Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate （LiB3O5 or LBO） crystals using the electron beam evaporation method. Comparing with th...Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate （LiB3O5 or LBO） crystals using the electron beam evaporation method. Comparing with the sample without buffer layer, it is found that the adhesion of the sample with buffer layer of SiO2 between coating and LBO substrate is improved significantly from 137.4 mN to greater than 200 mN. And the laser-induced damage threshold is increased by 20% from 15.1 J/cm^2 to 18.6 J/cm^2. The strengthening mechanism of adhesion of the buffer layer of SiO2 is discussed by considering full plastic indentation and shear theory.展开更多
We report the compact diode-pumped continuous-wave （CW） Nd：LuV04 lasers operated at 916nm and 458nm for the first time. The maximum output power of 780mW at 916nm laser is obtained with a slope efficiency of 9.3%. ...We report the compact diode-pumped continuous-wave （CW） Nd：LuV04 lasers operated at 916nm and 458nm for the first time. The maximum output power of 780mW at 916nm laser is obtained with a slope efficiency of 9.3%. We generate 50roW of 458nm blue laser employing a type-Ⅰ critical phase-matched LBO crystal.展开更多
基金Fundeded by the Doctorial Start-up Fund of the Department of Science and Technology of Liaoning Province(20081030)S&T Plan Project of the Educational Department of Liaoning Province(2008224)
文摘Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate （LiB3O5 or LBO） crystals using the electron beam evaporation method. Comparing with the sample without buffer layer, it is found that the adhesion of the sample with buffer layer of SiO2 between coating and LBO substrate is improved significantly from 137.4 mN to greater than 200 mN. And the laser-induced damage threshold is increased by 20% from 15.1 J/cm^2 to 18.6 J/cm^2. The strengthening mechanism of adhesion of the buffer layer of SiO2 is discussed by considering full plastic indentation and shear theory.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60308001 and 60490280-1, the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No KJXC-SW-W14, the National Natural Science Foundation of China under Grant Nos 50572054 and 50590401, the Natural Science Foundation of Shandong Province under Grant No Y2004F01, and the National Basic Research Program of China under Grant No 2004CB619002.
文摘We report the compact diode-pumped continuous-wave （CW） Nd：LuV04 lasers operated at 916nm and 458nm for the first time. The maximum output power of 780mW at 916nm laser is obtained with a slope efficiency of 9.3%. We generate 50roW of 458nm blue laser employing a type-Ⅰ critical phase-matched LBO crystal.
