In situ frequency gating and beam splitting of vacuum- and extreme-ultraviolet pulses

Monochromatization of high-harmonic sources has opened fascinating perspectives regarding time-resolved photoemission from all phases of matter.Such studies have invariably involved the use of spectral filters or spectrally dispersive optical components that are inherently lossy and technically complex.Here we present a new technique for the spectral selection of near-threshold harmonics and their spatial separation from the driving beams without any optical elements.We discover the existence of a narrow phase-matching gate resulting from the combination of the non-collinear generation geometry in an extended medium,atomic resonances and absorption.Our technique offers a filter contrast of up to 104 for the selected harmonics against the adjacent ones and offers multiple temporally synchronized beamlets in a single unified scheme.We demonstrate the selective generation of 133,80 or 56 nm femtosecond pulses from a 400-nm driver,which is specific to the target gas.These results open new pathways towards phase-sensitive multi-pulse spectroscopy in the vacuum-and extreme-ultraviolet,and frequencyselective output coupling from enhancement cavities.

Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications

We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate（TM） GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.

Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry

In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel fieldeffect transistor（TFET） has been made using distinct device geometry. Firstly, performance parameters of GAATFET are analyzed in terms of drain current, gate capacitances, transconductance, source-drain conductance at different radii and channel length. Furthermore, we also produce the geometrical analysis towards the optimized investigation of radio frequency parameters like cut-off frequency, maximum oscillation frequency and gain bandwidth product using a 3D technology computer-aided design ATLAS. Due to band-to-band tunneling based current mechanism unlike MOSFET, gate-bias dependence values as primary parameters of TFET differ. We also analyze that the maximum current occurs when radii of Si is around 8 nm due to high gate controllability over channel with reduced fringing effects and also there is no change in the current of TFET on varying its length from 100 to 40 nm.However current starts to increase when channel length is further reduced for 40 to 30 nm. Both of these trades-offs affect the RF performance of the device.

Performance analysis of InSb based QWFET for ultra high speed applications

An indium antimonide based QWFET（quantum well field effect transistor） with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors（ITRS）requirements of drive current（Semiconductor Industry Association 2010）. The performance of the device is investigated using the SYNOPSYS CAD（TCAD） software. In Sb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation.

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

In this paper,RF performance analysis of In As-based double gate（DG）tunnel field effect transistors（TFETs）is investigated in both qualitative and quantitative fashion.This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters,unity gain cut-off frequency（f_t）,maximum oscillation frequency（f_（max））,intrinsic gain and admittance（Y）parameters.An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs.Higher ON-current（ION）of about 0.2 mA and less leakage current（IOFF）of 29 f A is achieved for DG TFET with gate-drain overlap.Due to increase in transconductance（g_m）,higher ft and intrinsic gain is attained for DG TFET with gate-drain overlap.Higher f_（max） of 985 GHz is obtained for drain doping of 5×10^（17）cm^（-3） because of the reduced gate-drain capacitance（C_（gd））with DG TFET with gate-drain overlap.In terms of Y-parameters,gate oxide thickness variation offers better performance due to the reduced values of Cgd.A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters.The simulation results are compared with this numerical model where the predicted values match with the simulated values.