Performance analysis of the tight combination of GPS, BDS, GALILEO, and QzsS mixed frequencies signals

With the gradual development and modernization of satellite navigation systems,using observation information from multi-GNss has become one of the hot-spot issues in recent years.Multi-system loose combinations form double-difference observation equations within their respective systems,and the positioning effect is improved.However,the interchangeability and compatible interoperability between global navigation satellite systems(GNSS)cannot be truly realized.At the same time,when the number of visible satellites decreases abruptly,the positioning performance deteriorates sharply.This paper focuses on the GNsS multi-system tight combination relative positioning technique,gives a mathe-matical model of multi-system tight combination relative positioning considering differential inter-system bias(DISB),and analyzes the time-varying characteristics of DISB at overlapping and non-overlapping frequencies among GPS/Galileo,GPS/BDS,and GPS/QZSS in terms of receiver brand,tem-perature,and receiver restart.The GNsS tight combination relative positioning performance is verified by static data from Curtin University and dynamic data measured at Taiyuan University of Technology.The results show that compared with loose combination,the ambiguity-fixed rate increases from 62.18%to 97.60%for static data and from 74.97%to 99.53%for dynamic data when the elevation mask angle is 50°,resulting in a significant improvement in positioning performance.

Improvement of the Mirror Extending in Empirical Mode Decomposition Method and the Technology for Eliminating Frequency Mixing

The mirror extending approach proposed by Zhao and Huang in EMD method is improved in this paper. Mirror extending manner of data is kept unchanged, but the approach for determining envelopes is changed. When the end of data is obviously not extremum, the envelope is determined by the first inner extremum and the image value in the mirror, ignoring the value on the end. This improvement eliminates the frequency compression near the end and decreases the error. Meanwhile, tridiagonal equations are used and the calculation speed is much increased. The temporal process curve is more important in reflecting the real physical process and comparable with other phenomena. Frequency mixing in IMFs makes it impossible. A high frequency reconstruction (HFR) approach is proposed to eliminate common frequency mixing and reconstruct an IMF with all high frequency portions. By this approach, the IMFs without frequency mixing are obtained to express significative processes. The high frequency information restored in high frequency IMF can be extracted by general spectrum method. After obtaining IMFs by EMD method, some of the theoretical and technological issues still exist when using the IMFs. The consistency of IMFs with real physical process is discussed in detail. By virtue of the approach proposed in this paper, the EMD method can be widely used in various fields.

Frequency measurement technique based on frequency conversion

To measure the signals with high freq u ency(>500 MHz),a sampling frequency down conversion method is introduced.This pa per analyzes the intermodulation signals and figures out the relationship betwee n the intermodulation signal and intermediate frequenc y signal.Based on the frequency conversion technology,an exclusion algorithm i s proposed a nd the actual implementation of the algorithm is given.The application resu lts show that the exclusion algorithm can identify the intermodulation signal exactly and eliminate the bad influence on the frequency measurement.

3D heterogeneous integration of wideband RF chips using silicon-based adapter board technology

An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board technology.Four layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding process.Each layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon substrate.The interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field simulation.According to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 mm.The multiplier multi-function chip operates at 16-20 GHz.The fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 mm.The cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.

Performance and Effectiveness of UniFET^TM II MOSFET in HID Lamp Ballast

An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.

Generation of 160 nm vacuum ultraviolet light at 82 MHz in a KBBF crystal by the fifth-harmonic of a Ti:sapphire laser

We report the generation of quasi-cw vacuum ultraviolet(VUV)light at 160 nm with a repetition rate of 82 MHz by two second-harmonic generations and one sum frequency mixing.The VUV laser light is produced as a fifth-harmonic generation of a mode-locked ps Ti:sapphire laser system by successive stages with nonlinear crystals of LBO and KBBF.A stable generation of laser light at 200 nm for more than 6 h is the most important step for obtaining the generation of light at a wavelength of 160 nm.