factor Q plays a fundamental role in enhancing seismic resolution via absorption compensation in the near-surface layer.We present a new geometry that can be used to acquire field data by combining surface and cross-hole surveys to decrease the effect of geophone coupling on Q estimation.In this study,we drilled number of receiver holes around the source hole,each hole has different depth and each geophone is placed geophones into the bottom of each receiver hole to avoid the effect of geophone coupling with the borehole wall on Q estimation in conventional cross-hole seismic surveys.We also propose a novel tomographic inversion of the Q factor without the effect of the source signature,and examine its stability and reliability using synthetic data.We estimate the Q factors of the near-surface layer in two different frequency bands using field data acquired in the Dagang Oilfield.The results show that seismic absorption in the nearsurface layer is much greater than that in the subsurface strata.Thus,it is of critical practical importance to enhance the seismic solution by compensating for near-surface absorption.In addition,we derive different Q factors from two frequency bands,which can be treated,to some extent,as evidence of a frequency-dependent Q.

Statistical characteristics of ionospheric backscatter observed by SuperDARN Zhongshan radar in Antarctica

Zhongshan HF radar, as one component of SuperDARN, has been established and in operation since April, 2010. Using data from the first two years of its operation, this paper investigates the radar＇s performance, the diurnal and seasonal variations o1 ionospheric echoes, and their dependence on geomagnetic activity. Statistical studies show that the occurrence of echoes in different beams varies at different frequencies, which arises from the direction of the beam and the area over which the beam can achieve the orthogonality condition between the wave vector and the Earth＇s magnetic field. The diurnal variation is obvious with double peak structures both in the occurrence rate and average power at 04-08 UT and 16-17 UT. The line-of-sight velocities are mainly positive on the dayside and negative on the nightside for Beam 0, which is the opposite of the trend for Beam 15. The spec- tral widths on the dayside are often higher than those on the nightside owing to the high energy particle precipitation in the cusp region. The seasonal variations are more obvious for those beams with larger numbers. The occurrence, the average power, the line-of-sight velocity, and the spectral widths are generally larger in the winter months than in the summer months. The influence of geomagnetic activity on radar echoes is significant. The peak echo occurrence appears on the dayside during geomagnetically quiet times, and shifts toward the nightside and exhibits an obvious decrease with increasing Kp. With increasing geomagnetic activity, the line-of-sight velocities increase, whereas the spectral widths decrease. The frequency dependence is investigated and it is found that in the operating frequency bands in 2010, 9-10 MHz is the most appropriate band for the SuperDARN Zhongshan radar.

Dielectric characteristics and nonlinear properties of ZnO-polypyrrole composites

The nonlinear properties and frequency characteristics of ZnO-polypyrrole composites were investigated at 200 Hz-5 MHz frequency interval with different zinc oxide contents. Samples were prepared using hot press method at 130 ℃. Results show an optimum point for breakdown voltage at ZnO content of 70%. Breakdown voltage decreases from 590 to 380 V and after that tends to increase from 450 to 740 V due to the absence of polypyrrole at grain boundaries. No matter how breakdown voltage behaves, nonlinear coefficient increases from 4.2 to 9 by increasing ZnO content because of the increase in acceptor-like states at grain boundaries by increasing ZnO content. The electrical parameters such as dielectric constant, dielectric loss and series resistance of samples show a strong dependence on frequency especially below 1 k Hz. These parameters fall off by increasing frequency up to 1 k Hz, which is related to charge transportation through the Schottky barrier at grain boundaries. The high dielectric constant of samples below 1 k Hz is related to the Maxwell-Wagner polarization at grain boundaries. The presence of different anomalies at different frequency intervals is related to interfacial polarization because of different structures of grains and intergranular layer with a huge difference in conductivity.

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

The frequency-dependent polarization switching in nanograined BaTiO_(3) films under high-strength electric field

The polarization reorientation in ferroelectric nanomaterials under high-strength AC electric fields is intrinsically a frequency-dependent process.However,the related study is not widely seen.We report a phase-field investigation regarding the dynamics of polarization switching and the electromechanical characteristics of a polycrystalline BaTiO_(3) nanofilm under applied frequency from 0.1 to 80 kHz.The grain boundaries and the in-plane strains are considered in the model.The obtained hysteresis and butterfly loops exhibit a remarkable variety of shapes with the changing frequency.The underlying mechanism for the observed frequency-dependent physical properties was discussed via domain structure-based analysis.In addition,we examined the influence of the kinetic coefficient in the Ginzburg-Landau equation as well as the influence of the electric-field amplitude to the frequency dependency.It was found that a higher value of kinetic coefficient or field amplitude tends to enhance the mobility of polarization switching and to transform high-frequency characteristics to low-frequency ones.

Attenuation of coda waves and Q_c value beneath the Chengdu telemetered seismic network

Based on the single scattering model of coda power spectrum analysis, digital waveform data of 50 events recorded by the real time processing system of the Chengdu telemetry network are analyzed to estimate the Q c values of earth medium beneath the Chengdu telemetry network for several specified frequencies. It is found that the Q c shows the frequency dependency in the form of Q c= Q 0 f n in the range of 1.0 to 20.0Hz. Estimated Q 0 ranges from 60.83 to 178.05, and n is found to be 0.713 to 1.159. The average value of Q 0 and n are 117 and 0.978 respectively. This result indicates the strong frequency dependency of the attenuation of coda waves beneath the Chengdu telemetry network. Comparing with the results obtained in other regions of the world, it is found that Q 0 1 value and its change with frequency are similar to those in regions with strong tectonic activity.

Noise temperature distribution of superconducting hot electron bolometer mixers

We report on the investigation of optimal bias region of a wide-band superconducting hot electron bolometer(HEB)mixer in terms of noise temperature performance for multi-pixel heterodyne receiver application in the 5-meter Dome A Terahertz Explorer(DATE5)telescope.By evaluating the double sideband(DSB)receiver noise temperature(Trec)across a wide frequency range from 0.2 THz to 1.34 THz and with a large number of bias points,a broad optimal bias region has been observed,illustrating a good bias applicability for multipixel application since the performance of the HEB mixer is uniquely determined by each bias point.The noise temperature of the HEB mixer has been analyzed by calibrating the noise contribution of all RF components,whose transmissions have been measured by a time-domain spectroscopy.The corrected noise temperature distribution shows a frequency independence relation.The dependence of the optimal bias region on the bath temperature of the HEB mixer has also been investigated,the bath temperature has limited effect on the lowest receiver noise temperature until 7 K,however the optimal bias region deteriorates obviously with increasing bath temperature.

A frequency and amplitude dependent model of rail pads for the dynamic analysis of train-track interaction

A frequency and amplitude dependent model is used to describe the complex behavior of rail pads. It is implemented into the dynamic analysis of three dimensional coupled vehicle-slab track （3D-CVST） systems. The vehicle is treated as a 35-degree- of-freedom multi-body system, and the slab track is represented by two continuous Bernoulli-Euler beams supported by a se- ries of elastic rectangle plates on a viscoelastic foundation. The rail pad model takes into account the influences of the excita- tion frequency and of the displacement amplitude through a fractional derivative element, and a nonlinear friction element, re- spectively. The Granwald representation of the fractional derivatives is employed to numerically solve the fractional and non- linear equations of motion of the 3D-CVST system by means of an explicit integration algorithm. A dynamic analysis of the 3D-CVST system exposed to excitations of rail harmonic irregularities is primarily carried out, which reveals the dependence of stiffness and damping on excitation frequency and displacement amplitude. Subsequently, sensitive analyses of the model parameters are investigated by conducting the dynamic analysis of the 3D-CVST system subjected to excitations of welded rail joint irregularities. Following this, parameters of the rail pad model are optimized with respect to experimental values. For elu- cidation, the 3D-CVST dynamic model incorporated with the rail pads model is used to calculate the wheel/rail forces induced by excitations of measured random track irregularities. Further, the numerical results are compared with experimental data, demonstrating the reliability of the proposed model.

Shear-wave velocity structures of the shallow crust beneath the Ordos and Sichuan Basins from multi-frequency direct P-wave amplitudes in receiver functions

As the two largest cratonic basins in China,the Ordos Basin and the Sichuan Basin are of key importance for understanding the evolutionary history of the Chinese continent.In this study,the shear-wave velocity(V_(S))structures of the shallow crust(depth up to 10 km)beneath the two basins are imaged based on the frequency-dependence of direct P-wave amplitudes in receiver functions.The teleseismic data used in the study came from 160 broadband seismic stations,including permanent and temporary stations.The results show that the V_(S) and the thickness of the sediments in the Ordos Basin and the Sichuan Basin are respectively lower and thicker in the west than in the east.In the Ordos Basin,the shallow crustal V_(S) increases gradually from 2.10 km s^(−1)in the northwest to 2.65 km s^(−1)in the southeast and the thickest sediments are 7–8 km in the northwest and 5 km in the east.In the Sichuan Basin,the shallow crustal V_(S) increases from 2.4 km s^(−1) in the west to 2.7 km s^(−1)in the east and the thickness of the sediments decreases from>7 km in the west to 6 km in the east.The east-west difference of the shallow crustal structures of the two basins may have been controlled by the Cenozoic India-Eurasia collision.The western parts of the basins near the collision have a higher deposition rate,while in the parts inside the basins far from the collision,the V_(S) slowly increases with depth,indicating that these areas have experienced a more uniform deposition process.In addition,both basins are characterized by velocity structures that are higher along the edges and lower inside of the basins.The edges of the basins suffered strong denudation due to the uplifting and deformation influenced by tectonic evolution.The downward gradient of the shear-wave velocity beneath the Ordos Basin is twice that of the Sichuan Basin,which may be caused by the different deposition and denudation rates of the two basins resulting from differences in structural evolution and thermal events.In addition,the northern Ordos Basin exhibits a strong structural horizontal stratification,while the southern part shows obvious lateral variations in the V_(S) structure,both of which may have been affected by the Qilian orogenic event,the collision and assembly of the South China and the North China block,and the lateral extrusion of the Tibetan Plateau.

On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique

The frequency dependent of the forward and reverse bias capacitance-voltage （C-V） and conductance-voltage （G/w-V） charac- teristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of-5 - 5 V at room temperature. The effects of surface states （Nss） and series resistance （R0 on C-V and G/w-V characteristics have been in- vestigated in detail. The frequency dependent Nss and Rs profiles were obtained for various applied bias voltages. The experi- mental results show that the main electrical parameters of Au/p-InP SBD such as barrier height （gOB）, the density of acceptor concentration （NA）, Nss and Rs were found strongly frequency and voltage dependent. The values of C and G/w decrease with increasing frequency due to a continuous distribution of Nss localized at the metal/semiconductor （M/S） interface. The effect of Rs on C and G is found considerably high especially at high frequencies. Therefore, the high frequencies of the values of C and G were corrected for the effect of Rs in the whole measured bias range to obtain the real diode capacitance Cc and conductance Gc using the Nicollian and Goetzberger technique. The distribution profile of Rs-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of Nss at the M/S interface.

An iterative approach for modal analysis of solid rocket motor incorporating frequency dependent modulus

The modulus of viscoelastic materials varies with excitation frequency.However,during modal analysis of frequency dependent materials,a material evaluation frequency is necessary because stiffness cannot be modified during eigenfrequency procedure.As a result,only those vibration modes are accurate,of which eigenfrequency is close to the material evaluation frequency.In order to obtain vibration modes of solid rocket motor(SRM) using material modulus based on frequency which is the same as the eigenfrequency,an iterative approach was proposed.Results of the iterative technique show that frequency modes obtained from the method are in complete agreement with the eigenfrequency and material evaluation frequency.

Analytical Frequency-Dependent Model for Transmission Lines on RF-CMOS Lossy Substrates

Transmission lines （T-Lines） are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor （CMOS） technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters （per unit length） obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.